Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces

MLA

Shao Bo Dun, et al. “Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces.” Advanced Materials Research, vol. 338, Sept. 2011, pp. 530–33. EBSCOhost, https://doi.org/10.4028/www.scientific.net/amr.338.530.

APA

Shao Bo Dun, Qing Bin Liu, Jia Li, Jingjing Wang, & Zhi Hong Feng. (2011). Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces. Advanced Materials Research, 338, 530–533. https://doi.org/10.4028/www.scientific.net/amr.338.530

Chicago

Shao Bo Dun, Qing Bin Liu, Jia Li, Jingjing Wang, and Zhi Hong Feng. 2011. “Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces.” Advanced Materials Research 338 (September): 530–33. doi:10.4028/www.scientific.net/amr.338.530.