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High PAE high reliability AlN/GaN double heterostructure

Authors :
Malek Zegaoui
Farid Medjdoub
Astrid Linge
Riccardo Silvestri
Gaudenzio Meneghesso
B. Grimbert
Enrico Zanoni
Matteo Meneghini
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Università degli Studi di Padova = University of Padua (Unipd)
Source :
Solid-State Electronics, Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩, Solid-State Electronics, Elsevier, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
Publication Year :
2015

Abstract

International audience; We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.

Details

Language :
English
ISSN :
00381101
Database :
OpenAIRE
Journal :
Solid-State Electronics, Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩, Solid-State Electronics, Elsevier, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
Accession number :
edsair.doi.dedup.....01a017cf6192b66dfa70c609cf9c2775
Full Text :
https://doi.org/10.1016/j.sse.2015.05.009⟩