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155. Optical Polarization Properties of Wurtzite InP and InAs/InP Nanowires Grown on Silicon(111)

Author

Chauvin, Nicolas, Jaffal, Ali, MAVEL, Amaury, Regreny, Philippe, Patriarche, G., GENDRY, Michel, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

13-15 Novembre 2017,; International audience; no abstract

Published
2017

156. Optical Investigation of the Band Structure in Wurtzite InP Nanowires

Author

Chauvin, Nicolas, Mavel, Amaury, Patriarche, G., Masenelli, Bruno, Machon, D., Gendry, Michel, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Hétéroepitaxie et Nanostructures ( INL - H&N ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Institut Lumière Matière [Villeurbanne] ( ILM ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Inl, Laboratoire INL UMR5270

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS ] Physics [physics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.MAT ] Engineering Sciences [physics]/Materials, [SPI.MAT] Engineering Sciences [physics]/Materials, [PHYS] Physics [physics], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; no abstract

Published
2017

157. Nanoscale investigation of radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111)

Author

PIAZZA, V., VETTORI, Marco, Ahmed, A., Chauvin, Nicolas, Regreny, Philippe, Patriarche, G., Fave, Alain, GENDRY, Michel, Tchernycheva, M., Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Photovoltaïque (INL - PV), INL - Spectroscopies et Nanomatériaux (INL - S&N), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; no abstract

Published
2017

158. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Author

El Gmili, Y., Bonanno, P., Sundaram, S., Li, Xiaojian, Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P., Salvestrini, Jean-Paul, Ougazzaden, A., Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

159. Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths.

Author

Anufriev, R., Chauvin, N., Khmissi, H., Naji, K., Barakat, J.-B., Penuelas, J., Patriarche, G., Gendry, M., and Bru-Chevallier, C.

Subjects
NANOWIRE crystallography, NANOWIRES spectra, OPTICAL properties of indium phosphide, NANOSTRUCTURED materials, WAVELENGTHS
Abstract

The absorption and emission polarization properties of InAs quantum rods embedded in InP nanowires (NWs) are investigated by mean of (micro-)photoluminescence spectroscopy. It is shown that the degree of linear polarization of emission (0.94) and absorption (0.5) of a single NW can be explained by the photonic nature of the NW structure. Knowing these parameters, optical properties of single NWs and ordered ensembles of these NWs can be correlated one to another via proposed model, so that polarization properties of NWs can be studied using ordered ensembles on as-grown samples. As an example, the polarization anisotropy is investigated as a function of the excitation wavelength on a NW ensemble and found to be in agreement with theoretical prediction. [ABSTRACT FROM AUTHOR]

Published
2013
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163. Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Author

Demonchaux, T., primary, Sossoe, K. K., additional, Dzagli, M. M., additional, Nys, J. P., additional, Berthe, M., additional, Troadec, D., additional, Addad, A., additional, Veillerot, M., additional, Patriarche, G., additional, von Bardeleben, H. J., additional, Schnedler, M., additional, Coinon, C., additional, Lefebvre, I., additional, Mohou, M. A., additional, Stiévenard, D., additional, Lampin, J. F., additional, Ebert, Ph., additional, Wallart, X., additional, and Grandidier, B., additional

Published
2018
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165. Universal description of III-V/Si epitaxial growth processes

Author

Lucci, I., primary, Charbonnier, S., additional, Pedesseau, L., additional, Vallet, M., additional, Cerutti, L., additional, Rodriguez, J.-B., additional, Tournié, E., additional, Bernard, R., additional, Létoublon, A., additional, Bertru, N., additional, Le Corre, A., additional, Rennesson, S., additional, Semond, F., additional, Patriarche, G., additional, Largeau, L., additional, Turban, P., additional, Ponchet, A., additional, and Cornet, C., additional

Published
2018
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166. Quantum cascade lasers grown on silicon

Author

Baranov, A.N., primary, Nguyen-Van, H., additional, Loghmari, Z., additional, Cerutti, L., additional, Rodriguez, J.B., additional, Tournet, J., additional, Narcy, G., additional, Boissier, G., additional, Patriarche, G., additional, Tournie, E., additional, and Teissier, R., additional

Published
2018
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169. High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities.

Author

Kuszelewicz, R., Benoit, J.-M., Barbay, S., Lemaı⁁tre, A., Patriarche, G., Meunier, K., Tierno, A., and Ackemann, T.

Subjects
ELECTRONIC systems, OPTICAL properties, QUANTUM electronics, INDIUM aluminum arsenide, OPTICAL properties of gallium aluminum arsenide
Abstract

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10-8-2.1011 cm-3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers. [ABSTRACT FROM AUTHOR]

Published
2012
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171. Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy.

Author

Li, L. H., Patriarche, G., Linfield, E. H., Khanna, S. P., and Davies, A. G.

Subjects
*QUANTUM dots, *ELECTRONICS, *OPTOELECTRONICS, *POLARIZATION (Electricity), *TEMPERATURE
Abstract

We investigate the effect of the arsenic source (As2 and As4) on the optical properties of InGaAs quantum rods (QRs) grown by molecular beam epitaxy. Owing to differences in the In and Ga diffusion lengths under As2 and As4 fluxes, photoluminescence (PL) peak energies of the QR samples depend strongly on the As source when similar growth conditions are used. A marked improvement in the PL intensities from QR samples grown using As4 is achieved. However, for both As2 and As4, an increase of the As overpressure results in a PL intensity degradation, probably due to the formation of nonradiative recombination centers. [ABSTRACT FROM AUTHOR]

Published
2010
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172. Structure of annealed nanoindentations in n- and p-doped (001)GaAs.

Author

Le Bourhis, E. and Patriarche, G.

Subjects
*CRYSTALLOGRAPHY, *ANISOTROPY, *TRANSMISSION electron microscopy, *PARTICLES (Nuclear physics), *SEMICONDUCTOR doping, *DIFFUSION
Abstract

We have studied the structure of annealed nanoindentations realized at room temperature (RT) on (001) GaAs having either n or p doping under a large range of loads Fm (between 0.5 and 50 mN). Transmission electron microscopy was used to observe systematically the nanoindentation structures. The lengths of the rosette arms were multiplied by a factor of two to three during the annealing process at 500 °C and were determined to vary with Fm, which could be modeled considering the two step thermomechanical history. While almost no anisotropy was observed before annealing (after indentation at RT), the [110] arms were observed to extend almost twice as long as the [110] ones in n-doped specimens after annealing. This anisotropy was much reduced in p-doped specimens. Furthermore, almost no partial dislocations were observed whereas they were obvious in n-doped specimens before annealing. [ABSTRACT FROM AUTHOR]

Published
2009
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173. Epitaxial growth of quantum rods with high aspect ratio and compositional contrast.

Author

Li, L. H., Patriarche, G., and Fiore, A.

Subjects
*EPITAXY, *CRYSTAL growth, *MATRICES (Mathematics), *NANOSTRUCTURED materials, *NANOTECHNOLOGY
Abstract

The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization. [ABSTRACT FROM AUTHOR]

Published
2008
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174. Growth-interruption-induced low-density InAs quantum dots on GaAs.

Author

Li, L. H., Chauvin, N., Patriarche, G., Alloing, B., and Fiore, A.

Subjects
QUANTUM dots, INDIUM arsenide, GALLIUM arsenide, OSTWALD ripening, THIN films, OPTICAL properties
Abstract

We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/μm2) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 μm emission at 4 K. [ABSTRACT FROM AUTHOR]

Published
2008
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175. Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical properties.

Author

Michon, A., Hostein, R., Patriarche, G., Gogneau, N., Beaudoin, G., Beveratos, A., Robert-Philip, I., Laurent, S., Sauvage, S., Boucaud, P., and Sagnes, I.

Subjects
METAL organic chemical vapor deposition, EPITAXY, QUANTUM dots, PHOSPHINE, TRANSMISSION electron microscopy, PHOTOLUMINESCENCE
Abstract

This contribution reports the metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots with a voluntary V-alloying obtained owing to an additional phosphine flux during InAs quantum dot growth. The quantum dots were studied by photoluminescence and transmission electron microscopy. We show that the additional phosphine flux allows to tune quantum dot emission around 1.55 μm while improving their optical properties. The comparison of the optical and structural properties of the InAsP quantum dots allows to deduce their phosphorus composition, ranging from 0% to 30% when the phosphine/arsine flow ratio is varying between 0 and 50. On the basis of the compositions deduced, we discuss on the effects of the phosphine flow and of the alloying on the quantum dot growth, structural, and optical properties. [ABSTRACT FROM AUTHOR]

Published
2008
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176. Competition between InP and In2O3 islands during the growth of InP on SrTiO3.

Author

Saint-Girons, G., Regreny, P., Cheng, J., Patriarche, G., Largeau, L., Gendry, M., Xu, G., Robach, Y., Botella, C., Grenet, G., and Hollinger, G.

Subjects
NUCLEATION, INDIUM, PHOSPHORUS, OXYGEN, STRONTIUM, TITANIUM dioxide, CHEMISTRY, CRYSTALLOGRAPHY
Abstract

A study of the growth of InP islands on SrTiO3 (STO) substrates is presented. The nature and crystal orientation of the islands strongly depend on the growth temperature: below 410 °C, both InP and In2O3 islands coexist, while InP islands alone are formed above this temperature. InP islands are randomly oriented in the low growth temperature range and adopt an equilibrium orientation defined by [111]InP∥[001]STO in the growth direction and [110]InP∥[100]STO in the growth plane between 410 and 475 °C. This study highlights the complexity of the growth of InP on STO, which results from a combined influence of interface chemistry and crystallographic properties as well as of the nucleation kinetics. [ABSTRACT FROM AUTHOR]

Published
2008
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177. Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate.

Author

Semenova, E. S., Hostein, R., Patriarche, G., Mauguin, O., Largeau, L., Robert-Philip, I., Beveratos, A., and Lemaı⁁tre, A.

Subjects
QUANTUM dots, SUBSTRATES (Materials science), DISLOCATIONS in crystals, CRYPTOGRAPHY, TRANSMISSION electron microscopy, OPTICAL spectroscopy
Abstract

We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In0.42Ga0.58As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 μm at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths. [ABSTRACT FROM AUTHOR]

Published
2008
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178. Growth and characterization of InAs columnar quantum dots on GaAs substrate.

Author

Li, L. H., Patriarche, G., Rossetti, M., and Fiore, A.

Subjects
*COLUMNAR structure (Metallurgy), *QUANTUM dots, *QUANTUM electronics, *SEMICONDUCTORS, *MOLECULAR beam epitaxy, *OPTICAL amplifiers
Abstract

The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nm×20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers. [ABSTRACT FROM AUTHOR]

Published
2007
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179. Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation.

Author

Merckling, C., El-Kazzi, M., Saint-Girons, G., Hollinger, G., Largeau, L., Patriarche, G., Favre-Nicolin, V., and Marty, O.

Subjects
ALUMINUM oxide, SILICON, MOLECULAR beam epitaxy, THIN films, X-ray diffraction, ELECTRON diffraction, TRANSMISSION electron microscopy
Abstract

This work reports on the molecular beam epitaxy of high quality single crystal γ-Al2O3 thin films on Si(001) and Si(111) substrates. For both substrate orientations, film surfaces are found to be smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers. Reflection high energy electron diffraction, x-ray diffraction, and transmission electronic microscopy characterizations were used to study the epitaxial relationship and the structural quality of the γ-Al2O3 layers depending on the Si substrate orientation. On Si(111), the alumina layers present a high crystalline quality. Evidence is made for a “two-for-three” unit cell indirect epitaxial relationship between γ-Al2O3 and Si(111). On Si(001), after a transition from cubic to hexagonal surface symmetry, the growth planes of γ-Al2O3 change from (001) to (111) leading to a bidomain growth. [ABSTRACT FROM AUTHOR]

Published
2007
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180. Wetting layer states of InAs/GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer.

Author

Polish_hook, G., Ryczko, K., Motyka, M., Andrzejewski, J., Wysocka, K., Misiewicz, J., Li, L. H., Fiore, A., and Patriarche, G.

Subjects
QUANTUM dots, INDIUM arsenide, GALLIUM arsenide, MOLECULAR beam epitaxy, QUANTUM wells
Abstract

The authors present a modulated reflectivity study of the wetting layer (WL) states in molecular beam epitaxy grown InAs/GaAs quantum dot (QD) structures designed to emit light in the 1.3–1.5 μm range. A high sensitivity of the technique has allowed the observation of all optical transitions in the QD system, including low oscillator strength transitions related to QD ground and excited states, and the ones connected with the WL quantum well (QW). The support of WL content profiles, determined by transmission electron microscopy, has made it possible to analyze in detail the real WL QW confinement potential which was then used for calculating the optical transition energies. We could conclude that in spite of a very effective WL QW intermixing, mainly due to the Ga–In exchange process (causing the reduction of the maximum indium content in the WL layer to about 35% from nominally deposited InAs), the transition energies remain almost unaffected. The latter effect could be explained in effective mass envelope function calculations taking into account the intermixing of the QW interfaces described within the diffusion model. We have followed the WL-related transitions of two closely spaced QD layers grown at different temperatures, as a function of the In content in the capping layer. We have shown that changing the capping layer from pure GaAs to In0.236Ga0.764As has no significant influence on the composition profile of the WL itself and the WL QW transitions can be usually interpreted properly when based on the cap-induced modification of the confinement potential within a squarelike QW shape approximation. However, some of the observed features could be explained only after taking into consideration the effects of intermixing and InGaAs cap layer decomposition. [ABSTRACT FROM AUTHOR]

Published
2007
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181. Structural and optical properties of low-density and In-rich InAs/GaAs quantum dots.

Author

Alloing, B., Zinoni, C., Li, L. H., Fiore, A., and Patriarche, G.

Subjects
OPTICAL properties, DENSITY, INDIUM arsenide, GALLIUM arsenide, QUANTUM dots, MOLECULAR self-assembly, PHOTOLUMINESCENCE
Abstract

Self-assembled InAs/GaAs quantum dots have been grown at very low InAs growth rate in order to form sparse and large quantum dots (QDs) emitting in the near infrared (1300–1400 nm), for application as single-photon sources. The structural and optical properties of these QDs as a function of the growth rate were systematically investigated. The QDs grown at the lowest rate (∼10-3 ML/s) present a very low dot density (∼2×108 dots/cm2), high In content, and good size homogeneity. Photoluminescence and time-resolved photoluminescence measurements performed at different powers and temperatures provide information on their luminescence efficiency, and on the recombination processes occurring in the low-density QDs as compared to higher densities. [ABSTRACT FROM AUTHOR]

Published
2007
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182. Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001).

Author

Delhaye, G., Merckling, C., El-Kazzi, M., Saint-Girons, G., Gendry, M., Robach, Y., Hollinger, G., Largeau, L., and Patriarche, G.

Subjects
STRONTIUM compounds, THIN films, MOLECULAR beam epitaxy, X-ray spectroscopy, TRANSMISSION electron microscopy, SEMICONDUCTOR defects, THERMODYNAMICS
Abstract

This work reports on the structural properties of an epitaxial SrTiO3 (STO) layer grown by molecular beam epitaxy on a Si(001) substrate with a two step process. The study, which includes a complete characterization of large scale plane-view images of the STO layer, is based on a careful analysis of x-ray spectra and transmission electron microscopy images. The STO layer presents a good crystalline quality and a slight texturation related to the presence of extended defects. A thin Ti-rich amorphous silicate layer (thickness ≈1.3 nm) is formed at the interface between the STO and the Si substrate, evidencing the thermodynamic instability of the STO/Si interface. The difference between the thermal expansion coefficients of Si and STO is shown to be at the origin of an increased in-plane lattice parameter (3.927 Å) of the STO layer as compared to its bulk value (3.905 Å). This effect of differential thermal expansion is expected to be responsible for the formation of at least part of the extended defects of the STO layer. [ABSTRACT FROM AUTHOR]

Published
2006
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183. Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials.

Author

Cheyssac, P., Sacilotti, M., and Patriarche, G.

Subjects
NANOSTRUCTURES, METAL clusters, NANOCRYSTALS, NANOWIRES, ORGANOMETALLIC compounds
Abstract

The growth mechanism model of a nanoscaled material is a critical step that has to be refined for a better understanding of a nanostructure’s dot/wire fabrication. To do so, the growth mechanism will be discussed in this paper and the influence of the size of the metallic nanocluster starting point, referred to later as “size effect,” will be studied. Among many of the so-called size effects, a tremendous decrease of the melting point of the metallic nanocluster changes the physical properties as well as the physical/mechanical interactions inside the growing structure composed of a metallic dot on top of a column. The thermodynamic size effect is related to the bending or curvature of chains of atoms, giving rise to the weakening of bonds between them; this size or curvature effect is described and approached to crystal nanodot/wire growth. We will describe this effect as that of a “cooking machine” when the number of atoms decreases from ∼1023 at./cm3 for a bulk material to a few tens of them in a 1–2 nm diameter sphere. The decrease of the number of atoms in a metallic cluster from such an enormous quantity is accompanied by a lowering of the melting temperature that extends from 200 up to 1000 K, depending on the metallic material and its size under study. In this respect, the vapor-liquid-solid (VLS) model, which is the most utilized growth mechanism for quantum nanowires and nanodots, is critically exposed to size or curvature effects (CEs). More precisely, interactions in the vicinity of the growth regions should be reexamined. Some results illustrating the growth of micrometer-/nanometer-sized materials are presented in order to corroborate the CE/VLS models utilized by many research groups in today’s nanosciences world. Examples of metallic clusters and semiconducting wires will be presented. The results and comments presented in this paper can be seen as a challenge to be overcome. From them, we expect that in a near future an improved model can be exposed to the scientific community. [ABSTRACT FROM AUTHOR]

Published
2006
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184. Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy.

Author

Michon, A., Sagnes, I., Patriarche, G., Beaudoin, G., Mérat-Combes, M. N., and Saint-Girons, G.

Subjects
LUMINESCENCE, MORPHOLOGY, QUANTUM dots, ELECTRON microscopy, PHOTOLUMINESCENCE, SPECTRUM analysis
Abstract

This work reports on the influence of the InP cap-layer growth rate on the structural and optical properties of InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. A careful correlation between the structural and optical properties of the QDs completed by a modeling of their interband transition energy evidences the presence of different QD families with heights varying by monolayer steps. The analysis of transmission electron microscopy images and photoluminescence spectra demonstrates a drastic decrease of the QD height during the growth of the InP cap layer, due to As/P exchange. The efficiency of this erosion mechanism is shown to be strongly related to the QD exposure time to PH3, depending on the growth rate of the InP cap layer. [ABSTRACT FROM AUTHOR]

Published
2006
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185. Optical and structural investigation of In1-xGaxP free-standing microrods.

Author

Nakaema, M. K. K., Godoy, M. P. F., Brasil, M. J. S. P., Iikawa, F., Silva, D., Sacilotti, M., Decobert, J., and Patriarche, G.

Subjects
MICROMETERS, THICKNESS measurement, POLYCRYSTALS, CRYSTALS, CATALYSTS, PHYSICS
Abstract

We present a structural and optical characterization of scepterlike micrometer-sized free-standing structures, composed of a long InGaP rod with a metallic sphere on its top, grown on polycrystalline InP substrates. In contrast to the conventional vapor-liquid-solid growth method, no catalyst was deposited on the substrate. Instead, metallic In liberated from the InP substrate by phosphor evaporation works as the catalyst metal. We performed Raman scattering, photoluminescence spectroscopy, scanning electron microscopy, and energy dispersive x-ray spectroscopy measurements on individual structures. The alloy composition measured by microscopic techniques is in agreement with the values obtained by the optical measurements considering that the rod is strain free. The InGaP rods present essentially constant Ga composition within a fluctuation of ∼10% and efficient optical emission. We also observed a marked increase in the Raman-scattering signal at rod positions near the metallic sphere (the “neck”), which was attributed to a surface-enhanced Raman-scattering effect. Our results demonstrate the possibility of using InGaP rods for optical device applications. [ABSTRACT FROM AUTHOR]

Published
2005
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186. Electroabsorption spectroscopy of Ge/Si self-assembled islands.

Author

El kurdi, M., Boucaud, P., Sauvage, S., Aniel, F., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., and Patriarche, G.

Subjects
SPECTRUM analysis, GERMANIUM, SILICON, NONMETALS, ELECTRICAL engineering, PHYSICS
Abstract

We have performed an electroabsorption spectroscopy of Ge/Si self-assembled islands simultaneously in the near-infrared and in the midinfrared spectral range. The investigated structure consists of self-assembled Ge/Si islands embedded in a p-i-n junction. This active region is inserted into a 3-μm-thick Si0.98Ge0.02 waveguiding layer. Under a positive applied bias, the injected carriers give rise to a current-induced absorption resonant at 185 meV along with an enhanced transmission around 800 meV. The 185-meV resonance is polarized along the growth axis of the islands. The assignment of the optical transitions is made on the basis of a 14-band quantum well k·p calculation. We show that the midinfrared electroabsorption of the islands is associated with a bound-to-continuum transition between the ground states and the wetting layer states. The enhancement of the transmission is correlated to the bleaching of the interband absorption which results from hole injection in the islands. The carrier density and the parameters governing the carrier dynamics in the islands are deduced from the midinfrared modulation amplitude. An Auger recombination coefficient in the islands, C=1.6×10-30 cm6 s-1, is deduced at room temperature. [ABSTRACT FROM AUTHOR]

Published
2005
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187. Indentation-induced crystallization and phase transformation of amorphous germanium.

Author

Patriarche, G., Le Bourhis, E., Khayyat, M. M. O., and Chaudhri, M. M.

Subjects
*CRYSTALLIZATION, *PHASE transitions, *STATISTICAL physics, *AMORPHOUS substances, *GERMANIUM, *AMORPHOUS semiconductors
Abstract

It has been known for about 15 years that when a Vickers indenter is loaded on to a crystalline semiconductor, such as silicon, a semiconductor to metallic phase transition occurs during indenter loading and on removal of the indenter the material within the residual indentation becomes amorphous. Here we report a completely opposite effect: when a Berkovich or Vickers diamond indenter is loaded onto a submicrometer thick film of amorphous germanium, it crystallizes and undergoes structural phase transitions. These observations are based on our transmission electron microscopy and Raman scattering investigations, which have been described. It has also been shown that the indentation-induced crystallization and phase transitions occur close to the indenter tip, where the plastic strains are the highest. [ABSTRACT FROM AUTHOR]

Published
2004
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188. Absolute determination of the asymmetry of the in-plane deformation of GaAs (001).

Author

Largeau, L., Patriarche, G., Glas, F., and Le Bourhis, E.

Subjects
*ANISOTROPY, *JOINT dislocations, *ANNEALING of metals, *ELECTRON diffraction, *PARTICLES (Nuclear physics), *NUCLEAR physics
Abstract

Nanoindentation tests performed on GaAs (001) surfaces and on 4° misoriented GaAs (001) surfaces have led to the creation of anisotropic rosette arms lying along the <110> in-plane directions. One arm is always more elongated and constituted by perfect dislocations only while the shorter one shows in addition partial dislocations. Annealing of the deformed samples at 500 °C modifies the arrangement of the dislocations in the rosette arms but the asymmetry remains. Using a convergent beam electron diffraction method on plan views images obtained from indented (001) surfaces, we have determined the polarity of the samples. Experimental patterns were compared with simulated ones. The influences of several parameters were investigated and are discussed with particular attention addressed to the thickness of the samples. Before and after annealing, the longer rosette arm is constituted by α dislocations. The partial dislocations contained in the shorter rosette arm before annealing are of β type. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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189. Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands.

Author

El kurdi, M., Boucaud, P., Sauvage, S., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., and Patriarche, G.

Subjects
SILICON, PHOTONICS
Abstract

We have investigated a silicon-based near-infrared photodetector using a waveguide with strong optical confinement. The high-difference index waveguide is obtained with a silicon-on-insulator substrate. The optically active region consists of self-assembled Ge/Si islands embedded in a p-i-n junction. The Ge/Si islands grown by high-pressure chemical-vapor deposition exhibit a broad photoluminescence and electroluminescence which are resonant around 1.5 µm. The photoluminescence and electroluminescence energies are correlated to the island size and to the island composition using a six-band k-p calculation. The spectral responsivity of the detectors is measured in a front facet coupling geometry with a broadband source and with semiconductor laser diodes. For a 0 V applied bias, responsivities of 25 and 0.25 mA/W are measured at room temperature at 1.3 and 1.55 µm, respectively. [ABSTRACT FROM AUTHOR]

Published
2002
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190. Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots.

Author

Saint-Girons, G., Patriarche, G., Mereuta, A., and Sagnes, I.

Subjects
*METAL organic chemical vapor deposition, *QUANTUM dots, *NUCLEATION
Abstract

The formation process of a bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy (LP–MOVPE) grown InGaAs/GaAs quantum dots (QDs) is studied by transmission electronic microscopy. We demonstrate that in our growth conditions, the deposition of an InGaAs layer on an already existing array of InAs formed QDs leads to the nucleation of a second dots population. The InAs QDs nucleation is diffusion limited, inducing a low dots density due to the high In-atoms diffusion length typical of the MOVPE. On the contrary, the InGaAs QDs nucleation is enhanced by the roughness of the highly strained wetting layer of the InAs QDs, leading to higher density. The study of the photoluminescence spectra shows that the nucleation of InGaAs only occurs when the deposited InAs thickness exceeds about 1.4 monolayers, i.e., after the formation of the InAs QDs. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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194. Effects of using [As.sub.2] and [As.sub.4] on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

Author

Li, L.H., Patriarche, G., Linfield, E.H., Khanna, S.P., and Davies, A.G.

Subjects
Molecular beams -- Analysis, Arsenic -- Optical properties, Gallium arsenide -- Optical properties, Indium -- Optical properties, Physics
Abstract

The various impacts of the [As.sub.2] and [As.sub.4] arsenic sources on the optical properties exhibited by the InGaAs quantum rods are analyzed. The photoluminescence peak energies of the samples are shown to be highly dependent on the As source.

Published
2010

195. 3D GaP/Si(001) growth mode and antiphase boundaries

Author

Lucci, Ida, Charbonnier, Simon, Wang, Yanping, Bahri, M., Vallet, Maxime, Rohel, Tony, Bernard, Rozenn, Létoublon, Antoine, Largeau, L., Patriarche, G., Ponchet, Anne, Durand, Olivier, Pedesseau, Laurent, Gangopadhyay, S., Turban, Pascal, Cornet, Charles, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Birla Institute of Technology and Science (BITS Pilani), ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; In this work, we investigate the relationship between the surface roughness and antiphase domains in GaP layers grown by MBE on a vicinal Si (001) substrate. The main role of the starting Si surface before III‐V overgrowth is first discussed. Structural properties of antiphase domains (APDs) are investigated at the atomic scale by Scanning Tunneling Microscopy (STM) and Transmission Electron Microscopy (TEM). The correlation between the 3D growth mode and the emerging antiphase boundaries (APBs) is discussed in terms of surface/interface energy, supported by DFT calculations.

Published
2016

196. Three-dimensional in operando imaging of a semiconductor heterostructure through X-ray Bragg ptychography

Author

Pateras, A. I., Allain, Marc, Godard, P., Largeau, L., Patriarche, G., Talneau, A., Pantzas, K., Burghammer, M., Minkevitch, A. A., Chamard, Virginie, Institute for Photon Science and Synchrotron Radiation (ANKA), Karlsruher Institut für Technologie (KIT), Coherent Optical Microscopy and X-rays (COMiX), Institut FRESNEL (FRESNEL), Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU), Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Ferrand, Patrick, and Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

197. X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon

Author

Wang, Yanping, Létoublon, Antoine, Lucci, Ida, Cornet, Charles, Favre-Nicolin, V., Chahine, G., Eymery, J., Pedesseau, Laurent, Bahri, M., Largeau, L., Patriarche, G., Ponchet, Anne, Vallet, Maxime, Stodolna, Julien, Charbonnier, Simon, Turban, Pascal, Léger, Yoan, Guillemé, Pierre, Shülli, T., Durand, Olivier, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Chinese Scholarship Council (PHD), ANR-05-PADD-0014,ACDUQ,Action collective pour une maîtrise durable de la santé animale : qualification sanitaire en élevage de ruminants(2005), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
X-ray, Planar defects, coherent scattering, epitaxy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaP, Si
Abstract

International audience; GaP, quasi-lattice matched to Si, allows growth of low defect density III-V/Si pseudosubstrates [1]. However, Antiphase boundaries (APB) likely appear and must be avoided. In this context, X-ray nanodiffraction and Bragg coherent diffraction imaging (BCDI) have been used as non-destructive techniques for local characterization of APB configuration [2]. Different GaP/Si nanolayers were studied at ID01/ESRF with an 8 keV coherent xray beam. Here a 140nm thick GaP presents annihilated APB (less than 3/m emerging APB). Bragg geometry ptychography of the APB has been attempted using (002) GaP weak reflection. This shows a peak splitting, characteristic of a heterogeneous APB density. But a still too high defect density precludes successful phase retrieval imaging. Two-dimensional fast mapping (kmap) [3] over the (004) and the (002) reflections shows for different regions of integrated intensities (ROI) (Fig. 1a) weak (Bragg maximum -0.5° on rocking angle) and strong scattering conditions (Fig. 1b and 1c respectively). As shown fig. 1b), the weak scattered intensity in ROI1, exhibits contrast lines oriented along both [1 1 0] and [-1 1 0] crystallographic directions. This contrast corresponds to regions of high tilt, surrounding misfit dislocations [3]. Strong scattering conditions performed on the (004) (Fig. 1c) and the (002) Bragg reflections present a quite different contrast with large spotty regions. We believe that this anisotropic contrast is due to weak tilt/strain, associated to the APD annihilation process.1. Y. P. Wang et al., Appl. Phys. Lett. 107, 191603 (2015).2. S. Labat et al., ACS Nano 9, 9210 (2015).3. M. H. Zoellner et al., ACS Appl. Mater. Interfaces 7, 9031 (2015).

Published
2016

198. Combining efficient C-14-radiolabeling and radioimaging techniques of manufactured nanoparticles for toxicological studies

Author

Audisio, D., Czarny, B., Berthon, F., Georgin, D., Plastow, G., Pinault, M., Patriarche, G., Thuleau, Aurélie, Mayne-L'Hermite, M., Dive, Vincent, Taran, F., Service de Chimie Bio-Organique et de Marquage (SCBM), Médicaments et Technologies pour la Santé (MTS), Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Institut de Biologie et de Technologies de Saclay (IBITECS), Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Service d'Ingénierie Moléculaire pour la Santé (ex SIMOPRO) (SIMoS), Laboratoire Edifices Nanométriques (LEDNA), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

199. InAs/InP quantum dot nanowires with abrupt interfaces grown on silicon

Author

MAVEL , Amaury, Chauvin , Nicolas, Regreny , Philippe, Patriarche , G., Masenelli , Bruno, GENDRY , Michel, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Spectroscopies et Nanomatériaux (INL - S&N), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures ( INL - H&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Université de Lyon, Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Inl, Laboratoire INL UMR5270, École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI ] Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

September 4-9, 2016; International audience; no abstract

Published
2016

200. MBE growth of periodically-oriented GaSb on GaAs templates for frequency conversion in the mid-infrared wavelength range

Author

Cerutti, L., Roux, S., Patriarche, G., Garcia, M., Gérard, B., Grisard, A., Tournié, E., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Mécanique et Technologie (LMT), École normale supérieure - Cachan (ENS Cachan)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Université Catholique de Louvain = Catholic University of Louvain (UCL), Thales Research and Technology [Palaiseau], THALES [France], Centre Scientifique et Technique du Bâtiment (CSTB), and THALES

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

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