High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities.

Authors :: Kuszelewicz, R.
Benoit, J.-M.
Barbay, S.
Lemaı⁁tre, A.
Patriarche, G.
Meunier, K.
Tierno, A.
Ackemann, T.
Source :: Journal of Applied Physics; Feb2012, Vol. 111 Issue 4, p043107, 9p, 1 Black and White Photograph, 4 Diagrams, 1 Chart, 7 Graphs
Publication Year :: 2012
Abstract: Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10-8-2.1011 cm-3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers. [ABSTRACT FROM AUTHOR]