Search

Highly crystalline corundum structured α-(Ga0.42Fe0.58)2O3 alloy thin film showed magnetic properties at room temperature. Microstructure analysis of cross-sectional transmission electron microscope (TEM) observation and TEM energy dispersive X-ray spectroscopy measurement indicated that different crystal phase could not be detected as well as there is no remarkable phase separating area, that is, Fe and Ga ions are distributed uniformly in the film. Magnetic measurements were performed on α-(Ga1-xFex)2O3 (x = 0.24, 0.44, 0.58, 1.00) alloy thin films at 110 K. The induced magnetic moment per a Fe ion of α-(Ga0.42Fe0.58)2O3 at 5000 Oe is about 6 times larger than α-Fe2O3 thin film. Compared to the α-Fe2O3 thin films, the value of coercivity is also about 6 times in α-(Ga0.42Fe0.58)2O3, in contrast, there is no significant difference in value of coercivity of α-(Ga1-xFex)2O3 (x = 0.24, 0.44, 1.00) thin films. These means that the origin of magnetism is not the separation region of α-Fe2O3 in α-(Ga0.42Fe0.58)2O3 thin film. [ABSTRACT FROM AUTHOR]

In2O3 films were epitaxially grown on (0001)α-Al2O3 substrates by mist CVD, and the impact of hydrochloric acid (HCl) was investigated by varying the HCl concentration in the source solution. Single-phase rhombohedral corundum-type In2O3 films, without the incorporation of body-centered cubic bixbite-type In2O3 phases, could be successfully grown directly on α-Al2O3 substrates by controlling only the HCl concentration. In growth by mist CVD, adding HCl to the source solution was found to affect not only the dissolution of the source precursor but also the growth kinetics of phase control, surface migration and impurity incorporation. [ABSTRACT FROM AUTHOR]

The use of focused ion-beam (FIB) nanopatterning for manipulating self-assembled ZnO nanodots is described. The nanodots are found to evolve into single-crystalline dot clusters and rods with increasing metal-organic chemical-vapor deposition (MOCVD)-growth time.

Transparent conducing antimony doped tin oxide (SnOx:Sb) thin films were fabricated by solution-processed atmospheric-pressure 3rd generation mist chemical vapor deposition (3rd G mist CVD) system with two solution chambers and one mixing chamber to control the atmosphere in reaction area. To study how to reduce the resistivity, the effects of each additive component in dopant solution were investigated; this was followed by identification of components contributing to the fabrication of SnOx:Sb films. Experimentally, the HNO3 clearly affected the resistivity and the formation of SnO2 thin films through a change in the valence state of N derived from HNO3 promoting the transformation of Sn (II) and Sb (III) to Sn (IV) and Sb (V). Moreover, the values of electron and hole effective mass were defined using the specified referred parameters to confirm the band diagram of SnOx:Sb thin films fabricated by 3rd G mist CVD system. [ABSTRACT FROM AUTHOR]

Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the α-Ir2O3/α-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage. [ABSTRACT FROM AUTHOR]

Reports on the electrical properties of fluorinated silicon nitride films from current-voltage and capacitance-voltage charateristics of metal-nitride-silicon (MNS) diodes. Background on plasma-deposited silicon nitride; Illustration of deposition systems from gas mixtures; Resistivity and breakdown strength of the film.

Reports on the calculations of energy band gaps based on the semiempirical tight-binding model (STBM) for strained-layer superlattices. Significance of STBM; Formalism and parameters of the tight-binding model; Overview of strain-free tight-binding parameters.

Reports on the observation and characterization of deep donor centers (DX centers) in silicon-doped aluminum arsenide. Carrier concentration in the DX centers revealed by deep level transient spectroscopy; Properties of the DX center in silicon-doped aluminum arsenide; Band diagram of sample under the emission bias and the injection bias.

Discusses a study which investigated bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF[sub4] (or SiF[sub2]), N[sub2] and H[sub2] gas mixture. Way in which the mixture was investigated; Result of the complemental increase of fluorine with decrease of nitrogen and the passivation of silicon dangling bonds by fluorine atoms; Aspects that interest plasma-deposited silicon nitride insulating films.

Presents information on a study which showed that the concentration of interstitial lithium (Li) in ZnSe and ZnS can be reduced by above-band-gap photoirradiation. Theoretical model for Li-doped ZnSe; Calculation procedure; Results and discussion; Conclusions.