Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD.

In₂O₃ films were epitaxially grown on (0001)α-Al₂O₃ substrates by mist CVD, and the impact of hydrochloric acid (HCl) was investigated by varying the HCl concentration in the source solution. Single-phase rhombohedral corundum-type In₂O₃ films, without the incorporation of body-centered cubic bixbite-type In₂O₃ phases, could be successfully grown directly on α-Al₂O₃ substrates by controlling only the HCl concentration. In growth by mist CVD, adding HCl to the source solution was found to affect not only the dissolution of the source precursor but also the growth kinetics of phase control, surface migration and impurity incorporation. [ABSTRACT FROM AUTHOR]