Bonding configuration of fluorine in fluorinated silicon nitride films.

Discusses a study which investigated bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF[sub4] (or SiF[sub2]), N[sub2] and H[sub2] gas mixture. Way in which the mixture was investigated; Result of the complemental increase of fluorine with decrease of nitrogen and the passivation of silicon dangling bonds by fluorine atoms; Aspects that interest plasma-deposited silicon nitride insulating films.