341 results on '"Togo, M."'
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52. Reliability in gate first and gate last ultra-thin-EOT gate stacks assessed with CV-eMSM BTI characterization
53. Orientation Dependence of Si1-xCx:P Growth and the Impact on FinFET Structures
54. Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology
55. Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs
56. RMG Tech. Integration in FinFET Devices
57. Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel
58. Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
59. Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements
60. Atom Probe Tomography for 3D-dopant analysis in FinFET devices
61. Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
62. On the rseries extraction techniques for sub-22nm CMOS finfet and SiGe technologies
63. Charge based compact model for bulk FinFETs
64. High performance n-MOS finFET by damage-free, conformal extension doping
65. Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias
66. Positive bias temperature instabilities on sub-nanometer EOT FinFETs
67. Simple current and capacitance methods for bulk finFET height extraction and correlation to device variability
68. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
69. Ion-implantation-based low-cost Hk/MG process for CMOS low-power application
70. Correlation Between the $V_{\rm th}$ Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap Density
71. Microfluidic biofuel cells: Series-connection with superhydrophobic air valves
72. Formation of a stable triplex incorporating a CG interrupting site by a new WNA derivative containing 3-aminopyrazole as a nucleobase
73. Inhibitory Gating of Vibrissal Inputs in the Brainstem
74. High-Performance 45nm node CMOS Transistors Featuring Flash Lamp Annealing (FLA)
75. Layout-Design Methodology of 0.246-¿m2-Embedded 6T-SRAM for 45-nm High-Performance System LSIs
76. A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA(1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL
77. Newly Found Anomalous Gate Leakage Current (AGLC) for 65 nm Node and Beyond, and Its Countermeasure Using Nitrogen Implanted Poly-Si
78. Nested polymerase chain reaction for assessing the clinical course of tuberculous meningitis
79. Simple current and capacitance methods for bulk finFET height extraction and correlation to device variability.
80. Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen
81. Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs
82. Recoiled-oxygen-free processing for 1.5 nm SiON gate-dielectric in sub-100-nm CMOS technology
83. Impact of Nitrogen Profile on Negative-Bias Temperature Instability and CMOS Performance
84. Controlling base-SiO/sub 2/ density of low-leakage 1.6 nm gate-SiON for high-performance and highly reliable n/pFETs
85. Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation.
86. Impact of recoiled-oxygen-free processing on 1.5 nm SiON gate-dielectric in sub-100 nm CMOS technology.
87. Relationship between the Serum Level of Leptin and Life-Style Habits in Japanese Men
88. Effects of light and fluridone, an inhibitor of ABA biosynthesis, on a germination/dormancy cycle of Echinochloa crus-galli var. crus-galli seeds
89. 2.8-Gb/s 176-mW byte-interleaved and 3.0-Gb/s 118-mW bit-interleaved 8:1 multiplexers with a 0.15-μm CMOS technology
90. Thermally robust dual-gate CMOS integration technologies for high-performance DRAM-embedded ASICs.
91. A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs.
92. Multiple-thickness gate oxide and dual-gate technologies for high-performance logic-embedded DRAMs.
93. RTM - Fast Resin System for Class A Surface
94. Electron Microscopic Localization of Acridine Orange Chromatin Interaction Products in Rat Pheochromocytoma PC12 Cells
95. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques.
96. 2.8-Gb/s 176-mW byte-interleaved and 3.0-Gb/s 118-mW bit-interleaved 8:1 multiplexers with a 0.15-/spl mu/m CMOS technology.
97. Time-series analysis of stature and body weight in five siblings.
98. A comparative study of body composition of urban and rural Japanese boys 12 to 14 years old.
99. Urinary hydroxyproline, creatinine and urea excretion during the growth of five siblings.
100. Correlation Between the Vth Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap Density.
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