51. Turning ZrTe5 into semiconductor through atomic intercalation
- Author
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Jinsheng Wen, Yang-Yang Lv, Yan-Feng Chen, Qi-Yuan Li, Shao-Chun Li, Cheng-Long Xue, Li Zhu, Yan-Bin Chen, Zhen-Yu Jia, Wei Shi, Song Bao, Libo Gao, Jinghui Wang, and Wei-Min Zhao
- Subjects
Quantitative Biology::Biomolecules ,Condensed Matter - Materials Science ,Materials science ,Condensed matter physics ,Magnetoresistance ,Band gap ,business.industry ,Potassium ,education ,Intercalation (chemistry) ,General Physics and Astronomy ,chemistry.chemical_element ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,01 natural sciences ,Condensed Matter::Materials Science ,Semiconductor ,Sign reversal ,chemistry ,Topological insulator ,0103 physical sciences ,Atom ,010306 general physics ,business ,010303 astronomy & astrophysics - Abstract
In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap., 16 pages, 5 figures
- Published
- 2019