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Direct visualization of a two-dimensional topological insulator in the single-layer1T′−WTe2
- Source :
- Physical Review B. 96
- Publication Year :
- 2017
- Publisher :
- American Physical Society (APS), 2017.
-
Abstract
- We have grown nearly freestanding single-layer $1{T}^{\ensuremath{'}}\ensuremath{-}\mathrm{WT}{\mathrm{e}}_{2}$ on graphitized $6H$-SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer $\mathrm{WT}{\mathrm{e}}_{2}$ islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer $\mathrm{WT}{\mathrm{e}}_{2}$ at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs' physics and related applications.
- Subjects :
- Materials science
Condensed matter physics
Band gap
Fermi level
Order (ring theory)
Charge (physics)
02 engineering and technology
Electronic structure
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Condensed Matter::Materials Science
symbols.namesake
law
Topological insulator
0103 physical sciences
symbols
Scanning tunneling microscope
010306 general physics
0210 nano-technology
Realization (systems)
Subjects
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 96
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........751be6d4e53153fd0905347dce4691fd