145 results on '"Jacobson, D.C."'
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52. A review of rapid thermal annealing (RTA) of B, BF 2and As ions implanted into silicon
53. Boron pile up and clustering in silicon-on-insulator films.
54. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon.
55. Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation.
56. Local structure of 1.54-mum-luminescence Er[sup 3+] implanted in Si.
57. Density of amorphous Si.
58. Impurity trapping and gettering in amorphous silicon.
59. The Enhancement of the Interdiffusion in Si/Ge Amorphous Artificial Multilayers by Additions of B and Au
60. Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams
61. Epitaxial silicides
62. Laser surface alloying of gold films on nickel
63. Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon
64. A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
65. Laser surface alloying for passivation of TiPd
66. Radiation-enhanced diffusion of implanted impurities in amorphous Si
67. Diffusion of implanted impurities in amorphous Si
68. Laser Irradiation of Nickel: Defect Structures and Surface Alloying
69. Rapid Thermal Annealing in Si
70. Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.
71. Ion implantation in GaAs
72. Changing the Structural State of Amorphous Silicon by Ion Irradiation
73. Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation
74. Decaborane, an alternative approach to ultra low energy ion implantation
75. Transient enhanced diffusion from implantation of molecular decaborane ions
76. Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation [SOI technology]
77. Suppression of reverse short channel effect by a buried carbon layer
78. Modeling of ultra-low energy boron implantation in silicon
79. Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
80. Buried ultra-low-energy gate implants for sub-0.25 micron CMOS technology
81. A symmetric 0.25 μm CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography
82. Buried ultra-low-energy gate implants for sub-0.25 micron CMOS technology.
83. Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation [SOI technology].
84. Mechanistic studies of hydrophilic wafer bonding and Si exfoliation for SOI fabrication.
85. A symmetric 0.25 /spl mu/m CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography.
86. Integrated planar waveguide amplifier with 15 dB net gain at 1550 nm.
87. Transient enhanced diffusion from implantation of molecular decaborane ions.
88. Effect of MeV implantation gettering for improvement of device characteristics.
89. Laser Irradiation of Nickel: Defect Structures and Surface Alloying.
90. Fluorine-Enhanced Si:Er Light Emission.
91. Ic Compatible Processing of Si:Er for optoelectronics.
92. Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime.
93. The Enhancement of the Interdiffusion in Si/Ge Amorphous Artificial Multilayers by Additions of B and Au.
94. Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon.
95. Changing the Structural State of Amorphous Silicon by Ion Irradiation.
96. Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.
97. Rapid Thermal Annealing in Si.
98. Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation.
99. Nearly dispersionless microstrip for 100 GHz pulses utilizing a buried silicide groundplane.
100. Gettering of Co in Si by high-energy B ion-implantation and by p/p[sup +] epitaxial Si.
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