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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon.
- Source :
- Applied Physics Letters; 3/1/1999, Vol. 74 Issue 9, p1299, 3p, 2 Black and White Photographs, 5 Graphs
- Publication Year :
- 1999
-
Abstract
- Demonstrates the mechanism for the reduction of interstitial supersaturations in high-energy (MeV)-implanted silicon during thermal annealing. Measurement of interstitial supersaturations by B doping superlattices; Interstitial and vacancy distribution; Interaction of MeV-implantation-induced defects with defects from lower-energy implants.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4320655
- Full Text :
- https://doi.org/10.1063/1.123530