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Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation.
- Source :
- Applied Physics Letters; 2/8/1999, Vol. 74 Issue 6, p806, 3p, 1 Chart, 11 Graphs
- Publication Year :
- 1999
-
Abstract
- Proposes a method for preparing ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal-oxide-semiconductor field effect transistor device structures. Plasma immersion implantation pulse voltages and fluences implanted into silicon dioxide films; Areal densities of nitrogen and oxygen in the resulting films.
- Subjects :
- DIELECTRIC films
METAL oxide semiconductor field-effect transistors
SILICON oxide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4283471
- Full Text :
- https://doi.org/10.1063/1.123374