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304 results on '"Gerardin, S."'

51. Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

Author

Tajalli, A., primary, Stockman, A., additional, Meneghini, M., additional, Mouhoubi, S., additional, Banerjee, A., additional, Gerardin, S., additional, Bagatin, M., additional, Paccagnella, A., additional, Zanoni, E., additional, Tack, M., additional, Bakeroot, B., additional, Moens, P., additional, and Meneghesso, G., additional

Published
2018
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56. 1GigaRad TID impact on 28nm HEP analog circuits

Author

Resta, F, Gerardin, S, Mattiazzo, S, Paccagnella, A, De Matteis, M, Enz, C, Baschirotto, A, Baschirotto, A., Resta, F, Gerardin, S, Mattiazzo, S, Paccagnella, A, De Matteis, M, Enz, C, Baschirotto, A, and Baschirotto, A.

Abstract

The Total Ionizing Dose (TID) levels foreseen after the future upgrade of the CERN Large Hadron Collider (High Luminosity LHC) will heavily influence the performance of the electronics. A TID level of 1GigaRad will be accumulated in the innermost layer of the pixel detector in 10 years of operations, which could damage the readout circuits behavior with important failures in the experiments. To prevent this situation, the choice of a proper technology for the readout ASICs represents a key point. This paper deals with the characterization of single transistors and of an analog circuit, both realized in a TSMC 28nm bulk CMOS technology, after being irradiated with 1 GigaRad TID. nMOS devices result more resistant than pMOS showing a weak degradation of the electrical parameters. Nevertheless, the considerable leakage current increment is not negligible because it could affect analog circuits as that hereby presented. In the proposed analog circuit, the high radiation level induces a 20% gain reduction and an 80% slowdown of the Charge Sensitive Preamplifier time response.

Published
2017

57. Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Author

Mattiazzo, S, Bagatin, M, Bisello, D, Gerardin, S, Marchioro, A, Paccagnella, A, Pantano, D, Pezzotta, A, Zhang, C, Baschirotto, A, Zhang, CM, Mattiazzo, S, Bagatin, M, Bisello, D, Gerardin, S, Marchioro, A, Paccagnella, A, Pantano, D, Pezzotta, A, Zhang, C, Baschirotto, A, and Zhang, CM

Abstract

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an increase of 2-3 orders of magnitude, while only moderate degradation for other parameters has been observed. For pMOSFETs, a more severe degradation of parameters has been measured, especially in the drain current. This work is relevant as the evaluation of a new generation of CMOS technologies to be used in future HEP experiments.

Published
2017

59. Design of analog front-ends for the RD53 demonstrator chip

Author

Gaioni, Luigi, primary, De Canio, F, additional, Nodari, B, additional, Manghisoni, M, additional, Re, V, additional, Traversi, G, additional, Barbero, M.B, additional, Fougeron, Denis, additional, Gensolen, F, additional, Godiot, S, additional, Menouni, M, additional, Pangaud, P, additional, Rozanov, A, additional, Wang, A, additional, Bomben, M, additional, Calderini, G, additional, Crescioli, F, additional, Le Dortz, O, additional, Marchiori, G, additional, Dzahini, D, additional, Rarbi, F.E, additional, Gaglione, R, additional, Gonella, L, additional, Hemperek, T, additional, Huegging, F, additional, Karagounis, M, additional, Kishishita, T, additional, Krueger, H, additional, Rymaszewski, P, additional, Wermes, N, additional, Ciciriello, Fabio, additional, Corsi, F, additional, Marzocca, C, additional, De Robertis, G, additional, Loddo, F, additional, Licciulli, F, additional, Andreazza, A, additional, Liberali, V, additional, Shojaii, S, additional, Stabile, A, additional, Bagatin, M, additional, Bisello, D, additional, Mattiazzo, S, additional, Ding, L, additional, Gerardin, S, additional, Giubilato, P, additional, Neviani, A, additional, Paccagnella, A, additional, Vogrig, D, additional, Wyss, J, additional, Bacchetta, N, additional, Della Casa, G, additional, Demaria, N, additional, Mazza, G, additional, Rivetti, A, additional, Da Rocha Rolo, M.D, additional, Comotti, D, additional, Ratti, L, additional, Vacchi, C, additional, Beccherle, R, additional, Bellazzini, R, additional, Magazzu, G, additional, Minuti, M, additional, Morsani, F, additional, Palla, Fabrizio, additional, Poulios, S, additional, Fanucci, L, additional, Rizzi, A, additional, Saponara, S, additional, Androsov, K, additional, Bilei, G M, additional, Menichelli, M, additional, Conti, E, additional, Marconi, S, additional, Passeri, Daniele, additional, Placidi, P, additional, Monteil, E, additional, Pacher, L, additional, Gajanana, D, additional, Gromov, V, additional, Hessey, N, additional, Kluit, R, additional, Zivkovic, V, additional, Havranek, M, additional, Janoska, Z, additional, Marcisovsky, M, additional, Neue, G, additional, Tomasek, L, additional, Kafka, V, additional, Sicho, P, additional, Vrba, V, additional, Vila, I, additional, Lopez-Morillo, E, additional, Aguirre, M.A, additional, Palomo, F.R, additional, Munoz, F, additional, Abbaneo, D, additional, Christiansen, J, additional, Dannheim, D, additional, Dobos, D, additional, Linssen, L, additional, Pernegger, H, additional, Valerio, P, additional, Alipour Tehrani, N, additional, Bell, S, additional, Prydderch, M.L, additional, Thomas, S, additional, Christian, D.C, additional, Fahim, F, additional, Hoff, J, additional, Lipton, R, additional, Liu, T, additional, Zimmerman, T, additional, Garcia-Sciveres, M, additional, Gnani, D, additional, Mekkaoui, A, additional, Gorelov, I, additional, Hoeferkamp, M, additional, Seidel, S, additional, Toms, K, additional, De Witt, J.N, additional, Grillo, A, additional, and Paternò, Andrea, additional

Published
2017
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62. Upsets in Erased Floating Gate Cells With High-Energy Protons

Author

Gerardin, S., primary, Bagatin, M., additional, Paccagnella, A., additional, Visconti, A., additional, Bonanomi, M., additional, Calabrese, M., additional, Chiavarone, L., additional, Ferlet-Cavrois, V., additional, Schwank, J. R., additional, Shaneyfelt, M. R., additional, Dodds, N., additional, Trinczek, M., additional, and Blackmore, E., additional

Published
2017
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63. Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC

Author

Demaria, N., primary, Barbero, M.B., additional, Fougeron, D., additional, Gensolen, F., additional, Godiot, S., additional, Menouni, M., additional, Pangaud, P., additional, Rozanov, A., additional, Wang, A., additional, Bomben, M., additional, Calderini, G., additional, Crescioli, F., additional, Dortz, O. Le, additional, Marchiori, G., additional, Dzahini, D., additional, Rarbi, F.E., additional, Gaglione, R., additional, Gonella, L., additional, Hemperek, T., additional, Huegging, F., additional, Karagounis, M., additional, Kishishita, T., additional, Krueger, H., additional, Rymaszewski, P., additional, Wermes, N., additional, Ciciriello, F., additional, Corsi, F., additional, Marzocca, C., additional, Robertis, G. De, additional, Loddo, F., additional, Licciulli, F., additional, Andreazza, A., additional, Liberali, V., additional, Shojaii, S., additional, Stabile, A., additional, Bagatin, M., additional, Bisello, D., additional, Mattiazzo, S., additional, Ding, L., additional, Gerardin, S., additional, Giubilato, P., additional, Neviani, A., additional, Paccagnella, A., additional, Vogrig, D., additional, Wyss, J., additional, Bacchetta, N., additional, Canio, F. De, additional, Gaioni, L., additional, Nodari, B., additional, Manghisoni, M., additional, Re, V., additional, Traversi, G., additional, Comotti, D., additional, Ratti, L., additional, Vacchi, C., additional, Beccherle, R., additional, Bellazzini, R., additional, Magazzu, G., additional, Minuti, M., additional, Morsani, F., additional, Palla, F., additional, Poulios, S., additional, Fanucci, L., additional, Rizzi, A., additional, Saponara, S., additional, Androsov, K., additional, Bilei, G.M., additional, Menichelli, M., additional, Conti, E., additional, Marconi, S., additional, Passeri, D., additional, Placidi, P., additional, Casa, G. Della, additional, Mazza, G., additional, Rivetti, A., additional, Rolo, M.D. Da Rocha, additional, Monteil, E., additional, Pacher, L., additional, Gajanana, D., additional, Gromov, V., additional, Hessey, N., additional, Kluit, R., additional, Zivkovic, V., additional, Havranek, M., additional, Janoska, Z., additional, Marcisovsky, M., additional, Neue, G., additional, Tomasek, L., additional, Kafka, V., additional, Sicho, P., additional, Vrba, V., additional, Vila, I., additional, Lopez-Morillo, E., additional, Aguirre, M.A., additional, Palomo, F.R., additional, Muñoz, F., additional, Abbaneo, D., additional, Christiansen, J., additional, Dannheim, D., additional, Dobos, D., additional, Linssen, L., additional, Pernegger, H., additional, Valerio, P., additional, Tehrani, N. Alipour, additional, Bell, S., additional, Prydderch, M.L., additional, Thomas, S., additional, Christian, D.C., additional, Fahim, F., additional, Hoff, J., additional, Lipton, R., additional, Liu, T., additional, Zimmerman, T., additional, Garcia-Sciveres, M., additional, Gnani, D., additional, Mekkaoui, A., additional, Gorelov, I., additional, Hoeferkamp, M., additional, Seidel, S., additional, Toms, K., additional, Witt, J.N. De, additional, Grillo, A., additional, and Paternò, A., additional

Published
2016
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64. Investigation of hot carrier stress and constant voltage stress in high-κ Si-based TFETs

Author

Ding, L., Gnani, E., Gerardin, S., Bagatin, M., Driussi, Francesco, Palestri, Pierpaolo, Selmi, Luca, Royer, C. Le, Paccagnella, A., Ding, Lili, Gnani, Elena, Gerardin, Simone, Bagatin, Marta, Driussi, Francesco, Palestri, Pierpaolo, Selmi, Luca, Royer, Cyrille Le, and Paccagnella, Alessandro

Subjects
Tunnel FET, hot carrier stress, constant voltage tress, high-κ dielectric, High-κ dielectric, Hot carrier stre, hot carrier stress, Tunnel FET, constant voltage tress, high-κ dielectric, Constant voltage tre
Abstract

This paper reports the experimental investigation of hot carrier stress (HCS) and constant voltage stress (CVS) in high-κ Si-based tunnel FETs. For the devices in this paper, due to the large injection of cold carriers and to the presence of traps in the gate dielectric, the degradation of the transfer characteristics under CVS is much more severe than under HCS. The experimental results show that the sub-threshold swing remains stable under both HCS and CVS conditions, and it is not influenced by the stress-induced increase of the interface trap density.

Published
2015

65. Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source

Author

Andreani, C, Pietropaolo, A, Salsano, A, Gorini, G, Tardocchi, M, Paccagnella, A, Gerardin, S, Frost, C, Ansell, S, Platt, S, ANDREANI, C, PIETROPAOLO, A, SALSANO, A, TARDOCCHI, M, PACCAGNELLA, A, GERARDIN, S, FROST, C, ANSELL, S, PLATT, S., GORINI, GIUSEPPE, Andreani, C, Pietropaolo, A, Salsano, A, Gorini, G, Tardocchi, M, Paccagnella, A, Gerardin, S, Frost, C, Ansell, S, Platt, S, ANDREANI, C, PIETROPAOLO, A, SALSANO, A, TARDOCCHI, M, PACCAGNELLA, A, GERARDIN, S, FROST, C, ANSELL, S, PLATT, S., and GORINI, GIUSEPPE

Abstract

The VESUVIO beam line at the ISIS spallation neutron source was set up for neutron irradiation tests in the neutron energy range above 10 MeV. The neutron flux and energy spectrum were shown, in benchmark activation measurements, to provide a neutron spectrum similar to the ambient one at sea level, but with an enhancement in intensity of a factor of 107. Such conditions are suitable for accelerated testing of electronic components, as was demonstrated here by measurements of soft error rates in recent technology field programable gate arrays. © 2008 American Institute of Physics.

Published
2008

66. A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility

Author

Violante, M, Sterpone, L, Manuzzato, A, Gerardin, S, Rech, P, Bagatin, M, Paccagnella, A, Andreani, C, Gorini, G, Pietropaolo, A, Cardarilli, G, Pontarelli, S, Frost, C, VIOLANTE, M, STERPONE, L, MANUZZATO, A, GERARDIN, S, RECH, P, BAGATIN, M, PACCAGNELLA, A, ANDREANI, C, PIETROPAOLO, A, CARDARILLI, G, PONTARELLI, S, FROST, C., GORINI, GIUSEPPE, Violante, M, Sterpone, L, Manuzzato, A, Gerardin, S, Rech, P, Bagatin, M, Paccagnella, A, Andreani, C, Gorini, G, Pietropaolo, A, Cardarilli, G, Pontarelli, S, Frost, C, VIOLANTE, M, STERPONE, L, MANUZZATO, A, GERARDIN, S, RECH, P, BAGATIN, M, PACCAGNELLA, A, ANDREANI, C, PIETROPAOLO, A, CARDARILLI, G, PONTARELLI, S, FROST, C., and GORINI, GIUSEPPE

Abstract

We introduce a new hardware/software platform for testing SRAM-based FPGAs under heavy-ion and neutron beams, capable of tracing the bit-flips in the configuration memory back to the physical resources affected in the FPGA. The validation was performed using, for the first time, the neutron source at the RALILSIS facility. The ISlS beam features a 1/E spectrum, which is similar to the terrestrial one with an acceleration between 107 and 10 8 in the energy range 10-100 MeV. The results gathered on Xilinx SRAM-based FPGAs are discussed in terms of cross section and circuit-level modifications. © 2007 IEEE.

Published
2007

67. 65nm technology for HEP: status et perspective

Author

Valerio, P., Barbero, M.B., Fougeron, D., Gensolen, F., Godiot, S., Menouni, M., Pangaud, P., Rozanov, A., Wang, A., Bomben, M., Calderini, G., Crescioli, F., Genat, J.-F., Dortz, O. Le, Marchiori, G., Dzahini, Daniel, Rarbi, F.E., Gaglione, R., Gonella, L., Hemperek, T., Huegging, F., Karagounis, M., Kishishita, T., Krueger, H., Rymaszewski, P., Wermes, N., Ciciriello, F., Corsi, F., Licciulli, F., Marzocca, C., Robertis, G. De, Loddo, F., Tamma, C., Andreazza, A., Liberali, V., Shojaii, S., Stabile, A., Bagatin, M., Bisello, D., Mattiazzo, S., Ding, L., Gerardin, S., Giubilato, P., Neviani, A., Paccagnella, A., Vogrig, D., Wyss, J., Bacchetta, N., Canio, F. De, Gaioni, L., Nodari, B., Manghisoni, M., Re, V., Traversi, G., Comotti, D., Ratti, L., Vacchi, C., Beccherle, R., Bellazzini, R., Magazzu, G., Minuti, M., Morsani, F., Palla, F., Fanucci, L., Rizzi, A, Saponara, S., Androsov, K., Bilei, G.M., Menichelli, M., Conti, E., Marconi, S., Passeri, D., Placidi, P., Casa, G. Della, Demaria, N., Mazza, G., Rivetti, A., Rolo, M.D. Da Rocha, Monteil, E., Pacher, L., Gajanana, D., Gromov, V., Hessey, N., Kluit, R., Zivkovic, V., Havranek, M., Janoska, Z., Marcisovsky, M., Neue, G., Kafka, V., Sicho, P., Vrba, V., Vila, I., Aguirre, M.A., Muñoz, F., Palomo, F.R., Abbaneo, D., Christiansen, J., Dannheim, D., Dobos, D., Linssen, L., Pernegger, H., Tehrani, N.Alipour, Bell, S., Prydderch, M.L., Thomas, S., Christian, D.C., Deptuch, G., Fahim, F., Hoff, J., Lipton, R., Liu, T., Zimmerman, T., Garcia-Sciveres, M., Gnani, D., Mekkaoui, A., Gorelov, I., Hoeferkamp, M., Seidel, S., Toms, K., Witt, J.N. De, Grillo, A., Centre de Physique des Particules de Marseille (CPPM), and Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; The development of new experiments such as CLIC and the the foreseen Phase 2 pixel upgradesof ATLAS and CMS have very challenging requirements for the design of hybrid pixel readoutchips, both in terms of performances and reliability. To face these challenges, the use of a moredownscaled CMOS technology compared to previous projects is necessary. The CERN RD53collaboration is undertaking a R&D programme to evaluate the use of a commercial 65 nm technologyand to develop tools and frameworks which will help to design future pixel detectors. Thispaper gives a short overview of the RD53 collaboration activities and describes some examplesof recent developments.

Published
2014

70. Muon-induced soft errors in 16-nm NAND flash memories

Author

Bagatin, M., primary, Gerardin, S., additional, Paccagnella, A., additional, Visconti, A., additional, Beltrami, S., additional, Bertuccio, M., additional, Ishida, K., additional, Frost, C. D., additional, Hillier, A., additional, and Ferlet-Cavrois, V., additional

Published
2016
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76. CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments

Author

Demaria, N., primary, Dellacasa, G., additional, Mazza, G., additional, Rivetti, A., additional, Da Rocha Rolo, M. D., additional, Monteil, E., additional, Pacher, L., additional, Ciciriello, F., additional, Corsi, F., additional, Marzocca, C., additional, De Roberts, G., additional, Loddo, F., additional, Tamma, C., additional, Bagatin, M., additional, Bisello, D., additional, Gerardin, S., additional, Mattiazzo, S., additional, Ding, L., additional, Giubilato, P., additional, Paccagnella, A., additional, De Canio, F., additional, Gaioni, L., additional, Manghisoni, M., additional, Re, V., additional, Traversi, G., additional, Riceputi, E., additional, Ratti, L., additional, Vacchi, C., additional, Beccherle, R., additional, Magazzu, G., additional, Minuti, M., additional, Morsani, F., additional, Palla, F., additional, Liberali, V., additional, Shojaii, S., additional, Stabile, A., additional, Bilei, G. M., additional, Menichelli, M., additional, Conti, E., additional, Marconi, S., additional, Passen, D., additional, and Placidi, P., additional

Published
2015
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88. Proton induced trapping effect on space compatible GaN HEMTs

Author

Stocco, A., primary, Gerardin, S., additional, Bisi, D., additional, Dalcanale, S., additional, Rampazzo, F., additional, Meneghini, M., additional, Meneghesso, G., additional, Grünenpütt, J., additional, Lambert, B., additional, Blanck, H., additional, and Zanoni, E., additional

Published
2014
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92. Developments on DC/DC converters for the LHC experiment upgrades

Author

Abbate, C, primary, Alderighi, M, additional, Baccaro, S, additional, Busatto, G, additional, Citterio, M, additional, Cova, P, additional, Delmonte, N, additional, Luca, V De, additional, Fiore, S, additional, Gerardin, S, additional, Ghisolfi, E, additional, Giuliani, F, additional, Iannuzzo, F, additional, Lanza, A, additional, Latorre, S, additional, Lazzaroni, M, additional, Meneghesso, G, additional, Paccagnella, A, additional, Rampazzo, F, additional, Riva, M, additional, Sanseverino, A, additional, Silvestri, R, additional, Spiazzi, G, additional, Velardi, F, additional, and Zanoni, E, additional

Published
2014
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93. Neutron and alpha SER in advanced NAND Flash memories

Author

Bagatin, M, Gerardin, S, Paccagnella, A, Ferlet Cavrois, V, Visconti, A, Gorini, G, Andreani, C, Frost, C, GORINI, GIUSEPPE, Frost, C., Bagatin, M, Gerardin, S, Paccagnella, A, Ferlet Cavrois, V, Visconti, A, Gorini, G, Andreani, C, Frost, C, GORINI, GIUSEPPE, and Frost, C.

Abstract

We study the response of NAND Flash memories to neutron and alpha particle exposure, with both Single- and Multi-Level Cell architecture devices. We analyze the error rate in the terrestrial environment and discuss scaling trends

Published
2013

95. Neutron-Induced Upsets in NAND Floating Gate Memories

Author

Gerardin, S, Bagatin, M, Ferrario, A, Paccagnella, A, Visconti, A, Beltrami, S, Andreani, C, Gorini, G, Frost, C, FERRARIO, ALBERTO, GORINI, GIUSEPPE, Frost, C., Gerardin, S, Bagatin, M, Ferrario, A, Paccagnella, A, Visconti, A, Beltrami, S, Andreani, C, Gorini, G, Frost, C, FERRARIO, ALBERTO, GORINI, GIUSEPPE, and Frost, C.

Abstract

We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.

Published
2012

96. Temperature dependence of neutron-induced soft errors in SRAMs

Author

Bagatin, M, Gerardin, S, Paccagnella, A, Andreani, C, Gorini, G, Frost, C, GORINI, GIUSEPPE, Frost, C., Bagatin, M, Gerardin, S, Paccagnella, A, Andreani, C, Gorini, G, Frost, C, GORINI, GIUSEPPE, and Frost, C.

Abstract

We irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.

Published
2012

97. Scaling trends of neutron effects in MLC NAND Flash memories

Author

Gerardin, S, Bagatin, M, Paccagnella, A, Cellere, G, Visconti, A, Beltrami, S, Andreani, C, Gorini, G, Frost, C, Frost, CD, GORINI, GIUSEPPE, Gerardin, S, Bagatin, M, Paccagnella, A, Cellere, G, Visconti, A, Beltrami, S, Andreani, C, Gorini, G, Frost, C, Frost, CD, and GORINI, GIUSEPPE

Abstract

We investigate atmospheric neutron effects on floating gate cells in MLC NAND Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size. © 2010 IEEE.

Published
2010

98. Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source

Author

Andreani, C., Pietropaolo, A., Salsano, A., Gorini, G., Tardocchi, M., Paccagnella, A., Gerardin, S., Frost, C. D., Ansell, S., Platt, S. P., Andreani, C., Pietropaolo, A., Salsano, A., Gorini, G., Tardocchi, M., Paccagnella, A., Gerardin, S., Frost, C. D., Ansell, S., and Platt, S. P.

Abstract

The VESUVIO beam line at the ISIS spallation neutron source was set up for neutron irradiation tests in the neutron energy range above 10 MeV. The neutron flux and energy spectrum were shown, in benchmark activation measurements, to provide a neutron spectrum similar to the ambient one at sea level, but with an enhancement in intensity of a factor of 107. Such conditions are suitable for accelerated testing of electronic components, as was demonstrated here by measurements of soft error rates in recent technology field programable gate arrays.

Published
2008

99. Factors impacting the temperature dependence of soft errors in commercial SRAMs

Author

Bagatin, M., Gerardin, S., Paccagnella, A., Andreani, C., Gorini, G., Pietropaolo, A., Platt, S. P., Frost, C. D., Bagatin, M., Gerardin, S., Paccagnella, A., Andreani, C., Gorini, G., Pietropaolo, A., Platt, S. P., and Frost, C. D.

Abstract

We performed neutron and alpha-particle irradiation to reproduce the effects of the terrestrial environment on several commercial SRAMs manufactured by different vendors. We observed that, depending on the tested vendor, the number of errors either increases or slightly decreases for rising temperature, even in devices belonging to the same technology node. SPICE simulations were then used to investigate the temperature dependence of parameters like the feedback time and restoring current of the cell. The shape and magnitude of the particle-induced transient current was discussed as a function of temperature. The variability in the temperature response was attributed to the balance of contrasting factors, such as cell slowing down and increased diffusion collection with increasing temperature.

Published
2008

100. Neutron-induced soft errors in advanced flash memories

Author

Cellere, G., Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Roche, P., Gasiot, G., Sørensen, R. Harboe, Virtanen, A., Frost, C., Fuochi, P., Andreani, C., Gorini, G., Pietropaolo, A., Platt, S., Cellere, G., Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Roche, P., Gasiot, G., Sørensen, R. Harboe, Virtanen, A., Frost, C., Fuochi, P., Andreani, C., Gorini, G., Pietropaolo, A., and Platt, S.

Abstract

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

Published
2008

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