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A robust and low cost Si RFSOI Power Transistor which can deliver +31dBm output power with 74% of Power Added Efficiency (PAE) and 18dB of Gain has been optimized for 4G & 5G sub-6GHz Power Amplifier (PA). By means of innovative characterizations combining RF aging tests and modeling, it is proved that this great performance can be achieved while maintaining a very high level of reliability of the PA transistor.

Resume Introduction Les encephalites dysimmunitaires (ED) sont des pathologies rares et graves. Leur diagnostic repose sur un faisceau d’arguments, car il n’existe pas de gold standard. La decouverte d’un anticorps anti-neuronal est specifique mais inconstante. La TEP FDG presente une sensibilite elevee dans cette indication. Sa place est grandissante dans le diagnostic et le suivi des ED. Neanmoins, les correlations entre profil TEP 18FDG et les caracteristiques cliniques, biologiques et morphologiques des ED sont inconnues ; nous les avons etudiees sur une serie de cas. Materiel et methodes Nous avons recueilli retrospectivement les donnees des dossiers medicaux de 30 patients diagnostiques ED, ayant beneficie d’une TEP cerebrale au 18FDG et d’une ponction lombaire, de janvier 2010 a septembre 2015, au CHU de La Timone (Marseille). Les profils TEP ont ete analyses et correles aux profils biologiques et cliniques. Resultats Une association statistiquement significative a ete retrouvee entre la presence d’hypermetabolismes cerebraux et celle d’une synthese intrathecale, de meme qu’entre la presence d’un hypometabolisme cerebral et la presence de pathologies plus bruyantes (avec des IRM plus souvent pathologiques, des anticorps plus frequemment mis en evidence dans le LCR et sur le plan clinique). Il a par ailleurs ete retrouve que les profils TEP, bien que pathologiques le plus souvent, etaient tres variables. Discussion Il semble exister des associations preferentielles entre les patterns pathologiques en TEP et ceux de la biologie ; une etude de leur valeur pronostique permettrait d’aider davantage le clinicien.

Nous rapportons une observation originale de synovialosarcome du pied survenu chez une patiente âgee de 74 ans. Le synovialosarcome est une tumeur qui concerne habituellement l'adulte jeune et qui touche preferentiellement les grosses articulations. Ce cas clinique met l'accent sur une tumeur rare au pronostic potentiellement defavorable qu'il faut savoir evoquer devant une douleur inexpliquee, evoluant de maniere insidieuse, contrastant avec un examen clinique pauvre.

Self-heating in fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is experimentally studied using the gate resistance thermometry technique, in a wide temperature range from 300 down to 4.2 K. We demonstrate that below 160 K, the channel temperature increase ( $\Delta {T}$ ) due to self-heating starts to deviate significantly from the linear variation with the dissipated power, leading to an apparent power dependent thermal resistance. This power dependence is interpreted in terms of temperature dependent thermal conductivity. The thermal resistance dependence on the active device temperature ( ${T}_{\text {Device}}$ ) indicates that the former one is mainly driven by the thermal conductivity of the oxide layer. Moreover, based on this dependence we reconstructed the channel temperature increase for each dissipated power and ambient temperature, and we found that the calculated values were in a good agreement with the experimental ones. Results indicate that even at low temperatures, thermal resistance does not depend significantly on the silicon channel thickness (ranging from 7 up to 24 nm), whereas the buried-oxide thinning (145 and 25 nm) strongly reduces the magnitude of the thermal resistance. Finally, this paper intends to fill the gap of experimental data concerning self-heating in advanced FDSOI transistors at low temperatures, revealing limitations and perspectives that should be taken into account for future work.

International audience; A clear comparison between Atomic Layer Deposition and Ion Implantation Si doping techniques is established. Comparable remnant polarization and coercive fields are obtained at lower Si content (%Si) for Ion Implantation, with a slight decrease of endurance performance. Switching signal engineering demonstrates a wide range of performance achievable with HfO2:Si ferroelectric layer.

The impact of integrated gate impedances, passive (polycomb, R G ) and active (Input/Output MOSfet, Z load ), on the breakdown (BD) behaviors of 28nm Fully-Depleted Silicon-On-Insulator (FDSOI) transistors is discussed. It has been shown that R G and Z load affect directly the BD hardness of the devices. By reducing the BD hardness, a catastrophic failure of gate dielectric meaning complete loss of device functionalities can be avoided. Many configurations of R G , Z load are considered to obtain the best compromise in terms the BD hardness and functionalities of Device Under Test (DUT).

Novel HfO 2 -based non-volatile ferroelectric field effect transistors (FeFETs) are revolutionizing the field of ferroelectric memories and have the potential to be a solution for eNVM in advanced scaled nodes (

In this paper, we explore the influence of the fully recessed gate length on threshold voltage instabilities. The study has been performed by the use of ultra-fast pBTI measurements on GaN-on-Si E-mode MOSc-HEMTs, as well as TCAD simulations. It reveals that gate length reduction tends to decrease the pBTI degradation. Transient analyses (degradation/relexation) reveal same dynamics whatever the gate length while the value of the initial V TH directly influences BTI. TCAD simulations highlight that the full recess gate configuration creates a short-channel effect responsible for this peculiar Vth degradation.

In this paper, we investigate the influence of negative gate stress on threshold voltage V TH instabilities in GaN-on-Si devices. This study has been carried out by using ultra-fast Measurement-Stress-Measurement (MSM) procedure on GaN-on-Si E-mode MOSc-HEMTs (Enhancement-mode MOS-channel HEMTs) for different gate lengths L G . NBTI transients at different temperatures and complementary ToF-SIMS analysis reveal the influence of two trap populations involved on V TH instabilities, both of them are related to the C N acceptor traps. The first one is close to the interface between GaN and Al 2 O 3 gate oxide due to N-vacancies induced by the dry etching process, the second one is likely to be related to GaN:C layer. NBTI transients also exhibit a dependence with L G , which is consistent with the E-field distribution of the gate region obtained by TCAD simulations at different gate stress voltages, and confirm the proximity of a C N trap population to the gate oxide.

International audience; The electrical properties of copper tracks printed by laser-induced-forward-transfer (LIFT) are typically inferior to the bulk values. Several limiting factors have been indicated such as oxidation, droplet boundaries and grain boundaries. However, the relative contribution of each of these factors has not been determined. To improve the electrical properties of LIFT printed structures, an analysis of various factors is essential. Here, we concentrate on the effect of post-printing thermal treatment on LIFT printed copper structures. A reduction in electrical resistivity by a factor of similar to 3 is obtained resulting in a value lower than 3 times the bulk copper value (1.68 mu Omega.cm). Real time resistance measurements indicate that an efficient thermal annealing can be achieved at 200 degrees C-300 degrees C within a couple of minutes. The morphological changes associated with such thermal treatment were analyzed using HR-SEM and XRD and highlight the role of stress relief, grain growth and formation of new grains primarily at the inter-droplet interfaces.

Despite the lack of progress in the curative treatment of mental illness, especially schizophrenia, the accumulation of neuroscience data over the past decade suggests the re-conceptualization of schizophrenia. With the advent of new biomarkers and cognitive tools, new neuroscience technologies such as functional dynamic connectivity and the identification of subtle clinical features; it is now possible to detect early stages at risk or prodromes of a first psychotic episode. Current concepts reconceptualizes schizophrenia as a neurodevelopmental disorder at early onset, with polygenic risk and only symptomatic treatment for positive symptoms at this time. The use of such technologies in the future suggests new diagnostic and therapeutic options. Next steps include new pharmacological perspectives and potential contributions of new technologies such as quantitative system pharmacology brain computational modeling approach.

In this paper, we present for the first time specific methodology and test structures authorizing an accurate analysis of XPS under bias measurements. Such analysis which identifies effective biasing across the device, allows to determine the absolute energy levels of the different layers in the HKMG stack at any bias. This enables an accurate band diagram identification and it is applied to analyze the physical mechanisms at work in the threshold voltage (V T ) engineering of HKMG stacks. We demonstrate that V T shift induced by La and Al additives or metal gate thickness variations originates by the modifications of the dipole at SiO 2 /high-k interface.

session T7: Process and Material Technology; International audience; We investigate in detail, for the first time, both performance and reliability of a 3D sequential integration process. It is clearly demonstrated that the top level transistor can be successfully processed at 630°C with almost no impact on the performance and reliability of the bottom level. It is also highlighted that top level devices meet the P&NBTI reliability requirements. Finally an example of successful and robust 3D logic integration is proposed based on a 3D inverter combining a top-level PMOS with a bottom-level NMOS.

session 6F: Process Integration; International audience; The impact of 3D architectures and boosters on the trade-off performance/reliability is deeply investigated in this paper. “Finfet” transistor presents a slight superior trade-off than square shaped “πfet” device because of little improved performance and similar BTI&HC reliability. “Ωfet” also offers a better compromise than πfet due to improved BTI reliability. Finally strained SOI & SiGeOI devices are highly suitable since they allow boosting the transistor performance without any reliability penalty.

International audience; A new method denoted SRP is proposed to quicklyevaluate reversible and permanent components responsible forBTI degradation. It is based on a particular normalization ofNBTI drifts measured during DC stress and recovery. The originof this SRP is then highlighted by a complete modeling of NBTIdataset. It actually arises from the presence of two trappopulations with much different capture and emission timeconstants. The technique which can only be seen as $a\mathematical\ trick$ is very suitable to address the sensitivity ofseveral process steps like nitridation to BTI. It can also provide asimple analytical compact model easy to implement in a SPICElike simulator to analyze BTI reliability at circuit level.

International audience; For the first time, ultrafast AC pBTI measurements are applied to GaN on Si E-mode MOSc-HEMT and compared to DC pBTI. Full recess Al$_2$ O$_3$ /GaN MOS gate is submitted to AC signals with various frequencies, duty factors and stress times. The degradation and relaxation characteristics are then modeled through a RC model combined to a CET map and fitted to experimental data. This map reveals the presence of two trap populations, also observed through $\Delta$Vth degradation kinetics. Acceleration factors (gate voltage and temperature) are estimated as well as TTF (Time to Failure) under AC conditions and show an extended lifetime compared to DC stress conditions. Finally dynamic variability is studied and indicates that our devices are ruled by normal distributions.

Introduction Les nephropathies lupiques (NL) surviennent chez 30 % des patients et conduisent a l’insuffisance renale terminale (IRT) dans 17 a 25 % des cas. A ce stade, l’activite du lupus diminue pour s’eteindre durablement. Les etudes epidemiologiques sur l’extinction du lupus en dialyse sont rares, et aucune n’a decrit les consequences de l’extinction du lupus sur le devenir des patients. Methodes Decrire l’evolution de l’activite du lupus au stade d’IRT, comprendre les consequences de l’activite du lupus sur le devenir et la survie des patients. A partir du registre REIN, identification d’une cohorte de patients lupiques incidents en dialyse entre 2008 et 2011. Collecte des donnees du SNDS (hospitalisations, traitements et biologie) sur les 12 mois precedents le debut de la dialyse puis pendant 5 ans. Nous avons defini l’inactivite du lupus par l’absence de traitement immunosuppresseur et une corticotherapie inferieure a 5 mg/jour. Resultats obtenus ou attendus Nous avons identifie 181 patients lupiques incidents en dialyse. Nous avons obtenu les donnees du SNDS pour 151 d’entre eux. La majorite des patients sont de sexe feminin (86,2 %), l’âge median est de 43,6 ± 14,4 ans. La majorite (78,4 %) sont en hemodialyse. Parmi les patients en hemodialyse, 67,5 % debutent sur un catheter central et 33,1 % dans un contexte d’urgence. La probabilite de poussee de la maladie est de 9 % apres 18 mois d’inactivite. Nous avons defini l’extinction du lupus par une inactivite pendant 18 mois. Le delai median d’extinction apres le debut de la dialyse est de 17 mois. L’activite du lupus dans les 12 mois precedents le debut de la dialyse est associee a une meilleure survie des patients apres ajustement sur l’ensemble des facteurs confondants. Conclusion L’extinction du lupus correspond a une inactivite pendant 18 mois. En dialyse les patients presentent une extinction du lupus a une mediane de 17 mois.

In this paper, we present an innovative solution to successfully metallize Through Silicon Vias (TSV) with High Aspect Ratio (10:1). These structures represent a key element in the 3D mid-process integration approach. The metallization consists in depositing, respectively, a diffusion barrier and a seed layer, using two different conformal deposition techniques. The technique used for the barrier material is based on a MOCVD TiN process while the second one involves a copper electrografting method. An additional copper Physical Vapor Deposition (PVD) layer is temporarily deposited to fulfill the requested properties and finalize a viable TSV integration on double sided 300mm design architecture. Further electrical characterizations of Kelvin TSVs and daisy chains are obtained. On a first hand, a 33mOhm resistance value is measured for a single 10×100μm via structure. This measurement is consistent with the theoretical value expected for this particular TSV design. On a second hand, contact continuity of up to 754 via chain structures validates the potential viability of this integration architecture for 3D device manufacturing.

A differential desorption technique, named intermittent temperature-programmed desorption (ITPD), has been used to get new insights into the properties of La 1 − x Sr x Co 0.8 Fe 0.2 O 3 − δ perovskites. The apparent activation energy of desorption ( E app ) and the frequency factor ( ν ) were calculated from ITPD data, for the two distinct oxygen species desorbing from perovskite at temperatures lower than 400 °C. The low values (about 10 7 –10 8 s − 1 ) obtained for ν app indicated that re-adsorption occurred during the TPD process and therefore that E app is equal to the Heat of adsorption ( E = − Δ H ). The first oxygen species, related to lower desorption temperatures, exhibits a distribution of E from 105 to 125 kJ mol − 1 . The second one, related to higher desorption temperatures, corresponds to E = 146 ± 4 kJ mol − 1 and 139 ± 5 kJ mol − 1 , for x = 0.2 and x = 0.3, respectively. The relative amounts of these species contributing to the desorption peak are dependent upon Sr content in the perovskite.

Integration of fuel cells for nomad applications (like cell phone or notebook) is characterized by small dimensions and high performances of the component. To obtain theses properties, one of possibilities is to increase the active surface with patterned substrate. Then, the actual planar batteries must be replaced by 3D batteries. Most of deposition methods, used in the actual fuel cell process flow, are not compatible with the 3D deposition because they did not provide conformal coating. That is why we develop a PECVD electrolyte because this method is known to be compatible with 3D depositions. The PECVD electrolyte is based on a fluorocarboxylic acid, which is able to conduct protons. The obtained layer is a protonic conductor that can absorb water and stop hydrogen. Effects of elaboration parameters like pressure, power, or acid concentration on the ionic conductivity will be presented.

A differential desorption technique called intermittent temperature-programmed desorption (ITPD) was used to gain new information on the superficial oxygen species of SnO2, a solid used extensively for the preparation of sensors and redox catalysts. The use of an original device involving an induction heating system enabled the time necessary for ITPD determination to be decreased by a factor of 20 or so, compared to that with a classical apparatus. TPD and ITPD studies carried out in vacuum showed the existence of at least two distinct states desorbing at temperatures higher than 700 K. The corresponding amount of adsorbed oxygen was less than 10% of that necessary for the formation of a compact monolayer of oxide ions. These two states exhibited apparent activation energies of desorption, Eapp, equal to 285 ± 10 kJ/mol and 334 ± 8 kJ/mol, respectively. The corresponding frequency factors, v, were far higher than 1013 s−1, indicating that re-adsorption was unlikely and that Eapp was equal to the activati...

The integration of air gaps for advanced Cu interconnects is mandatory to achieve the performances required for high performance integrated circuits (ICs). The interest of their introduction as a function of the chosen architecture, i.e. hybrid (i.e. air cavities at metal levels with a low-K material at via level) or full homogenous air gaps with an effective relative constant close to 1, is discussed in terms of signal propagation requirements for delay, crosstalk and delay increased by crosstalk. The different approaches currently investigated within the microelectronic community are classified into two main categories depending on the use of a non-conformal plasma enhanced chemical vapor deposition (PE-CVD) including innovative alternatives or the removal of a sacrificial material during a specific technological operation. While the first technique,, faces many integration issues that can be alleviated at the detriment of the global performances, the second approach may be all the more promising as well-known materials such as USG or SiOC are now introduced as sacrificial dielectrics as an alternative to degradable polymers. However, it is evidenced from published results that air gaps integration maturity permits their introduction for the 32nm technology node high performance ICs.

Carbon layers are frequently deposited by plasma-enhanced chemical vapor deposition (PE-CVD). This technology is very promising because of its highly efficient control of film quality, easy integration in current microelectronic technologies, low cost, high efficiency, and reproducibility. Here, we report a study on carbon layer aging under different conditions: photochemical, 400 K in air or N2 atmosphere, O2, H2O, and NaCl. We focus specifically on infrared (Fourier transform infrared, or FTIR) and spectroscopic ellipsometry (SE) analyses. Thin films were deposited in a capacitively coupled radiofrequency (RF) plasma in CH4. Six different plasma conditions were used: three different RF plasma powers (20, 80, and 150 W) used on both electrodes [on the polarized one (cathode) and on the floating one (anode)]. Furthermore, films with three different thicknesses (10, 100, and 1000 nm) were deposited. First of all, an interface of about 50 nm on the anode and of about 200 nm on the cathode at 20 W increasing with the RF plasma power appears at the interface between the substrate and the film. Next, the film composition in the ternary diagram Csp2–Csp3–H shows that thicker films deposited on the anode are rather apparently polymer-like, in contrast with the ones deposited on the cathode, which are rather graphite-like (a-CH⇒a-C). Moreover, these films show different aging mechanisms in air. This paper will thus concentrate on the study of the aging mechanisms based on the comparison of films that underwent aging under different conditions. In the case of polymer-like films, aging mechanisms are attributed to oxidation. In contrast, for the films formed at the cathode, these phenomena are attributed to film oxidation and hydrolysis. As aging leads to modifications in electrical and optical properties, a method to avoid these causes is suggested.

The paper focused on the development of very dilute mixtures of chelating agents, acids and organic solvents for post etch residue (PER) removal and copper (Cu) low-k decontamination under supercritical CO 2 (SCCO 2 ) foradvanced nodes (< 65nm) BEOL integration. The Cu low-k decontamination ability of each mixture was carried out on Spin-On Dielectric (SOD) and Chemical Vapor Deposition (CVD) porous low-k. The copper decontamination ability of SCCO 2 /additives systems were also studied on ashed and unashed low-k blanket wafers. Finally, the paper presented the Cu decontamination performance and Cu PER removal ability of SCCO 2 /additive systems compared to conventional wet chemistries.

By mid-IR analysis, mixtures of stearic acid, a paraffinic compound and a fluorinated compound were analyzed using attenuated total reflection (ATR) spectroscopy and reflection–absorption infrared spectroscopy (RAIRS). The precision of the partial least square (PLS) models created for each of these two techniques were compared in order to work out a quality control process of the mixtures which are involved in mechanochemical coating technology. We obtained a good relationship between spectral data and concentration with ATR spectroscopy. However, RAIRS spectroscopy allows to observe the affinity of long-chain organic acids for steel surfaces, and to determine the actual composition of coatings.

Temperature-programmed desorption of oxygen and carbon dioxide was performed in a single experiment to characterise ceria-based catalysts. The amount of desorbed oxygen provides data on the amount of surface precious metal and their close vicinity. The amount of desorbed CO2 is related to ceria surface area.

Resume La tomographie par emission de positons (TEP) est une modalite d'imagerie medicale qui mesure la distribution tridimensionnelle d'une molecule marquee par un emetteur de positons. L'acquisition est realisee par un ensemble de detecteurs repartis autour du patient. Les detecteurs sont constitues d'un scintillateur qui est choisi en fonction de nombreuses proprietes, pour ameliorer l'efficacite et le rapport signal sur bruit. Le circuit de coincidences mesure les deux photons gamma de 511 keV emis dans des directions opposees qui resultent de l'annihilation du positon. Les coupes sont reconstruites par des algorithmes de plus en plus complexes pour s'adapter a des geometries d'acquisition tridimensionnelles. La correction des phenomenes physiques fournit une image representative de la distribution du traceur. Un examen TEP entraine pour le patient une dose efficace de l'ordre de 8 mSv. L'installation d'un TEP necessite un amenagement des locaux pour assurer la radioprotection du personnel. Cette technique est en evolution permanente, tant du point de vue du detecteur que de celui des algorithmes. Une nouvelle generation d'appareils TEP/tomodensitometre (TDM) offre des informations complementaires qui permettent de corriger l'attenuation, de localiser les lesions et d'optimiser les procedures therapeutiques. Tous ces developpements font de la TEP un outil pleinement operationnel, qui a toute sa place au sein de l'imagerie medicale.

The impact of material/process interactions on low temperature CVD-O3 low-k dielectric film properties are presented. The film under investigation is deposited following a three-step process consisting of a low temperature chemical vapor deposition (CVD), an ex situ high temperature cure in a controlled ambient and a plasma treatment to seal the porous surface of the dielectric. In this paper, the extent to which the air break exposure, the cure, the nature of the plasma and the substrate can affect the material properties is investigated. The influence of the resist stripping plasmas on the material sealing and the mechanical properties during integration is also discussed. Finally, the dielectric k-value as extracted from damascene structures using Raphael™ simulations is presented and discussed.

Objective: Improvement of neurosurgical techniques with a more detailed description of brain tumors and their functional environment. Methods: We performed: (1) anatomical magnetic resonance imaging (MRI) for reference, (2) functional sequences dedicated to the adjacent cortical structures (sensorimotor, visual, language paradigms), and (3) thallium 201 cerebral tomoscintigraphy to visualize active tumor invasion. Data were transferred to a workstation for automatic registration. Results: All data were combined into one synthetic image showing the foci of high proliferative activity, which have to be completely resected, and the peritumoral functional structures, which have to be spared in order to minimize postoperative sequelae. This trimodal image is entered into a surgical neuronavigation computer for preoperative planning in order to outline tumoral target and functional risk areas. All this information is displayed in the operative microscope (Zeiss MKM) optically linked to MR images. This multimodality technique diminishes operative time by reducing electrocorticography and improves the operative short-term outcome. Conclusion: Multimodal imaging is useful for optimization of neurosurgical tumor resection.

Intravitreal injection of the microglia inhibitor tuftsin 1-3 leads to an increase in retinal ganglion cell axonal regeneration into peripheral nerve grafts and a decrease in phagocytic cells in the retina. However, the relation of phagocytic cells and particularly microglia towards axonal regeneration remains unclear. Initially, to assess this, tuftsin 1-3's effect on axonal regeneration was reexamined by doing a dose-response study. Optimal doses were found to be 2.5 μg/ml and 250 μg/ml in rats and hamsters respectively. We then studied retinal phagocytic cells in rats. Microglial cells were classified as resting or activated based on their morphology following OX42 immunolabelling. In controls, most microglial cells were in the resting state. Optic nerve cut led to an increase in the total number of microglia and a ten-fold elevation in the proportion of activated cells; changes were more pronounced at the optic nerve stump. Anastomosis of an autologous segment of sciatic nerve to the stump of the freshly cut optic nerve minimized the overall increase in microglia, and combined with 2.5 μg/ml tuftsin 1-3, lead to a marked blunting of activation. Preservation within the retina of a higher proportion of resting over active form of microglia, and not the prevention of microglial proliferation per se, may be a crucial factor in allowing additional retinal ganglion cell axons to regenerate into peripheral nerve grafts.

In situ reflectivity measurements were carried out at room temperature and atmospheric pressure to follow dynamic structural variations occurring during pulsed laser irradiation of diamond-like carbon (DLC) thin films. Laser irradiation consisted of second harmonic (λ = 532 nm) picosecond pulses of a Nd-YAG laser, leading to a modification of the carbon layer structure. Irradiation at this wavelength usually leads to graphitization, i.e. an increase of the number and/or size of sp 2 clusters dispersed in the amorphous carbon structure of DLC films. One of the consequences of such a transformation is a pronounced change in the optical properties. Upon graphitization, the optical absorption strongly increases in the near-infrared region. In order to monitor such changes we used a probe beam tunable in this wavelength region. An optical parametric generator (OPG) and amplifier (OPG/OPA) with low energy pulses tunable in the near-infrared range between 700 nm and 2 μm was used to record reflectivity changes at several wavelengths. Such an in situ characterization reveals how the structural transformations proceed in the early phase of graphitization.

International audience; A disruptive approach to thermal energy harvesting is presented. The new technique can be used for powering ultra-low power electronics. We propose a two-step conversion of heat into electricity: thermal to mechanical accomplished with thermal bimetals and mechanical to electrical accomplished with piezoelectrics. Devices can work in a wide range of temperatures: from -40 degrees C to 300 degrees C and the available mechanical power density is in the order of 1 mW/cm(2). The first electrical results and the first prototype built on a flexible substrate are presented in this work. We evidenced that one of the keys to improve the generated power density is downscaling of individual devices. To demonstrate this point, laws modeling downscaling have been established and show that the miniaturization of the devices by a factor k increases the generated power density by the same factor, due to the higher heat transfer rate. The path followed in order to establish the laws is given in this paper. (C) 2014 Elsevier Ltd. All rights reserved.

International audience; The aim of this paper is to study the impact of the substrate stiffness on the bacterial adhesion. For this purpose, agarose hydrogels are used as substrates with controlled mechanical properties. Indeed, the elastic modulus of these hydrogels, more precisely the shear storage moduli G', evolves with the agarose concentration (in this study from 0.75% to 3%). Other physico-chemical characteristics of the surface, known to be involved in bacterial adhesion, as hydrophobicity, were confirmed to remain constant. Two marine bacterial strains, a positive Gram Bacillus sp. 4J6 and a negative Gram Pseudoalteromonas sp. D41 were selected. Their retention on the substrates was analysed by confocal laser scanning microscopy and by counting of viable adhered bacteria. It was demonstrated that surface elastic modulus correlated with bacterial retention. Bacteria 041 adhered in higher numbers to rigid surfaces. For 416, bacterial adhesion patterns were changed: clusterings were observed on surfaces with lower elastic modulus. Furthermore, a proteomic study, based on the total soluble proteome of D41 strain, highlights an impact of elastic modulus on proteins synthesis. These data demonstrated an adapted response of adhering bacteria on hydrogels of varying mechanical properties

Resume La tomographie a emission de positons realisant une imagerie metabolique fonctionnelle permet d’envisager un staging tumoral tant locoregional que metastatique plus fiable que l’imagerie classique. Ces informations permettent d’obtenir une cartographie de l’envahissement ganglionnaire plus precise et une delimitation plus sure du lit tumoral malin. Associee aux techniques dites conformationnelles, envisager une radiotherapie optimale semble possible. La pathologie maligne broncho-pulmonaire en est un bon exemple.

Stretch film, used for wrapping bales for silage, reacts very differently in the tropical Reunion Island compared to use in a temperate climate. Tropical climatic conditions have an adverse effect on the physical properties of the polythene film, in particular air-tightness, resistance to radiation and resistance to high temperatures. Modelling air-tightness tests has contributed to a better understanding of the effects of atmospheric conditions on measurements of pressure differences: temperature and air humidity have relatively little effect, while altitude has a major effect. If the measurements are made with a time lapse between wrapping and testing, tests can be used to compare the air-tightness of the bale wrapped with different films. The service life of film exposed on frames and wrapped roll bales provides the information needed to select film that can be stretched and can provide lasting air-tightness. The results contribute to the knowledge base on film that can be stretched under difficult conditions and on a certification methodology.

We investigate here the structure of mixed octadecylamine/butyrylcholinestase Langmuir−Blodgett films which have already been studied at the air−water interface (part 1). FTIR-ATR and AFM techniques were used to characterize mixed enzymatic LB films transferred onto silanized Ge and oxidized silicon supports, respectively. The structures of the films at 30 and 40 mN m-1 surface pressures are proposed, and a very well-structured film is obtained at 40 mN m-1.

Information on water transport along the polymer/substrate interface is valuable for understanding the mechanisms and the controlling factors affecting the water-induced adhesion loss of polymer-coated metals, adhesive-bonded joints, and polymer/fiber composites subjected to aqueous environments. This paper presents data to demonstrate the capability of a technique, which combines a vertical cell with Fourier transform infrared spectroscopy in the multiple internal reflection mode, for studying water transport along the polymer/substrate interface and interfacial hydrolytic stability of polymeric composites and systems exposed to water and high relative humidities. The technique can distinguish water transport through the film from that along the interface; the latter transport is predominant for polymer/untreated substrate systems. Spectroscopic analyses of fractured surfaces of poor and well-bonded polymer/substrate systems after water exposure indicate that the technique is capable of discerni...

Introduction Plusieurs moniteurs de dialyse affichent en temps reel la natremie du patient (NaCond) deduite de la valeur de conductivite de l’eau plasmatique calculee a partir de mesures de conductivite du dialysat. Ce travail compare les variations de NaCond durant la seance de dialyse avec celles de la natremie et de la tonicite plasmatiques mesurees au laboratoire. Patients et methodes Cinquante-cinq seances d’hemodialyse ont ete effectuees chez 21 patients sur des moniteurs 5008 (Fresenius) qui affichent en temps reel la valeur (NaCond) de la natremie. Un echantillon sanguin est preleve en debut et fin de seance pour la mesure au laboratoire de la natremie (mmol/L) de la kaliemie (mmol/L) de l’uree sanguine (mmol/L), de la protidemie (g/L) et de l’osmolalite plasmatique (mOsm/kg). Les valeurs de la natremie, de la kaliemie, de l’uree sanguine sont corrigees en fonction de la protidemie afin d’etre exprimees en millimoles par litre (ou kg) d’eau plasmatique. Les variations durant la seance de la natremie exprimee en mmol/kg et de la tonicite (definie comme osmolalite [mOsm/kg] − uree [mmol/kg]) sont comparees a la variation de NaCond. Resultats De facon significative (p Discussion L’isotonicite des seances de dialyse peut etre assuree en depit d’une augmentation de la natremie durant la seance, en partie parce que cette augmentation est compensee par une diminution de la kaliemie. Ce maintien de la tonicite est associe a une tendance (non significative probablement en raison d’un nombre insuffisant de seances) a la diminution de NaCond correspondant a une diminution de la conductivite plasmatique. Ceci peut etre explique, au moins partiellement, par le fait que, durant la seance, le chlorure est remplace par du bicarbonate (moins mobile en raison de sa taille) et le potassium par du sodium (moins mobile en raison de son deplacement sous forme hydratee). Conclusion L’isotonicite d’une seance d’hemodialyse ne requiert pas l’isonatremie.

L'essor des techniques d'imagerie fonctionnelle depuis une quinzaine d'annees a profondement modifie la maniere d'aborder la cartographie fonctionnelle du cerveau humain. Il a conduit a l'emergence de vastes projets confrontes a la manipulation d'enormes quantites de donnees anatomo-fonctionnelles. Ces projets impliquent la possibilite de comparer des individus et de thesauriser les resultats obtenus en matiere de localisation anatomique par rapport a un referentiel.

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μm CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.

The redox mechanism of polysulfides in nonaqueous solvents is examined. For that purpose, Li2S6 + DMF solutions have been investigated by using cyclic voltammetry and time-resolved spectroelectrochemical experiments coupling spectrophotometry and cyclic voltammetry. It is shown that the only redox couples involved in these solutions are S−n/S2−n with n = 3,4,6,8 and S8c/S−8c (c for cyclic). The experimental results are interpreted by the following mechanism: S 3 − + e − ⇔ S 3 2 − ( E 3 ) S 6 2 − ⇔ 2 S 3 2 − ( K 3 ) S 4 − + e − ⇔ S 4 2 ( E 4 ) S 8 2 − ⇔ 2 S 4 − ( K 4 ) S 6 − + e − ⇔ S 6 2 − ( E 6 ) S 8 e 2 ⇔ S 8 l − ( K 8 ) S 8 l − + e − ⇔ S 8 2 − ( E 8 ) 2 S 3 2 − ⇔ S 2 2 − + S 4 2 − ( K 3 D ) S 8 e + e − ⇔ S 8 e − ( E 0 ) 2 S 6 2 − ⇔ S 4 2 − ⇔ S 8 2 − ( K 6 D ) with E 3 E 4 E 0 E 6 E 8 S i 2 − + S j − ⇔ S i − + S j 2 − ( K i j r ) with i or j = { 3 , 4 , 6 , 8 } and i ≠ j This mechanism has been simulated and adjusted to the experimental voltammograms in broad temperature (233 to 313 K) and scan rate (50 to 2000 mV/s) ranges, recorded for an initial scan in the positive direction and in the negative direction. We have obtained a complete description of the redox properties of sulfur and polysulfides in this solvent. We have shown that only the radical anions S−n are reducible and that only the dianions S2−n are oxidizable. It is also shown that this mechanism describes the two steps of the reduction mechanism of sulfur in DMF.

SiOxNy based materials were deposited at low substrate temperature (300 °C) and low pressure (0.6 Torr) in a plasma enhanced chemical vapor deposition reactor. The precursor gases were nitrous oxide (N2O) and silane (SiH4); the ratio of the two-gas concentration N2O/SiH4=α was a critical determinant of film structure and composition. An extensive analysis of SiOxNy based materials was carried out using Fourier transform infrared, and Rutherford backscattering, and Auger and ellipsometric spectroscopies. The two-phase structure of this material was deduced. This structure favors a high silicon film concentration and provides a sufficiently absorbing layer at photolithographic wavelengths (365, 248, and 193 nm). Thanks to its optical and physical properties silicon oxynitride constitutes a good antireflective layer for photolithographic applications.

Silicon dioxide has been deposited at low pressure (1 Torr) and low substrate temperature (0 °C) by chemical vapor deposition (CVD) using SiH4 and hydrogen peroxide (H2O2) concentrated at 30% or 60%. The effect of solution concentration on film properties has been investigated: characterization of the deposited films has been carried out by ex situ Fourier transform infrared spectroscopy, ellipsometry, and mechanical stress measurements. For shallow trench isolation applications, the physical and electrical properties of the CVD oxide must be close to those of a thermal oxide. Such properties can be obtained by in situ annealing.

The reduction mechanism of polysulfides in dimethylformamide (DMF) is examined. With this aim, Li 2 S 6 + DMF solutions have been investigated by using cyclic voltammetry and time resolved spectroelectrochemical experiments coupling spectrophotometry and cyclic voltammetry. It is shown that the only reducible polysulfides in these solutions are S 3 − and S 4 − . The experimental results are interpreted by the following mechanism: This mechanism has been simulated and adjusted to the experimental voltammograms in a wide temperature (233 to 313 K) and scan rate (50 to 2000 mV/s) range. We discuss the experimental data, the choice of the mechanism and its ability to describe the experimental data. It is shown that this mechanism also describes the second reduction wave observed in solutions of sulfur (S 8 ) in DMF.

We have re-examined, using cyclic voltammetry, the electrochemical reduction of sulfur in DMF. The main purpose of this work is the determination of the electrochemical mechanism of this reduction and the identification of the opening step of the ring S8. We propose the following electrochemical mechanism which neglects the weak disproportionation of S82−: S 8 c + e − ⇄ S 8 c - ( E c ) S 8 c - ⇄ S 8 1 - ( K 1 ) S 8 1 - + e − ⇄ S 8 1 2 - ( E 1 ) a n d E 1 > E c S 8 c - + S 8 1 - ⇄ S 8 c + S 8 1 2 - ( K 2 = exp ⁡ [ ( F / R T ) ( E 1 − E c ) ] ) This mechanism (ECE) takes into account the ring character (c) of sulfur in the solution and the linear character (1) of the S82− polysulfide. It has been simulated and adjusted to the experimental data in a wide range of temperatures (233 to 313 K) and scan rates (50 to 2000mV s−1). We shall discuss the choice of this mechanism and the results.

The electrochemical study of solutions of lithium polysulfides (Li 2 S n ) or ammonium polysulfides ((NH 4 ) 2 S n ) in liquid ammonia allows the specific study of the oxidation of S 2− 4 and S 2− 6 ions. This has been conducted by using cyclic voltammetric experiments and, for the first time in liquid ammonia, time resolved spectroelectrochemical measurements coupling cyclic voltammetric and absorption spectra recording. These experiments have been performed vs. concentration, temperature and the stoichiometry n of the solutions in order to determine the oxidation mechanisms. It is shown that the oxidation of S 2− 4 leads to the S 2− 6 and S − 3 polysulfides. The oxidation of S 2− 6 gives S 2− 8 , unstable in liquid ammonia. However, the lifetime of S 2− 8 allows it to be oxidized into S 8 , soluble in liquid ammonia. It is also shown that the solubilization process of S 8 in liquid ammonia is slow enough to allow the observation of the reduction of S 8 . The reduction wave of S 8 has the characteristics associated with an insoluble species. The spectroelectrochemical experiments also display the solubilization process of sulfur (S 8 ) in liquid ammonia and give evidence for the formation of S 4 N − species resulting from this solubilization. The oxidation processes of polysulfides S 2− 4 and S 2− 6 are discussed.