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Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance
- Source :
- 2019 IEEE 11th International Memory Workshop (IMW), 2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩
- Publication Year :
- 2019
- Publisher :
- HAL CCSD, 2019.
-
Abstract
- International audience; A clear comparison between Atomic Layer Deposition and Ion Implantation Si doping techniques is established. Comparable remnant polarization and coercive fields are obtained at lower Si content (%Si) for Ion Implantation, with a slight decrease of endurance performance. Switching signal engineering demonstrates a wide range of performance achievable with HfO2:Si ferroelectric layer.
- Subjects :
- Materials science
Silicon
chemistry.chemical_element
02 engineering and technology
01 natural sciences
memory
Atomic layer deposition
0103 physical sciences
component
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
HfO2
010302 applied physics
endurance
FeRAM
business.industry
Doping
021001 nanoscience & nanotechnology
Polarization (waves)
Ferroelectricity
Ion implantation
chemistry
Ferroelectric RAM
Optoelectronics
0210 nano-technology
business
Tin
Subjects
Details
- Language :
- English
- ISBN :
- 978-1-72810-981-7
- ISBNs :
- 9781728109817
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE 11th International Memory Workshop (IMW), 2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩
- Accession number :
- edsair.doi.dedup.....e400979c5b1a725c8889f66cc1ba58cb