Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

MLA

Philippe Boivin, et al. Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance. May 2019. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....e400979c5b1a725c8889f66cc1ba58cb&authtype=sso&custid=ns315887.

APA

Philippe Boivin, Jean-Paul Barnes, Jean Coignus, Mickael Gros-Jean, S. Jeannot, F. Gaillard, I. Bottala-Gambetta, Nicolas Vaxelaire, Laurent Grenouillet, J. Ferrand, Etienne Nowak, T. Francois, Marc Bocquet, & P. Chiquet. (2019). Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance.

Chicago

Philippe Boivin, Jean-Paul Barnes, Jean Coignus, Mickael Gros-Jean, S. Jeannot, F. Gaillard, I. Bottala-Gambetta, et al. 2019. “Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance,” May. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....e400979c5b1a725c8889f66cc1ba58cb&authtype=sso&custid=ns315887.