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We have demonstrated GaN microstructures formed by polarity-selective chemical etching in KOH solution. It was found that KOH selectively etches N-polar GaN but not Ga-polar GaN. The polarity-patterned GaN was grown by plasma-assisted molecular beam epitaxy. For intermediate etching times, hexagonal GaN pyramids were formed in the N-polar regions. With prolonged etching, the N-polar GaN can be completely removed. A one-dimensional array of GaN stripes and a two-dimensional array of hexagonal holes formed in a GaN matrix have been fabricated. Extremely smooth vertical sidewalls have been achieved along with an etch depth of up to 4 µm.

Using two-photon excitation, we study the excitation power density dependence and spatial variation of photoluminescence (PL) in GaN films grown by molecular beam epitaxy. Under our experimental conditions, the excitation power density dependence is quadratic for near band-gap emission (NBE) and linear for yellow luminescence (YL), consistent with the YL process being saturated. The PL mapping reveals NBE fluctuations at the domain-size scale while YL is uniform. These results provide strong evidence that the spatial distribution of deep levels associated with YL is uniform; hence, YL is unrelated to dislocations.

In situ Ga-doped ZnO nanotips were grown on amorphous fused silica substrates using metalorganic chemical vapor deposition. Structural, optical, and electrical properties of as-grown ZnO nanotips are investigated. Despite the amorphous nature of fused silica substrates, Ga-doped ZnO nanotips are found to be single crystalline and oriented along the c-axis. Photoluminescence (PL) spectra of Ga-doped ZnO nanotips are dominated by near-band-edge emission with negligible deep-level emission. The increase in PL intensity from Ga doping has been attributed to the increase of Ga donor-related impurity emission. Current–voltage characteristics of the ZnO nanotips are measured by conductive-tip atomic force microscopy, which shows the conductivity enhancement due to Ga doping.

We report the experimental demonstration of second-harmonic generation in periodically poled GaN by first-order quasiphase matching. The periodically poled structure was grown by plasma-assisted molecular-beam epitaxy. We observed about 9 μW of second-harmonic power from a fundamental input laser wavelength of 1658.6 nm with a normalized conversion efficiency of 12.76% W−1 cm−2. The ability to perform nonlinear wavelength conversion by periodic poling and the fact that GaN has a very wide window of transparency, pave the way for GaN to be used for nonlinear optical devices in telecommunications as well as a nonlinear light source for biochemical detection in the far infrared and deep ultraviolet.

We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 20] direction with the [0001] axis lying in the plane of the substrate. The 18-A GaN quantum wells exhibit luminescence at 326 nm, which is in agreement with the transition energy calculated using a flat-band model; that is, without the presence of a built-in electric field.

We measured the resonant nonlinear optical response of the intersubband transitions in GaN/AlGaN multiple quantum well structures. The measured value for the nonlinear susceptibility is found to be much smaller than previous theoretical predictions. This is attributed to a large electron dephasing due to material imperfections. We show that at higher incident intensities, absorption saturation is possible, and measure the saturation intensity for various wavelengths around the transition resonance. We also discuss the prospects of using such structures as building blocks for all-optical nonlinear switches, in light of our experimental findings.

Scanning Kelvin force microscopy is applied to study the charge nature of threading dislocations on GaN surfaces. On the oxidized surface, the surface potential maps show little change near dislocations, indicating that if the dislocations are charged in the bulk, the charges are either screened or depleted due to band bending. After cleaning in hot H3PO4, the potential near dislocations located at domain boundaries and inside domains is found to be lower, consistent with excess local negative fixed charges. Curiously, no contrast was seen for the screw dislocations at the centers of growth spirals even after H3PO4 treatment. Thus, either these screw dislocations have no gap states, or if they do have gap states, the positions are higher in energy (closer to conduction band edge) than the gap states of other dislocations.

We report on a comparative study of room temperature intersubband electron scattering lifetimes in GaN/AlGaN single and coupled double multiple quantum well (QW) samples with peak absorption wavelengths ranging from 1.4 to 1.7 μm. Using time-resolved pump-probe spectroscopy electron scattering times as short as ∼160 fs have been measured for a coupled QW sample and ≲300 fs for single QW samples. While no significant dependence on the excitation power has been observed, a decrease of the scattering times with increasing probe wavelength has been measured and may be attributed to monolayer fluctuations in the samples.

We present experimental evidence of the nonlinear behavior of the macroscopic polarization in GaN/AlxGa1−xN quantum wells. This behavior is revealed by determining the barrier-well polarization difference as a function of applied hydrostatic pressure. The polarization difference and corresponding built-in electric field in the wells increase with applied pressure at a much higher rate than expected from the linear model of polarization. This result, universally observed in the quantum well structures with different AlN mole fraction in the barriers, is explained by the nonlinear dependence of the piezoelectric polarization in GaN and AlN on the strain generated by pressure.

Intersubband absorption in coupled GaN/AlGaN double quantum wells (DQWs) has been measured. The samples were grown by molecular-beam epitaxy on a sapphire substrate and with large (0.65 or 0.9) AlN-mole fraction in the barriers. Peak absorption wavelengths as short as 1.35 and 1.52 μm were measured for a symmetric DQW of 12 A wide wells coupled by a 10 A wide barrier, which also showed evidence of excited-state anticrossing. As expected, asymmetric DQWs displayed no such anticrossing, and the ground-state anticrossing energies were found to be much smaller, as a result of the comparatively large effective electron mass, than the energy broadening of individual transitions. Degenerate doping of the DQWs was used to establish a common reference energy at the Fermi level, which allows overcoming uncertainties related to intrinsic internal electric fields. The asymmetric DQWs displayed peak absorption wavelengths between 1.5 and 2.9 μm.

Intersubband optical absorption around 1.55 μm has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular-beam epitaxy. First, peak absorption wavelengths as short as 1.41 μm are reported for ultranarrow, ⩾11 A wide, well-doped MQWs with high, 85%, AlN mole-fraction barriers. Second, in order to enable modulation doping as well as the use of lower AlN mole-fraction barriers, we designed and fabricated QWs embedded in barriers consisting of a short period superlattice of narrow GaN QWs and only 65% AlN mole-fraction barriers. The resulting electron Bragg confinement allows peak absorption wavelengths as short as 1.52 μm. Furthermore, the structures can now be modulation doped through doping of the narrow superlattice wells and subsequent charge transfer into the active well. We observe a reduction of the absorption linewidth, from ∼200 to ∼130 meV, for these structures.

Intersubband optical absorption in narrow, 15–30 A wide, GaN/AlGaN quantum wells has been measured. The samples were grown by molecular-beam epitaxy on sapphire substrate and the barrier AlN mole fraction was varied from 0.45 to 0.8. Peak absorption wavelengths ranged from 4.2 μm for 30 A wide wells to 1.77 μm for a 15 A wide well. Modeling shows that a large contribution to the considerable spectral width of the absorption of ∼150 meV likely results from monolayer fluctuations. In addition to the composition dependent band offset, the intrinsic electric fields in the wells and barriers are the determining factors for the shortest possible wavelength.

A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy. The number of periods for the DBRs ranges from 20.5 to 25.5 and the thickness of the quarterwave layers were chosen such that the peak reflectance occurs from the near ultraviolet to green wavelength regions. Peak reflectance values between 97% and 99% were obtained for these DBRs. The best sample has a peak reflectance up to 99% centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data for this sample were compared with simulations using the transmission matrix method and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance, and the locations of the sidelobes. The thickness of the quarterwave layers and uniform periodicity of the bilayers were confirmed by cross-section transmission electron microscopy. A network of cracks was observed in some of the samples and this is attributed to tensile stress in the AlN layers. We have grown asymmetric DBRs with thicker AlN layers and thinner GaN layers to reduce the tensile strength in the AlN layers. Such an approach resulted in samples that have significantly less cracks or even crack-free.

GaN/SiC heterojunction diodes have been fabricated and characterized. Epitaxial n-type GaN films were grown using metalorganic chemical vapor deposition (MOCVD) and electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) on p-type Si-face 6H-SiC wafers. The I–V characteristics have diode ideality factors and saturation currents as low as 1.2 and 10−32 A/cm2, respectively. The built-in potential in the MOCVD- and ECR-MBE-grown n-p heterojunctions was determined from capacitance–voltage measurements at 2.90±0.08 eV and 2.82±0.08 eV, respectively. From the built-in potential the energy band offsets for GaN/SiC heterostructures are determined at ΔEC=0.11±0.10 eV and ΔEV=0.48±0.10 eV.

The lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy doped n type with Si to the levels of 10¹⁵-10²⁰cm⁻³ was investigated. The room temperature electron mobility versus carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model of scattering by charged dislocations. The mechanism of this scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. It was found that in the low carrier concentration region (

We investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence was observed at 3.40 eV from the GaN on both SiO2/SiC and on SiC. No defect-related yellow luminescence was observed. The refractive index of GaN at 1.96 eV (632.8 nm) was measured at 2.22 and 2.24 for GaN/SiO2/SiC and GaN/SiC, respectively.

This letter addresses the broadening mechanism of the near-band-gap photoluminescence in GaN films doped n type with silicon. The films were produced by plasma assisted molecular beam epitaxy and their carrier concentration was varied systematically from 1015 to 1020 cm−3. The photoluminescence was excited with a 10 mW He–Cd laser at 77 K. At low carrier concentration ( 1018 cm−3) the full width at half maximum increases monotonically with carrier concentration up to about 120 meV. The broadening of the line at high carrier concentration is attributed to tailing of the density of states caused by potential fluctuations due to randomly distributed impurities. The data were quantitatively analyzed, as a function of carrier concentration and compensation ratio, using the impurity band broadening model of Morgan [Phys. Rev. 139, A343 (1965)], and the agreement between model and experim...

A 20.5 period distributed Bragg reflector stack based on AlN/GaN has been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy. Peak reflectance up to 95% was observed at a wavelength of 392.5 nm. Cross-section transmission electron microscopy studies indicate that the interface of GaN-on-AlN is always sharper and more distinct than the interface of AlN-on-GaN. This is attributed to the different growth modes of AlN and GaN. When AlN grows on GaN, it tends to grow in a two-dimensional mode (Frank–van der Merwe mode) whereas GaN grows on AlN in a three-dimensional mode (Stranski–Krastanov mode). Based on these findings, the experimental reflectance data were simulated using the transmission matrix method.