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Spatial distribution of yellow luminescence related deep levels in GaN

Authors :
Hock M. Ng
Julia W. P. Hsu
F. F. Schrey
Source :
Applied Physics Letters. 83:4172-4174
Publication Year :
2003
Publisher :
AIP Publishing, 2003.

Abstract

Using two-photon excitation, we study the excitation power density dependence and spatial variation of photoluminescence (PL) in GaN films grown by molecular beam epitaxy. Under our experimental conditions, the excitation power density dependence is quadratic for near band-gap emission (NBE) and linear for yellow luminescence (YL), consistent with the YL process being saturated. The PL mapping reveals NBE fluctuations at the domain-size scale while YL is uniform. These results provide strong evidence that the spatial distribution of deep levels associated with YL is uniform; hence, YL is unrelated to dislocations.

Details

ISSN :
10773118 and 00036951
Volume :
83
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........7532f323438fdd1104e89ba7f21a7137
Full Text :
https://doi.org/10.1063/1.1628398