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Structural and optical characterization of nonpolar GaN/AlN quantum wells
- Source :
- Applied Physics Letters. 83:653-655
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 20] direction with the [0001] axis lying in the plane of the substrate. The 18-A GaN quantum wells exhibit luminescence at 326 nm, which is in agreement with the transition energy calculated using a flat-band model; that is, without the presence of a built-in electric field.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........133f084a90f2de211494072c8d2a0ad2