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N-doped, Li-doped, and Li–N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMgO. Li doping produces high-resistivity p-type ZnMgO films, whereas N doping produces ZnMgO films with indeterminate carrier type. In contrast, Li–N codoping results in low resistivity and stable p-type ZnMgO films. The enhancement by Li and N coincorporation is investigated by secondary ion mass spectroscopy and is possibly responsible for the good p-type conduction in Li–N dual-acceptor doped Zn0.89Mg0.11O. [ABSTRACT FROM AUTHOR]

A Li–N dual-acceptor doping method has been developed to prepare p-type ZnO thin films by pulsed laser deposition. The lowest room-temperature resistivity is found to be ∼0.93 Ω cm, much lower than that of Li or N monodoped ZnO films. The p-type conductivity of ZnO:(Li,N) films is very reproducible and stable, with acceptable crystal quality. The acceptor activation energy in ZnO:(Li,N) is about 95 meV. ZnO-based homostructural p-n junctions were fabricated by depositing an n-type ZnO:Al layer on a p-type ZnO:(Li,N) layer, confirmed by secondary ion mass spectroscopy. The current-voltage characteristics exhibit their inherent rectifying behaviors. [ABSTRACT FROM AUTHOR]

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm, Hall mobility of 2.65 cm2/V s, and hole concentration of 1.44×1017 cm-3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. [ABSTRACT FROM AUTHOR]

p-type ZnO thin films have been realized by the In–N codoping method. Secondary ion mass spectroscopy revealed that the nitrogen incorporation was enhanced by the presence of indium in ZnO. The as-grown In–N codoped ZnO film shows acceptable p-type behavior at room temperature with high film quality. A conversion from p-type conduction to n type in a range of temperature was confirmed by Hall effect measurement. The lowest reliable room-temperature resistivity was found to be 3.12 Ω cm with a carrier concentration of 2.04×1018 cm-3 and a Hall mobility of 0.979 cm2 V-1 S-1. The p-type behavior is stable. [ABSTRACT FROM AUTHOR]

p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of 0.43 cm2/V s and carrier concentration of 2.25×1017 cm-3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. [ABSTRACT FROM AUTHOR]