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Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method.
- Source :
-
Applied Physics Letters . 5/29/2006, Vol. 88 Issue 22, p222114. 3p. 1 Chart, 6 Graphs. - Publication Year :
- 2006
-
Abstract
- A Li–N dual-acceptor doping method has been developed to prepare p-type ZnO thin films by pulsed laser deposition. The lowest room-temperature resistivity is found to be ∼0.93 Ω cm, much lower than that of Li or N monodoped ZnO films. The p-type conductivity of ZnO:(Li,N) films is very reproducible and stable, with acceptable crystal quality. The acceptor activation energy in ZnO:(Li,N) is about 95 meV. ZnO-based homostructural p-n junctions were fabricated by depositing an n-type ZnO:Al layer on a p-type ZnO:(Li,N) layer, confirmed by secondary ion mass spectroscopy. The current-voltage characteristics exhibit their inherent rectifying behaviors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21124819
- Full Text :
- https://doi.org/10.1063/1.2209191