Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method.

MLA

Lu, J. G., et al. “Low-Resistivity, Stable p-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method.” Applied Physics Letters, vol. 88, no. 22, May 2006, p. 222114. EBSCOhost, https://doi.org/10.1063/1.2209191.

APA

Lu, J. G., Zhang, Y. Z., Ye, Z. Z., Zhu, L. P., Wang, L., Zhao, B. H., & Liang, Q. L. (2006). Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method. Applied Physics Letters, 88(22), 222114. https://doi.org/10.1063/1.2209191

Chicago

Lu, J. G., Y. Z. Zhang, Z. Z. Ye, L. P. Zhu, L. Wang, B. H. Zhao, and Q. L. Liang. 2006. “Low-Resistivity, Stable p-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method.” Applied Physics Letters 88 (22): 222114. doi:10.1063/1.2209191.