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4 results on '"Graphenea"'

1. Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy

Author

Frederik Westergaard Østerberg, Stiven Forti, Clifford McAleese, Kenneth B. K. Teo, Binbin Zhou, Iwona Pasternak, Haofei Shi, Da Luo, Steven Brems, Odile Bezencenet, Camilla Coletti, Cedric Huyghebaert, Pierre Legagneux, Neeraj Mishra, Ben R. Conran, Timothy J. Booth, Bruno Dlubak, Abhay Shivayogimath, Alexandre Jouvray, Amaia Zurutuza, Cunzhi Sun, Birong Luo, Jie Ji, David M. A. Mackenzie, Qian Shen, Wlodek Strupinski, Dirch Hjorth Petersen, Peter Bøggild, Bjarke Sørensen Jessen, Ilargi Napal, Peter Uhd Jepsen, Alba Centeno, Patrick Rebsdorf Whelan, Deping Huang, Meihui Wang, Pierre Seneor, Rodney S. Ruoff, Danmarks Tekniske Universitet (DTU), Thales Research and Technology [Palaiseau], THALES, Center for Nanotechnology Innovation, @NEST (CNI), National Enterprise for nanoScience and nanoTechnology (NEST), Scuola Normale Superiore di Pisa (SNS)-Scuola Universitaria Superiore Sant'Anna [Pisa] (SSSUP)-Istituto Italiano di Tecnologia (IIT)-Consiglio Nazionale delle Ricerche [Pisa] (CNR PISA)-Scuola Normale Superiore di Pisa (SNS)-Scuola Universitaria Superiore Sant'Anna [Pisa] (SSSUP)-Istituto Italiano di Tecnologia (IIT)-Consiglio Nazionale delle Ricerche [Pisa] (CNR PISA), IIT Graphene Labs, Istituto Italiano di Tecnologia (IIT), Nanchang University, Zhejiang University of Technology, Columbia University [New York], Warsaw University of Technology [Warsaw], Vigo System S.A., Aalto University, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Institute for Basic Science (IBS) - Ulsan, CAPRES - A KLA Company, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences (CIGIT), Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS) (CMCM), Ulsan National Institute of Science and Technology (UNIST), AIXTRON SE, IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Graphenea S.A., Virgo System S.A., Thales Research and Technologies [Orsay] (TRT), Technical University of Denmark, Thales, Italian Institute of Technology, Warsaw University of Technology, Department of Electronics and Nanoengineering, Université Paris-Saclay, Tianjin Normal University, Chinese Academy of Sciences, Institute for Basic Science, Aixtron SE, IMEC Vzw, Graphenea, and Aalto-yliopisto

Subjects
large-scale graphene, Materials science, Terahertz radiation, Nanotechnology, 02 engineering and technology, terahertz spectroscopy, 01 natural sciences, law.invention, CVD graphene, law, 0103 physical sciences, General Materials Science, Process optimization, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Spectroscopy, Terahertz time-domain spectroscopy, ComputingMilieux_MISCELLANEOUS, large-scale grapheme, Graphene, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Terahertz spectroscopy and technology, Metrology, Characterization (materials science), CVD grapheme, Mechanics of Materials, 0210 nano-technology, electrical mapping
Abstract

Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the electrical properties of graphene. Here we show several case studies of graphene characterization on a range of different substrates that highlight the versatility of THz-TDS measurements and its relevance for process optimization in graphene production scenarios.

Published
2021
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2. Stabilizing a graphene platform toward discrete components

Author

Alberto Montanaro, Amaia Zurutuza, Stéphane Xavier, Bruno Dlubak, Pierre Seneor, Bernard Servet, Pierre Legagneux, Costel Sorin Cojocaru, Stephan Hofmann, Marie-Blandine Martin, Alba Centeno, Maëlis Piquemal-Banci, John Robertson, Jean-Paul Mazellier, Sana Mzali, Odile Bezencenet, Regina Galceran, Thales Research and Technology [Palaiseau], THALES, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, University of Cambridge [UK] (CAM), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Graphenea S.A., Hofmann, Stephan [0000-0001-6375-1459], and Apollo - University of Cambridge Repository

Subjects
Fabrication, Physics and Astronomy (miscellaneous), Passivation, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 4018 Nanotechnology, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 40 Engineering, [PHYS]Physics [physics], Graphene, Chemistry, Transistor, Doping, Conductance, 021001 nanoscience & nanotechnology, 5104 Condensed Matter Physics, 0104 chemical sciences, 0210 nano-technology, 51 Physical Sciences, Graphene nanoribbons
Abstract

© 2016 Author(s).We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm−2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics.

Published
2016
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3. Graphene field effect transistors on flexible substrate : stable process and high RF performance

Author

Z. Amaia, Alba Centeno, Wei Wei, Henri Happy, Emiliano Pallecchi, Mohamed Belhaj, D. Vignaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, and Graphenea S.A.

Subjects
Materials science, Fabrication, Yield (engineering), 02 engineering and technology, Substrate (electronics), Transistors, 01 natural sciences, 7. Clean energy, law.invention, Stable process, [SPI]Engineering Sciences [physics], law, Radio frequency, 0103 physical sciences, 010302 applied physics, Substrates, Graphene, Oscillation, business.industry, Transistor, Logic gates, 021001 nanoscience & nanotechnology, Kapton, Performance evaluation, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 12 GHz. The high performance transistors with high yield in this work demonstrate the great potential of our full process for flexible GFETs.

Published
2016
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4. Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates

Author

Zurutuza Amaia, Vanessa Avramovic, Stefano Borini, Alba Centeno, Henri Happy, Emiliano Pallecchi, Samiul Haque, Wei Wei, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Chimie et Physique Quantiques (LCPQ), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Graphenea S.A., EU European Commission [604391], French RENATECH network, Renatech Network, European Project: 604391,EC:FP7:ICT,FP7-ICT-2013-FET-F,GRAPHENE(2013), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Carbon - IEMN (CARBON - IEMN), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)

Subjects
010302 applied physics, chemistry.chemical_classification, Materials science, business.industry, Graphene, Bend radius, 02 engineering and technology, Polymer, 021001 nanoscience & nanotechnology, Graphene field effect transistors, Polarization (waves), 01 natural sciences, 7. Clean energy, Flexible electronics, Cutoff frequency, law.invention, [SPI]Engineering Sciences [physics], chemistry, Robustness (computer science), law, 0103 physical sciences, Optoelectronics, General Materials Science, 0210 nano-technology, business
Abstract

International audience; Graphene has been regarded as a promising candidate channel material for flexible devices operating at radio-frequency (RF). In this work we fabricated and fully characterized double bottom-gate graphene field effect transistors on flexible polymer substrates for high frequency applications. We report a record high as-measured current gain cut-off frequency (f(t)) of 39 GHz. The corresponding maximum oscillation frequency (f(max)) is 13.5 GHz. These state of the art high frequency performances are stable against bending, with a typical variation of around 10%, for a bending radius of up to 12 mm. To demonstrate the reliability of our devices, we performed a fatigue stress test for RF-GFETs which were dynamically bend tested 1000 times at 1 Hz. The devices are mechanically robust, and performances are stable with typical variations of 15%. Finally we investigate thermal dissipation, which is a critical parameter for flexible electronics. We show that at the optimum polarization the normalized power dissipated by the GFETs is about 0.35 mW mu m(-2) and that the substrate temperature is around 200 degree centigrade. At a higher power, irreversible degradations of the performances are observed. Our study on state of the art flexible GFETs demonstrates mechanical robustness and stability upon heating, two important elements to assess the potential of GFETs for flexible electronics.

Published
2016
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