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This paper presents a methodology for analysing two-photon absorption laser testing results in the frequency domain rather than with the classical mapping approach. We experimentally demonstrate, on a 28 nm device, the extraction of subwavelength dimensions from a noisy environment without requiring any synchronization between the test operations and the laser or the scan motion. A model of the experiment is then used to evaluate the impact of different parameters on the capabilities of the technique. [ABSTRACT FROM AUTHOR]

Highlights: [•] We investigate Single-Event Burn-out in SiC power diodes using two photon laser testing. [•] Two-photon absorption at blue wavelength can induce burn-out in SiC diodes. [•] A simple model of laser induced current leading to the failure mechanism is proposed. [Copyright &y& Elsevier]

Four pulsed-laser single-event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems. The optical wavelength and the focused spot size are the primary factors influencing the resultant charge density profile. In the large-area photodiode the transients can be distorted by high charge-injection densities that occur for tightly focused, higher energy optical pulses. When the incident laser-pulse energies are corrected for reflection losses and photon efficiency, with collection depth as a floating parameter (to account for diffusion), the photodiode data for all four devices lie on a single curve. The LM124 response varies with the specific transistor irradiated; similar transient shapes are measured for the different pulse wavelengths, with some deviations in the case of R1. These results reiterate that there is no single, optimum pulsed-laser system for SEE studies; that choice depends on the device to be tested, the intended application of that device, the goals of the test, and availability. For the specific devices evaluated here, any of the four laser systems would be sufficient for most tests. [ABSTRACT FROM AUTHOR]

Linear and two-photon laser testing is used to investigate the single-event latchup sensitive depth of SRAM CY7C1069 embedded in CARMEN satellite experiment. Results are discussed and compared with heavy ion and flight data. [ABSTRACT FROM PUBLISHER]

Abstract: This paper presents a detailed simulation-based analysis of the influence of the laser spot shape and size on the parametric and logical transient errors that can be injected into a digital device. The effect of the impact of a Gaussian laser beam is simulated at the electrical level for different pulse durations. Results illustrate the complex interaction between the electrical function and the laser perturbation, with potential implications for secure circuit design. [Copyright &y& Elsevier]

A detailed study of the in-depth dependence of the laser-beam-induced current (LBIC) technique by sub-bandgap two-photon absorption (TPA) has been carried out in this paper. The strong focal dependence mechanism for TPA has been demonstrated by our studies through comparing the TPA technique with traditional single-photon-absorption-based ones. Dependence of the TPA-induced single-event transient response in linear integrated circuits on depth and position is investigated. Our results illustrate an interesting in-depth resolution for the TPA technique, which enables three-dimensional imaging of charge-collecting volumes through the backside of integrated circuits. [ABSTRACT FROM AUTHOR]

Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 μs. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically. [ABSTRACT FROM AUTHOR]

Abstract: This paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate the effect of a continuous wave laser on a PMOS transistor by taking into account the laser’s parameters (i.e. spot size and location, or power) and the PMOS’ geometry and bias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS. [Copyright &y& Elsevier]

Abstract: This study is driven by the need to improve failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus, it is mandatory to understand the behavior of elementary devices under laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses effects induced by static photoelectric laser stimulation (1064nm) on a 90nm technology metal–oxide–semiconductor (MOS) capacitor. On n-MOS capacitor the laser induces interface traps in the low part of the silicon band-gap, contrary to p-MOS capacitor where it is in the upper half part of the gap. It is also shown that electric stress increases the density of such interface traps. [Copyright &y& Elsevier]