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The article discusses a precise modeling framework for short-channel nanoscale double-gate (DG) and gate-all-around MOSFETs. A wide range of bias voltages from subthreshold to strong inversion are found to be covered by this framework and the drain current calculated by this model using a drift-diffusion transport mechanism are found to be in good agreement with the numerical simulations.

A new model for the drain-current in double-gate metal-oxide-semiconductor (DG-MOS) transistors is presented. Findings reveal the validity of the proposed model in weak and strong inversions.

An analytical model, which was developed for the 3-D electrostatic potential for undoped FinFET by solving the Poisson equation including the mobile-change term, is described.

The article presents about an explicit, analytical charged and capacity models of undoped symmetrical double-gate (DG) MOSFET.

Analytical physically based models for the threshold voltage and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs are developed. These models are found to have good agreement with the numerical simulations.

An analytical solution of two-dimensional Poisson's equation (in cylindrical coordinates) induced with mobile charge was used to derive analytical physically based model for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs. The model for DIBL, subthreshold swing, and threshold voltage rolloff parameters were verified by comparison with 3-D numerical simulations and found to be in close agreement with the numerical simulations.

The analytical expressions of all total capacitances are evaluated by using the analytical and continuous charge model of cylindrical undoped surrounding-gate metal-oxide semiconductor field-effect transistors (MOSFETs). The small-signal parameters have an infinite order of continuity and the modeled capacitances have agreed well with the three-dimensional (3-D) numerical simulations in all operating regimes.

Developments in compact-modeling principles and solutions for nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs are presented and reviewed. Techniques are presented to extend these compact models to the high-frequency regime and to study the main high-frequency parameters and characteristics such as noise.

Developments in compact-modeling principles and solutions for nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs are presented and reviewed. Techniques are presented to extend these compact models to the high-frequency regime and to study the main high-frequency parameters and characteristics such as noise.

An analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages is presented. The model shows good agreement with the numerical exact solution obtained from the new charge control model, which is validated by comparison with three-dimensional numerical simulations.

An important issue for MOSFET modeling is to obtain the right value of the saturation voltage V(sub DSAT) and the usual procedures are blocked by the noise introduced in the derivation steps. An alternative method is developed using Fourier methods involving a noise reduction technique to improve the accuracy of the derivatives.

Occurrence of Lorentzian-like noise component, depending on bias and temperature conditions was observed. General considerations about low-noise high temperature analog circuits are discussed.

A submicrometer RF fully depleted SOI MOSFET macro model is proposed. The model is based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design (CAD) model for the intrinsic device.

The authors present a model for short-channel effects that fit transistor characteristics. Topics include capacitance measurements, contact modeling and channel lengths.

A physically based model for the two-dimensional MESFET is proposed. The model is continuous and valid in all operating regimes and encompasses geometric scaling dependencies of the device parameters. Implemented in the circuit simulator AIM-SPICE, the model is appropriate for designing and simulating low-power multifunctional logic elements that employ the multiple-gate capability of the 2-D MESFET.

The charge sheet approach and an approximate unified expression are applied for obtaining the C(sub infinity)-Continuous dc and charge-conserving models for the fully-depleted SOI MOSFET. The charge-conservative model involves the derivation of the analytical and C(sub infinity)-Continuous equations under quasistatic operation conditions. The fully-depleted SOI MOSFET model is applicable in different signal simulations and switched circuits. The modeling of the transistor involves the mobility degradation and short-channel effects.

An explicit-single piece C(infinity) continuous MOSFET model developed from a surface potential formulation helps simulate the small geometry effects, such as carrier velocity saturation, mobility reduction, channel effects and channel-length modulation in the MOSFETs. The model data agrees well with the measured data. The model-derived dc current values display smooth transitions indicating the improvement of the convergence characteristics during circuit simulation.

A study was conducted to analyze a semi-empirical analytical framework for the DC properties of n- and p-channel polysilicon thin film transistors. The model can be utilized in a SPICE circuit simulator. The influence of temperature and channel length on the short-channel model was also examined. Results indicated that the intrinsic DC model effectively characterized all four regimes of operation. These include subthreshold, leakage and kink.

An exact expression of the threshold voltage, for all channel lengths and drain biases is discovered in the analytical solution of Poisson's equation in the metal oxide semiconductor field effect transistor's (MOSFET's) depletion layer. The solution uses the same procedure as in the recent paper 'Threshold Voltage Model for Deep-Submicrometer MOSFET's.' The analytical solution is not as complicated as that given in the paper.