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Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Authors :
Moldovan, Oana
Iniguez, Benjamin
Jimenez, David
Roig, Jaume
Source :
IEEE Transactions on Electron Devices. Jan, 2007, Vol. 54 Issue 1, p162, 4 p.
Publication Year :
2007

Abstract

The analytical expressions of all total capacitances are evaluated by using the analytical and continuous charge model of cylindrical undoped surrounding-gate metal-oxide semiconductor field-effect transistors (MOSFETs). The small-signal parameters have an infinite order of continuity and the modeled capacitances have agreed well with the three-dimensional (3-D) numerical simulations in all operating regimes.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Electric properties
Semiconductor doping -- Analysis
Numerical analysis
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
1
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.158604233

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