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A Physically-Based C Continuous Model for Accumulation-Mode SOI pMOSFET's

Authors :
Iniguez, Benjamin
Gentinne, Bernard
Dissard, Vincent
Flandre, Denis
Source :
IEEE Transactions on Electron Devices. Dec, 1999, Vol. 46 Issue 12, p2295, 9 p.
Publication Year :
1999

Abstract

The authors present a model for short-channel effects that fit transistor characteristics. Topics include capacitance measurements, contact modeling and channel lengths.

Subjects

Subjects :
Engineering models -- Evaluation
Capacitance meters -- Usage
Transistors -- Models
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
46
Issue :
12
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.59486137

Tools

Authors Abstract Subjects Details