1. Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer
- Author
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Dan-Dan Zhang, Yi Zhao, Yu Bai, Yu Jin, Guohua Xie, Yue-Feng Liu, Jing Feng, Shiyong Liu, Qin Xue, Hong-Bo Sun, and Yu-Qing Zhong
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Analytical chemistry ,Electron spectroscopy ,Anode ,Indium tin oxide ,X-ray photoelectron spectroscopy ,OLED ,Optoelectronics ,Thin film ,business ,Current density ,Layer (electronics) - Abstract
Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer.
- Published
- 2009