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Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer
- Source :
- Applied Physics Letters. 94:223306
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 94
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........fb76533a28feebf7569bc81cf04ba47f