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Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer.
- Source :
- Applied Physics Letters; 6/1/2009, Vol. 94 Issue 22, p223306, 3p, 1 Diagram, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- Hole injection improvement in organic light-emitting devices with Fe<subscript>3</subscript>O<subscript>4</subscript> as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe<subscript>3</subscript>O<subscript>4</subscript>/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe<subscript>3</subscript>O<subscript>4</subscript> thin film between the ITO and hole-transporting layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 41139466
- Full Text :
- https://doi.org/10.1063/1.3148657