1. 14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing
- Author
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Michael Roberge, Darren L. Anand, Z. Chbili, L. Jiang, Balaji Jayaraman, Rajesh R. Tummuru, Edmund Banghart, Dan Moy, Toshiaki Kirihata, Matthew Deming, Robert Katz, John A. Fifield, Kevin Batson, Ramesh Raghavan, Faraz Khan, Dale Pontius, Amit Mishra, Alberto Cestero, Norman Robson, Eric D. Hunt-Schroeder, and Mark Jacunski
- Subjects
Adder ,Computer science ,business.industry ,Transistor ,Electrical engineering ,Hardware_PERFORMANCEANDRELIABILITY ,law.invention ,Trap (computing) ,law ,Current sense amplifier ,Hardware_INTEGRATEDCIRCUITS ,Bit error rate ,Timer ,Electrical and Electronic Engineering ,Data retention ,business ,Voltage - Abstract
An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, enabling writes and reads at military grade temperatures. A differential current sense amplifier with self-biased margining circuitry enables programming the OTPM twin cell with known repeatable margin across process–voltage–temperature. Hardware qualification certifies the OTPM to a 10-year 105 °C data retention specification and
- Published
- 2018