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A Compact eFUSE Programmable Array Memory for SOI CMOS
- Source :
- 2007 IEEE Symposium on VLSI Circuits.
- Publication Year :
- 2007
- Publisher :
- IEEE, 2007.
-
Abstract
- Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented using a 6.2 mum2 NiSix silicide electromigration ITIR cell in 65 nm SOI CMOS. A 20 mus programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.
Details
- Database :
- OpenAIRE
- Journal :
- 2007 IEEE Symposium on VLSI Circuits
- Accession number :
- edsair.doi...........927cff597c5e4d9be2ceed644a5c3158