A 0.13 μm logic-based embedded DRAM technology with electrical fuses, Cu interconnect in SiLK/sup TM/, sub-7 ns random access time and its extension to the 0.10 μm generation

Embedded DRAM (eDRAM) has been fabricated successfully with 0.13 /spl mu/m technology for the first time using Cu interconnects and low-/spl kappa/ SiLK/sup TM/ dielectric. Sub-7 ns random access time has been achieved. Extension of the technology to 0.10 /spl mu/m and electrical fuse (eFuse) implementation for flexible redundancy are also described.