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A 0.13 μm logic-based embedded DRAM technology with electrical fuses, Cu interconnect in SiLK/sup TM/, sub-7 ns random access time and its extension to the 0.10 μm generation
- Source :
- International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Embedded DRAM (eDRAM) has been fabricated successfully with 0.13 /spl mu/m technology for the first time using Cu interconnects and low-/spl kappa/ SiLK/sup TM/ dielectric. Sub-7 ns random access time has been achieved. Extension of the technology to 0.10 /spl mu/m and electrical fuse (eFuse) implementation for flexible redundancy are also described.
Details
- Database :
- OpenAIRE
- Journal :
- International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
- Accession number :
- edsair.doi...........db25d537023a8e09fd557deb7a2a1a0f