1. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
- Author
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Renu Sharma, J. M. Osorio Guillen, Frank J. Owens, Rajeev Ahuja, Amita Gupta, Parmanand Sharma, Börje Johansson, K. V. Rao, and G. A. Gehring
- Subjects
Materials science ,Condensed matter physics ,Spintronics ,Silicon ,Condensed Matter::Other ,business.industry ,Mechanical Engineering ,chemistry.chemical_element ,General Chemistry ,Magnetic semiconductor ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Smart material ,Condensed Matter::Materials Science ,Semiconductor ,Ferromagnetism ,chemistry ,Mechanics of Materials ,Condensed Matter::Strongly Correlated Electrons ,General Materials Science ,Mn doped ,Thin film ,business - Abstract
The search for ferromagnetism above room temperature in dilute magnetic semiconductors has been intense in recent years. We report the first observations of ferromagnetism above room temperature for dilute (4 at.%) Mn-doped ZnO. The Mn is found to carry an average magnetic moment of 0.16 mu(B) per ion. Our ab initio calculations find a valance state of Mn(2+) and that the magnetic moments are ordered ferromagnetically, consistent with the experimental findings. We have obtained room-temperature ferromagnetic ordering in bulk pellets, in transparent films 2-3 microm thick, and in the powder form of the same material. The unique feature of our sample preparation was the low-temperature processing. When standard high-temperature (T700 degrees C) methods were used, samples were found to exhibit clustering and were not ferromagnetic at room temperature. This capability to fabricate ferromagnetic Mn-doped ZnO semiconductors promises new spintronic devices as well as magneto-optic components.
- Published
- 2003
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