Spin polarized tunneling in a ferromagnetic Zener diode

Calculations of the tunneling current as a function of voltage for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the voltage and of the magnetization on each side of the diode. The tunneling magnetoresistance is analyzed. Two cases are considered, one that corresponds to Mn doped GaAs in which the ferromagnetism is stronger on the p side of the diode and the other that corresponds to ZnO where there are likely to be many more carriers on the n side of the diode.