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13 results on '"Cunge, Gilles"'

1. Surface and plasma characterization of a self-limited two step etch process for SiN spacer etching applications

Author

Loubet, Nicolas, Petit-Etienne, Camille, Jenny, Cécile, Cunge, Gilles, Pargon, Erwine, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), STMicroelectronics [Crolles] (ST-CROLLES), and Clot, Marielle

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2021

2. Top-coats for scalable nano-manufacturing with high-χ block copolymers in lithographic applications

Author

Chevalier, Xavier, Gomes correia, Cindy, POUND-LANA, Gwenaelle, Bézard, Philippe, SÉRÉGÉ, Matthieu, PETIT-ETIENNE, Camille, Gay, Guillaume, Cunge, Gilles, CABANNES-BOUÉ, Benjamin, Nicolet, Célia, Navarro, Christophe, Cayrefourcq, Ian, Müller, Marcus, Hadziioannou, Georges, Iliopoulos, Ilias, Fleury, Guillaume, Gomez Correia, Cindy, Zelsmann, M., Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie des Polymères Organiques (LCPO), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), and Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Planarity testing, chemistry, Stack (abstract data type), 0103 physical sciences, Scalability, Copolymer, Lamellar structure, 0210 nano-technology, Lithography, ComputingMilieux_MISCELLANEOUS, Nano manufacturing
Abstract

Results for the self-assembly of lamellar silicon-containing high-χ block copolymers (BCP) with innovative neutral top-coat design are presented. We demonstrate that these materials and associated processes are compatible with a standard lithographic process, and oriented toward a potential high volume manufacturing. We show that this dedicated technology is able to guarantee the stability and planarity of the stack even at elevated self-assembly bake temperatures, and opens new opportunity in the fields of 3D BCPs stacks. Finally, we show interesting results for the etch-transfer of a lamellar BCP in silicon.

Published
2021
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3. Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes

Author

Martirosyan, Vahagn, Despiau-Pujo, Emilie, Dubois, Jérôme, Cunge, Gilles, Joubert, Olivier, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Clot, Marielle

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2018

4. Effective patterning and cleaning of graphene by plasma etching and block copolymer lithography for nanoribbons fabrication

Author

Arias-Zapata, Javier, FERRAH, Djawhar, Mehedi, Hasan-Al, Cunge, Gilles, Zelsmann, Marc, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Clot, Marielle

Subjects
[PHYS]Physics [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

5. Diagnostics in pulsed hydrogen plasmas

Author

Dubois, Jerome, Cunge, Gilles, Darnon, Maxime, Posseme, Nicolas, Vallier, Laurent, Joubert, Olivier, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université Joseph Fourier - Grenoble 1 (UJF)-Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and Darnon, Maxime

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

6. Diagnostics of Pulsed Hydrogen Plasmas

Author

Dubois, Jerome, Cunge, Gilles, Joubert, Olivier, Darnon, Maxime, Vallier, Laurent, Posseme, Nicolas, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Darnon, Maxime

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

7. Producing ion waves from acoustic pressure waves in pulsed inductive plasmas

Author

Despiau-Pujo, Emilie, Cunge, Gilles, Darnon, Maxime, Sadeghi, Nader, Braithwaite, Nicholas, Laboratoire des technologies de la microélectronique (LTM), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Neutral depletion is an important phenomenon in CW high-density plasmas, mostly caused by gas heating - with a small contribution due to electron pressure Pe - under typical material processing conditions. In pulsed ICP, neutral depletion plays an important role on radical transport in the afterglow. At the beginning of the afterglow, Pe drops rapidly (10 μs) by electron cooling and the gas cools down as well. It generates a neutral pressure gradient between the plasma bulk and the reactor walls, which in turn forces the cold surrounding gas to move rapidly towards the center, thus launching an acoustic wave in the reactor. Fast gas displacement is evidenced by measuring Al atoms drift velocity in the early afterglow of a Cl2/Ar discharge by time-resolved LIF, the acoustic wave in the chamber being observed by mass spectrometry. 2D fluid simulations of Cl2 pulsed ICP predict similar results. These phenomena are further studied during both the plasma ignition and afterglow using modeling and experiments. Strong oscillations are observed both on the Cl2 neutral densities and on the ion flux. As neutrals are pushed towards (or outwards) the chamber walls by the pressure gradient, ions are also pushed in that direction through collisions, as well captured by our ion flux probe.

Published
2014

8. Optical and electrical diagnostics in chlorine based pulsed plasmas of an industrial silicon etching reactor

Author

Sadeghi, Nader, Cunge, Gilles, Darnon, Maxime, Despiau-Pujo, Emilie, Braithwaite, Nicholas St J, Darnon, Maxime, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

9. Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Author

Oehrlein, Gottlieb, Lin, Qinghuang, Zhang, Ying, Archambault, Sophie, Girardot, Cécile, Salaün, Mathieu, Delalande, Michael, Böhme, Sophie, Cunge, Gilles, Pargon, Erwine, Joubert, Olivier, Zelsmann, Marc, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources [Beijing] (NCEPU), North China Electric Power University, Optique et Matériaux (OPTIMA), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Optique et Matériaux (NEEL - OPTIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Plasma etching, Silicon, business.industry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Photoresist, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry, Resist, law, 0103 physical sciences, Optoelectronics, Wafer, Photolithography, 0210 nano-technology, business, Lithography, ComputingMilieux_MISCELLANEOUS, Wetting layer
Abstract

Block CoPolymer (BCP) self-assembly creates periodical patterns with feature sizes eventually below 10 nm. On plain substrates, ordering is only obtained in grains not larger than a few micrometers but self-assembly in trenches of a pattern (using so-called graphoepitaxy technique) can create long-range order between the polymer micro-domains. As a result, such directed self-assembly (DSA) approaches may be used as ultra-high resolution patterning schemes in the microelectronics industry. Due to its ease of processing, a large majority of the lithographic BCP work reported so far concerned polystyreneblock- polymethylmethacrylate (PS-b-PMMA). Researchers show now an increased interest to polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) block copolymers due to its improved resolution. In the present study, typical industry-like photolithography stacks are patterned by combining graphoepitaxy with cylindrical PS-b-PDMS BCP and state of the art plasma etching technologies. The industry like photolithography stack is fabricated on 300 mm diameter silicon wafers, and composed of three layers: Spin-On-Carbon (SOC), Siliconcontaining Anti-Reflective Coating (SiARC) and 193 nm photolithography resist. About 60 nm deep trenches are first patterned by plasma etching in the SiARC/SOC stack using the 193 nm photolithography resist mask. These trenches are then used to confine the BCP and guide the self-assembly of horizontal PDMS cylinders. Wetting conditions allows avoiding the interfacial PDMS wetting layer at the bottom and lateral interfaces after the solvent annealing step. Finally, dedicated pulsed plasma etching conditions were developed in order to reveal the BCP patterns, transfer them into the remaining SOC layer under the trenches and finally into the underlying silicon substrate. 15 nm half-pitch dense line/space features are formed with a height up to 105 nm. In conclusion, long-range order line/space features could be produced by using horizontal cylindrical high Flory- Huggins parameter (χ) BCPs combined with industry-type photolithography stacks.

Published
2014
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10. 2D fluid simulations of acoustic waves in pulsed ICP discharges: Comparison with experiments

Author

Despiau-Pujo, Emilie, Cunge, Gilles, Sadeghi, Nader, Braithwaite, N. St. J., Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Beguier, Serge, LAsers, Molécules et Environnement (LAME-LIPhy), Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères] (LIPhy), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Clot, Marielle

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], Physics::Plasma Physics, [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Neutral depletion, which is mostly caused by gas heating under typical material processing conditions, is an important phenomenon in high-density plasmas. In low pressure pulsed discharges, experiments show that additional depletion due to electron pressure (Pe) may have a non-negligible influence on radical transport [1]. To evaluate this effect, comparisons between 2D fluid simulations and measurements of gas convection in Ar/Cl2 pulsed ICP plasmas are reported. In the afterglow, Pe drops rapidly by electron cooling which generates a neutral pressure gradient between the plasma bulk and the reactor walls. This in turn forces the cold surrounding gas to move rapidly towards the center, thus launching an acoustic wave in the reactor. Time-resolved measurements of atoms drift velocity and gas temperature by LIF and LAS in the early afterglow are consistent with gas drifting at acoustic wave velocity followed by rapid gas cooling. Similar results are predicted by the model. The ion flux at the reactor walls is also shown to oscillate in phase with the acoustic wave due to ion-neutral friction forces. Finally, during plasma ignition, experiments show opposite phenomena when Pe rises.[4pt] [1] Cunge et al, APL 96, 131501 (2010)

Published
2012

11. Challenges related to linewidth roughness

Author

Pargon, Erwine, Azarnouch, Laurent, Menguelti, Kevin, Fouchier, Marc, Brihoum, Melisa, Ramos, Raphael, Tiron, Raluca, Joubert, Olivier, Vérove, Christophe, Posseme, Nicolas, Vallier, Laurent, Cunge, Gilles, Darnon, Maxime, Banna, Samer, Lill, Torsten, Darnon, Maxime, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Applied Materials, Santa Clara, and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2012

12. 'Plasma/reactor walls interactions in advanced gate etching processes'

Author

Cunge, Gilles, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), and Boussey, Jumana

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2007

13. Mass spectrometry studies of resist-trimming processes in HBr/O2 and Cl2/O2 chemistries

Author

Pargon, Erwine, Joubert, Olivier, Chevolleau, Thierry, Cunge, Gilles, Xu, Songlin, Lill, Thorsten, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Mattson Technology, and Applied Materials, Santa Clara

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience; In a previous article, a parametric study of HBr/O2 and Cl2/O2 resist trimming processes correlated to x-ray photoelectron spectroscopy (XPS) analyses has been performed. The present article confirms the preliminary results obtained by XPS. Mass spectrometry experiments have established that the slow resist erosion rate measured in Cl2/O2 trim chemistries is attributed to a competitive etching of the resist by atomic chlorine and oxygen, while in HBr/O2 trim chemistries, atomic oxygen is the main etching species, bromine playing only a minor role. The etching of the resist by the oxygen species originating from the dissociation of HBr/O2 and Cl2/O2 plasmas generates the formation of volatile resist-etch-by-products such as CO and CO2 , while the etching of the resist by halogen (bromine or chlorine) generates less volatile and heavier resist-etch-by-products such as CxHyBrz with bromine and CxHyClz with chlorine. Mass spectrometry has also shown that plasma conditions leading to a higher concentration of halogen-resist-etch-by-products in the plasma gas phase are also the conditions inducing the lower trim rates. This confirms the assumption that the deposition of heavy resist-etch-by-products on the resist sidewalls controls the trim rates.

Published
2005
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