Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes

Authors :: Martirosyan, Vahagn
Despiau-Pujo, Emilie
Dubois, Jérôme
Cunge, Gilles
Joubert, Olivier
Laboratoire des technologies de la microélectronique (LTM )
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Clot, Marielle
Source :: Journal of Vacuum Science and Technology A, Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (4), pp.041301, Journal of Vacuum Science & Technology A, Journal of Vacuum Science & Technology A, 2018, 36 (4), pp.041301
Publication Year :: 2018
Publisher :: HAL CCSD, 2018.
Abstract: International audience

Subjects :: [PHYS]Physics [physics]
ComputingMilieux_MISCELLANEOUS
[PHYS] Physics [physics]

Language :: English
ISSN :: 07342101
Database :: OpenAIRE
Journal :: Journal of Vacuum Science and Technology A, Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (4), pp.041301, Journal of Vacuum Science & Technology A, Journal of Vacuum Science & Technology A, 2018, 36 (4), pp.041301
Accession number :: edsair.dedup.wf.001..79d1aa516a793809a7e5c1b45ee7692d

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