1. GaN/AlGaN nanostructures for intersubband optoelectronics
- Author
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Laurent Nevou, P. K. Kandaswamy, Maria Tchernycheva, F. H. Julien, Eva Monroy, Alon Vardi, Gad Bahir, A. Wirthmüller, Samuel E. Schacham, Juliette Mangeney, and H. Macchadani
- Subjects
Absorption spectroscopy ,Photodetector ,Gallium nitride ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,Optical switch ,chemistry.chemical_compound ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,Quantum well ,010302 applied physics ,Chemistry ,business.industry ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Wavelength ,Quantum dot ,Excited state ,Optoelectronics ,0210 nano-technology ,business - Abstract
We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17 × 17 μm 2 size provide a frequency response above 10 GHz at 1.5 μm wavelength.
- Published
- 2010