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Surface recombination velocity of anodic sulfide and ZnS coated p‐HgCdTe
- Source :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:464-468
- Publication Year :
- 1989
- Publisher :
- American Vacuum Society, 1989.
-
Abstract
- The surface recombination velocity s has been determined for Hg1−xCdxTe (x∼0.2) for two different surface passivations: (i) anodic sulfide with an overcoating of ZnS and (ii) ZnS coating on freshly etched samples. The method used was photoelectromagnetic effect, in which a magnetic field is applied perpendicular to the diffusion current of optically generated injected carriers. Analysis of the magnetic field dependence of the resulting current can yield s, as well as carrier mobility, lifetime, etc. The temperature dependence of s is very similar for the two passivations at temperatures higher than 50 K, and is increasing with decreasing temperature. At low temperatures s continues to rise for ZnS passivation and stays flat for the native anodic sulfide. Two activation energies are determined: 12.5±1.5 meV at temperatures higher than 60 K, and 2.3±0.2 meV at temperatures lower than 30 K. The high‐temperature activation energy is identical for both passivations. It is concluded that the same surface traps control the surface recombination rate for the two passivations, and their concentration is equal in both cases. The traps are apparently ‘‘intrinsic,’’ and can be related to lattice defects, most probably vacancies. Their concentration at the surface is similar to that in the bulk.
- Subjects :
- chemistry.chemical_classification
Electron mobility
Materials science
Passivation
Sulfide
Inorganic chemistry
Analytical chemistry
Surfaces and Interfaces
Activation energy
Condensed Matter Physics
Surfaces, Coatings and Films
chemistry
Hall effect
Charge carrier
Diffusion current
Deposition (law)
Subjects
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi...........0fa2f7cca4621e92c99c52faf029f39a