Three‐dimensional excess carrier distribution in semiconductor imaging arrays

The distribution of excess carriers in the three dimensions of a semiconductor in closely packed sensing arrays is analytically derived using a novel three‐dimensional simulation. In addition to the introduction of lateral transport, the results show significant deviation from the distribution obtained out of the one‐dimensional model, both in magnitude and gradients. Thus, the net flow of carriers is drastically different than previously predicted. The technical implications of the exact three‐dimensional distribution on quantum efficiency and crosstalk is visualized. The effects of physical parameters such as absorption coefficient,diffusion length, array geometry, and detector structure are thoroughly investigated.