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Intestinal organoids capture essential features of the intestinal epithelium such as crypt folding, cellular compartmentalization and collective movements. Each of these processes and their coordination require patterned forces that are at present unknown. Here we map three-dimensional cellular forces in mouse intestinal organoids grown on soft hydrogels. We show that these organoids exhibit a non-monotonic stress distribution that defines mechanical and functional compartments. The stem cell compartment pushes the extracellular matrix and folds through apical constriction, whereas the transit amplifying zone pulls the extracellular matrix and elongates through basal constriction. The size of the stem cell compartment depends on the extracellular-matrix stiffness and endogenous cellular forces. Computational modelling reveals that crypt shape and force distribution rely on cell surface tensions following cortical actomyosin density. Finally, cells are pulled out of the crypt along a gradient of increasing tension. Our study unveils how patterned forces enable compartmentalization, folding and collective migration in the intestinal epithelium.

International audience; Because of their innocuity, Au nanowires present an interesting field of applications in biology and, particularly, in cancer therapy. Since their morphology and distribution can greatly affect their performances, being able to control their mode of growth is important. Various elaboration techniques including “top-down” and “bottom-up” approaches have been developed. In this work, we propose an efficient maskless method to grow Au nanowires with the help of hydrogen plasma treatment of Au thin films. We have been able to grow Au nanowires by taking advantage of spinodal dewetting of an Au thin film and the supply of silicon radicals resulting from hydrogen plasma etching of amorphous silicon coating the walls of the reactor. A variety of techniques have been applied to study the microstructure and the optical properties of Au nanowires. A strong photothermal effect of Au nanowires has been demonstrated with the help of visible laser light. In order to study the nanowire growth, the transport of Au atoms is discussed, and a growth mechanism is proposed.

We report on the growth of Sn-catalyzed GeSn nanowires (NWs) having a GeSn core and a c-Ge shell in the presence of germane plasma at substrate temperatures (TS) below the GeSn eutectic temperature (TE), containing an exceptional Sn concentration of 30 at. % in their core. The differences between the NWs produced at TS above and below TE of the GeSn alloy are highlighted. Two types of NW growth process are identified: the previously reported in-plane solid–liquid–solid (IPSLS) process for TS ≥ TE and a plasma-assisted IPSLS (PA-IPSLS) method taking place at TS < TE; the crucial role of plasma in providing the energy necessary to melt the Sn catalyst at substrate temperatures lower than TE is discussed. The thermal activation window for each method is determined. The PA-IPSLS process is shown to provide an efficient strategy for the growth of crystalline GeSn NWs with a high Sn incorporation in a growth duration of less than 3 min.

Blood vessel formation generates unique vascular patterns in each individual. The principles governing the apparent stochasticity of this process remain to be elucidated. Using mathematical methods, we find that the transition between two fundamental vascular morphogenetic programs – sprouting angiogenesis and vascular remodeling – is established by a shift on collective front-rear polarity of endothelial cells. We demonstrate that the competition between biochemical (VEGFA) and mechanical (blood flow-induced shear stress) cues controls this collective polarity shift. Shear stress increases tension at focal adhesions overriding VEGFA-driven collective polarization, which relies on tension at adherens junctions. We propose that vascular morphogenetic cues compete to regulate individual cell polarity and migration through tension shifts that translates into tissue-level emergent behaviors, ultimately leading to uniquely organized vascular patterns.

International audience; The vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth mechanisms are widely used to obtain silicon nanowires. In this paper, we report on a hybrid method based on the use of a dual-phase catalyst made of liquid Sn and solid Cu 3 Si, which results in a liquid-assisted VSS (LA-VSS) mechanism. The silicon atoms are brought by atomic hydrogen-assisted dissociation of silane molecules. We observe the growth in situ, in the transmission electron microscope, at

As cells migrate and experience forces from their surroundings, they constantly undergo mechanical deformations which reshape their plasma membrane (PM). To maintain homeostasis, cells need to detect and restore such changes, not only in terms of overall PM area and tension as previously described, but also in terms of local, nano-scale topography. Here we describe a novel phenomenon, by which cells sense and restore mechanically induced PM nano-scale deformations. We show that cell stretch and subsequent compression reshape the PM in a way that generates local membrane evaginations in the 100 nm scale. These evaginations are recognized by the I-BAR protein IRSp53, which triggers a burst of actin polymerization mediated by Rac1 and Arp2/3. The actin polymerization burst subsequently re-flattens the evagination, completing the mechanochemical feedback loop. Our results demonstrate a new mechanosensing mechanism for PM shape homeostasis, with potential applicability in different physiological scenarios.TeaserCell stretch cycles generate PM evaginations of ≈100 nm which are sensed by IRSp53, triggering a local event of actin polymerization that flattens and recovers PM shape.

SUMMARYAdherens junctions allow cell contact to inhibit epithelial migration. But a long-standing puzzle is how locomotion is downregulated when E-cadherin adhesions form at surfaces perpendicular, but not those parallel, to the direction of migration. We now show that this arises from coupling between E-cadherin adhesions and the retrograde cortical flows of leader cells in migrating epithelia. At interfaces perpendicular to the direction of motion, such flows are antiparallel, which generates a tensile signal that induces the actin-binding domain of α-catenin to promote lateral growth of nascent adhesions and inhibit the lamellipodial activity necessary for migration. At interfaces parallel to the direction of motion, by contrast, cortical flows are aligned and no such mechanical inhibition takes place. Therefore, α-catenin mechanosensitivity in the clutch between E-cadherin and cortical F-actin allows cells to interpret the direction of motion via cortical flows and trigger the first signal for contact to inhibit locomotion.

Mechanical force controls fundamental cellular processes in health and disease, and increasing evidence shows that the nucleus both experiences and senses applied forces. Here we show that nuclear forces differentially control passive and facilitated nucleocytoplasmic transport, setting the rules for the mechanosensitivity of shuttling proteins. We demonstrate that nuclear force increases permeability across nuclear pore complexes, with a dependence on molecular weight that is stronger for passive than facilitated diffusion. Due to this differential effect, force leads to the translocation into or out of the nucleus of cargoes within a given range of molecular weight and affinity for nuclear transport receptors. Further, we show that the mechanosensitivity of several transcriptional regulators can be both explained by this mechanism, and engineered exogenously by introducing appropriate nuclear localization signals. Our work sets a novel framework to understand mechanically induced signalling, with potential general applicability across signalling pathways and pathophysiological scenarios.One sentence summaryForce application to the nucleus leads to nuclear accumulation of proteins by differentially affecting passive versus facilitated nucleocytoplasmic transport.

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Flexibility and power-to-weight (PTW) ratio are the key factors for promoting wearable or portable solar cell applications. Planar hydrogenated amorphous silicon (a-Si:H) thin films deposited directly on soft aluminum foils (AF) are usually subject to easy cracking and delamination due to the mechanical instability on AF surface. Here, an exceptionally robust three-dimensional (3D) construction of a-Si:H radial p-i-n junction solar cells on soft supermarket-available AF of 15 µm thick is reported, where the discrete and firmly standing Si nanowire (SiNW) cores, grown and rooted on the soft AF surface, frame up a 3D architecture that protects the protrusive photo-active radial junctions from the unstable a-Si/Al bottom layer. An excellent flexibility and integrity of the 3D a-Si:H radial junctions have been achieved, even under bending to radius of 5 mm. Remarkably, without any diffusion barrier protection, a power conversion efficiency of 5.6% has been recorded, with an open-circuit voltage of 0.71 V and photo-current density of 14.2 mA/cm2, leading to a high PTW ratio of > 1300 W/kg. Importantly, the overall fabrication cost can be largely slashed off, by ~46% compared to conventional a-Si:H solar cells, as the need for a bottom TCO contact/texturing layer, for a back-reflection coating and for a glass/polymer substrate are all exempted.

Producción Científica, Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2-5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by low-temperature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations, ...), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented., Ministerio de Ciencia, Innovación y Universidades (project RTI2018-094291-B-I00), Comunidad de Madrid (project S2018/EMT-4308), Ministerio de Ciencia e Innovación (grant PRE2019-088437), Junta de Castilla y León - Fondo Europeo de Desarrollo Regional (project VA283P18)

Intestinal organoids capture essential features of the intestinal epithelium such as folding of the crypt, spatial compartmentalization of different cell types, and cellular movements from crypt to villus-like domains. Each of these processes and their coordination in time and space requires patterned physical forces that are currently unknown. Here we map the three-dimensional cell-ECM and cell-cell forces in mouse intestinal organoids grown on soft hydrogels. We show that these organoids exhibit a non-monotonic stress distribution that defines mechanical and functional compartments. The stem cell compartment pushes the ECM and folds through apical constriction, whereas the transit amplifying zone pulls the ECM and elongates through basal constriction. Tension measurements establish that the transit amplifying zone isolates mechanically the stem cell compartment and the villus-like domain. A 3D vertex model shows that the shape and force distribution of the crypt can be largely explained by cell surface tensions following the measured apical and basal actomyosin density. Finally, we show that cells are pulled out of the crypt along a gradient of increasing tension, rather than pushed by a compressive stress downstream of mitotic pressure as previously assumed. Our study unveils how patterned forces enable folding and collective migration in the intestinal crypt.

Silicon thin film technology has been driven by hydrogenated amorphous and microcrystalline silicon thin films which are routinely produced using silane plasmas. While SiH 3 is often considered as the main radical for the obtaining of such films, we have shown that changing the process to conditions where silicon clusters and nanocrystals are produced in the plasma can lead to high deposition rates and improved materials, such as hydrogenated polymorphous silicon and polycrystalline silicon [1]. Moreover, by changing the substrate from glass to crystalline silicon, it is possible to produce epitaxial crystalline silicon films (c-Si:H) which can be transferred to foreign substrates to make ultrathin crystalline silicon solar cells [2], [3]. Interestingly enough the structure of these films is found to be tetragonal, indicative of their particular growth process [4]. Even more interesting, this low temperature epitaxial process can be extended to doped films as well as to germanium and SiGe alloys and their heteroepitaxial growth on GaAs [5]. Last but not least, combining PECVD with low melting temperature metal nanoparticles such as indium and tin opens the way to the growth of nanowires (including Ge, Si and GeSn), which allow to achieve efficient light trapping and carrier collection in radial junction solar cells [6] or even to growth in-plane c-Si nanowires for stretchable electronics and photonics applications [7], [8].

Transmission electron microscopy (TEM) techniques can provide a complementary understanding of the physico-chemical mechanisms of the growth and the annealing behavior of boron-doped hydrogenated silicon epitaxial films grown at low temperatures (

Modulated Photoluminescence (MPL) is a powerful tool for measuring the minority carrier lifetime of solar cells. An in house in situ MPL equipped Plasma Enhanced Chemical Vapor Deposition reactor enables the monitoring of passivation properties of solar cells during the fabrication steps of devices. In this study, this tool was used to analyze the impact of annealing steps on passivation properties. First, samples passivated by an aluminum oxide layer were annealed and the evolution of the effective lifetime in the wafer was studied. This allowed to optimize the temperature and duration of the heat treatment. A similar study was made on Fired Passivating Contacts with a passivating stack of SiO x /(p) $\mu\mathrm{c}$ -Si:H/SiN x :H. An interesting low-lifetime regime is consistently observed when the samples undergo a high temperature ( $\mathrm{T} > 350^{\circ}\mathrm{C}$ ) annealing step, followed by a lifetime recovery during the subsequent cooling step. Corona charge and TEM images allowed to get a deeper understanding of the passivation mechanisms evidenced during in situ MPL measurements.

Background & Aims Liver stiffness is increased in advanced chronic liver disease (ACLD) and accurately predicts prognosis in this population. Recent data suggest that extracellular matrix stiffness per se may modulate the phenotype of liver cells. We aimed at investigating the effect of matrix stiffness on the phenotype of liver cells of rats with cirrhosis, assessing its influence on their response to antifibrotic strategies and evaluating associated molecular mechanisms. Methods Hepatocytes, hepatic stellate cells, and liver sinusoidal endothelial cells were isolated from healthy rats or rats with cirrhosis (carbon tetrachloride or thioacetamide), and cultured on polyacrylamide gels with different physiologically relevant stiffness for 72 h. Results All cell types of rats with cirrhosis cultured at low stiffness showed a significant phenotype amelioration vs. rigid matrix (assessed by quantitative morphology, mRNA expression, protein synthesis, and electron microscopy imaging). Additionally, stiffness modified the antifibrotic effects of liraglutide in stellate cells of rats with cirrhosis. Finally, evaluation of nuclear morphology revealed that high stiffness induced nuclei deformation in all cell types, an observation confirmed in cells from human livers. Disconnecting the nucleus from the cytoskeleton by cytoskeleton disruption or a defective form of nesprin 1 significantly recovered spherical nuclear shape and quiescent phenotype of cells. Conclusions The environment's stiffness per se modulates the phenotype of healthy rats and liver cells of rats with cirrhosis by altering the nuclear morphology through cytoskeleton-derived mechanical forces. The reversibility of this mechanism suggests that targeting the stiffness-mediated intracellular mechanical tensions may represent a novel therapeutic strategy for ACLD. Lay summary During cirrhosis, the liver becomes scarred, stiff, and unable to perform its normal functions efficiently. In this study, we demonstrated that cells from diseased (stiff) livers recovered their functionality when placed in a soft environment (as that of a healthy liver). Furthermore, treatments aimed at tricking liver cells into believing they are in a healthy, soft liver improved their function and could potentially contribute to treat cirrhosis., Graphical abstract, Highlights • Low stiffness directly improves the phenotype of hepatocytes, hepatic stellate cells, and liver sinusoidal endothelial cells. • Stiffness modulates sinusoidal crosstalk in advanced chronic liver disease (ACLD). • Stiffness may determine the efficacy of antifibrotic strategies. • Mechanical forces applied to the nucleus through the LINC complex mediate the effects of stiffness on liver cell phenotype.

Germanium quantum dots (GeQDs), addressed by self-aligned and epitaxial silicon nanowires (SiNWs) as electrodes, represent the most fundamental and the smallest units that can be integrated into Si optoelectronics for 1550 nm wavelength detection. In this work, individual GeQD photodetectors have been fabricated based on a low temperature self-condensation of uniform amorphous Si (a-Si)/a-Ge bilayers at 300 °C, led by rolling indium (In) droplets. Remarkably, the diameter of the GeQD nodes can be independently controlled to achieve wider GeQDs for maximizing infrared absorption with narrower SiNW electrodes to ensure a high quality Ge/Si hetero-epitaxial connection. Importantly, these hetero GeQD/SiNW photodetectors can be deployed into predesigned locations for scalable device fabrication. The photodetectors demonstrate a responsivity of 1.5 mA W−1 and a photoconductive gain exceeding 102 to the communication wavelength signals, which are related to the beneficial type-II Ge/Si alignment, gradient Ge/Si epitaxial transition and a larger QD/NW diameter ratio. These results indicate a new approach to batch-fabricate and integrate GeQDs for ultra-compact Si-compatible photodetection and imaging applications.

International audience; C-AFM and KPFM techniques have been applied to investigate advanced junctions that are currently involved in highly efficient silicon solar cells. Our first study focuses on silicon heterojunctions and notably hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) P/n or N/p heterostructures which band bending at the interface forms a 2D channel. This conductive channel was indeed evidenced for the first time by cross-sectional investigations by C-AFM confirming the analysis of macroscopic planar conductance measurements. A second example of nanoscale characterization concerns the passivating selective contacts consisting in a thin silicon oxide (SiOx) layer between the c-Si and a highly doped polysilicon (poly-Si) layer. The electrical carrier transport is here not limited by the oxide layer and it is assumed that tunnelling through the oxide and/or the presence of pinholes are the main competitive mechanisms. For this specific heterostructure KPFM reveals local surface potential drops of 15-30 mV, which do not exist on samples without SiOx. These potential drops suggest the presence of pinholes that are formed during the poly-Si annealing process performed in the range of 700-900 °C. Finally, in a third study, we concentrate on p-in radial junction (RJ) silicon nanowire (SiNW) devices that are investigated under illumination by KPFM, in the so-called surface photovoltage (SPV) technique. This work focuses on the possibility of extracting the open-circuit voltage (VOC) on single isolated SiNW RJ by local SPV measurements using different AFM tip shapes and illumination directions in order to minimize shadowing effects.

Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiOx), doped polycrystalline silicon (poly-Si) and silicon nitride (SiNx:H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p+) microcrystalline silicon (μc-Si:H). We report on the impact of this deposition step on the SiOx layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiOx\(p+) μc-Si\SiNx:H with no annealing step.

Droplet based micro/nanofluidics has been demonstrated as a versatile tool in a wide range of fields. In particular, seeded growth of planar low-dimensional nanomaterials often relies on crawling metal droplets as catalytic media where nucleation and crystal growth proceed. However, direct observations of nanomaterials growth led by self-propelled droplet transport remain rare, which leaves many open questions on droplet behavior during growth. Here, we report in situ observations of in-plane Si nanowire growth in a transmission electron microscope, where an indium droplet migrates on a silicon nitride membrane coated by a layer of hydrogenated amorphous silicon (a-Si:H), dissolves the a-Si:H coating film on the membrane, and results in the production of a crystalline Si nanowire in its trail. This in situ observation, combined with the geometric investigation of the nanowires, presents nice consistency with de Gennes’ theoretical prediction of reactive wetting induced droplet motion. Interestingly, we recorded a nanoflake-to-nanowire transition when the growth rate was increased by heating the membrane from 350 °C to 400 °C. This work directly unveils rich transport mechanism of catalytic droplets, which are expected to be a new platform for producing diverse low-dimensional nanomaterials and promote their potential applications in nanoscience and technologies.

Germanium–tin alloys have gained strong attention because of their optical and electrical properties and their compatibility with silicon-based technologies. By increasing the Sn content in the alloy, the charge carrier mobility can be improved, and the energy band gap can be transformed from indirect to direct. However, the fabrication of GeSn is a huge challenge as the equilibrium solubility of Sn in Ge is limited to

Geometric and compositional modulations are the principal parameters of control to tailor the band profile in germanium/silicon (Ge/Si) heteronanowires (NWs). This has been achieved mainly by alternating the feeding precursors during a uniaxial growth of Ge/Si NWs. In this work, a self-automated growth of Ge/Si hetero island-chain nanowires (hiNWs), consisting of wider c-Ge islands connected by thinner c-Si chains, has been accomplished via an indium (In) droplet-mediated transformation of uniform amorphous a-Si/a-Ge bilayer thin films. The surface-running In droplet enforces a circulative hydrodynamics in the nanoscale droplet, which can modulate the absorption depth into the amorphous bilayer and enable a single-run growth of a superlattice-like hiNWs without the need for any external manipulation. Meanwhile, the separation and accumulation of electrons and holes in the phase-modulated Ge/Si superlattice leads to a modulated surface potential profile that can be directly resolved by Kelvin probe force microscopy. This simple self-assembly growth and modulation dynamics can help to establish a powerful new concept or strategy to tailor and program the geometric and compositional profiles of more complex hetero nanowire structures, as promising building blocks to develop advanced nanoelectronics or optoelectronics.

We study light trapping in hydrogenated amorphous silicon thin film solar cells fabricated by plasma-enhanced chemical vapor deposition on various nanostructured back reflectors. The back reflectors are patterned using polystyrene assisted lithography. We have investigated the correlation between the back reflector optical properties and the corresponding solar cell performance. We have introduced double size polystyrene sphere patterned back reflectors and have provided experimental evidence for improved light trapping performance compared to single size polystyrene sphere patterned back reflectors. We have achieved high performing nanostructured amorphous silicon solar cells with an initial power conversion efficiency of 7.53% and over 20% enhancement of the short-circuit current compared with the reference flat solar cell.

Significance Tissues are viscoelastic in nature and their physical properties play a fundamental role in development, tumorigenesis, and wound healing. Cell response to matrix elasticity is well understood through a “molecular clutch” which engages when stiffness is sufficiently high to expose binding sites in mechanosensitive proteins. Here we show that cell response to pure viscous surfaces (i.e., with no elastic component) can be explained through the same molecular clutch. Mechanisms used by cells to sense rigidity are more universal and can be used to unveil cell interaction with complex viscoelastic environments. The research presents a tool to understand cells within tissues and in turn opens new avenues to incorporate viscosity into the design of synthetic cellular microenvironments., Cell response to matrix rigidity has been explained by the mechanical properties of the actin-talin-integrin-fibronectin clutch. Here the molecular clutch model is extended to account for cell interactions with purely viscous surfaces (i.e., without an elastic component). Supported lipid bilayers present an idealized and controllable system through which to study this concept. Using lipids of different diffusion coefficients, the mobility (i.e., surface viscosity) of the presented ligands (in this case RGD) was altered by an order of magnitude. Cell size and cytoskeletal organization were proportional to viscosity. Furthermore, there was a higher number of focal adhesions and a higher phosphorylation of FAK on less-mobile (more-viscous) surfaces. Actin retrograde flow, an indicator of the force exerted on surfaces, was also seen to be faster on more mobile surfaces. This has consequential effects on downstream molecules; the mechanosensitive YAP protein localized to the nucleus more on less-mobile (more-viscous) surfaces and differentiation of myoblast cells was enhanced on higher viscosity. This behavior was explained within the framework of the molecular clutch model, with lower viscosity leading to a low force loading rate, preventing the exposure of mechanosensitive proteins, and with a higher viscosity causing a higher force loading rate exposing these sites, activating downstream pathways. Consequently, the understanding of how viscosity (regardless of matrix stiffness) influences cell response adds a further tool to engineer materials that control cell behavior.

Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been established, while high resolution transmission electron microscopy analysis reveals a high quality monolike crystallinity in the line-shaped engineered SiNW springs. Excitingly, in situ scanning electron microscopy stretching and current-voltage characterizations also demonstrate a superelastic and robust electric transport carried by the SiNW springs even under large stretching of more than 200%. We suggest that this highly reliable line-shape programming approach holds a strong promise to extend the mature c-Si technology into the development of a new generation of high performance biofriendly and stretchable electronics.

High power-to-weight ratio (PTWR) is an important figure-of-merit for high performance flexible/portable solar cells. Marrying advanced tandem junction design with three-dimensional (3D) Si nanowire (SiNW) framework enables a promising route to boost the PTWR. In this work, a radial tandem junction (RTJ) thin film solar cell has been demonstrated, for the first time, over SiNWs, which consist of radially deposited p-i-n multilayers with hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon germanium (a-SiGe:H) absorption layers in the outer and the inner junctions, respectively. The strong light trapping within the 3D SiNW framework allows for the use of a very thin a-SiGe:H (~45 nm) absorption layer to harvest efficiently the long wavelengths. The RTJ cells fabricated via a one-pump-down process in a single PECVD chamber, directly upon 15 µm thick aluminum foils demonstrate an excellent flexibility that can bend to 10 mm radius and achieve a record PTWR~1628 W/kg, and accomplish a high open-circuit voltage, filling factor and conversion efficiency of 1.2 V, 61.5% and 8.1% on glass, respectively, substantially improved compared to those accomplished by radial single junction cells. These results highlight the unique potential of 3D radial tandem technology to enable a new generation of high performance and durable flexible photovoltaics.

This study focuses on the electrostatic interaction between the ALD Al2O3 passivation layer and the PECVD a-SiNX:H capping layer, while reducing ALD Al2O3 thickness. The first one embeds negative fixed charges while the second is well known to possess a fixed charge density with an opposite polarity. We reduced the Al2O3 thickness from 20 to 2 nm while keeping constant the a-SiNX:H thickness. To increase the magnitude of the field effect passivation provided by Al2O3, we used an original light-induced field effect enhancement strategy. QSS-PC was used to quantify the initial passivation properties. We monitored the evolution of the passivation quality under low-intensity light-soaking until its stabilization. We report here a minority carrier lifetime enhancement up to 900% and surface recombination velocity reduction below 10 cm.s-1. The evidence of field effect compensation at c-Si surface due to a-SiNX:H positive charges has been supported by numerical simulations (SILVACO ATLAS). While keeping the parameters of the a-SiNX:H layer constant, the configuration of the Al2O3 layer (thickness and fixed charge density) were varied. These results allow us to conclude that in order to use thinner Al2O3 passivation layer (2 nm), ideal capping layer has to be free of positive fixed charges and to release enough hydrogen at desired temperature to ensure the chemical passivation.

We have been able to synthesize directly the tetragonal Si by low temperature plasma-enhanced chemical vapor deposition using hydrogen and silane as the precursor and carrier gas, respectively. With the optimization of growth conditions, a stable tetragonal epitaxial Si can be grown on a crystalline Si substrate at large scale. By combining X-ray diffraction and high resolution transmission electron microscopy measurements, we found that the epitaxial layer has smaller in-plane but larger out-of-plane lattice parameters as compared to the crystalline substrate. The existence of hydrogen platelets in epitaxy is also observed, which affects the diffraction patterns along that direction. We attribute the formation of tetragonal Si to the hydrogenated-cluster-assisted epitaxy. Other possible reasons including host sites of hydrogen atoms and thermal expansion coefficients are also discussed.

Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix, and which can be grown at high deposition rates by increasing the radio-frequency power. When grown at high deposition rates, pm-Si:H films show a shift of their infrared (IR) absorption stretching band peak to higher wavenumbers and a sudden increase in their optical bandgap. The IR absorption spectrum was analyzed by deconvolution into three bands, including a medium stretching mode positioned at 2030 cm−1, which has been attributed to Si–H bonds at silicon nanocrystal surfaces. Secondary ion mass spectrometry measurements confirmed that an excess of hydrogen is incorporated in pm-Si:H grown at high deposition rate, leading to a sharp increase in the optical bandgap. We suggest that this sharp increase can be used as a simple tool to detect the deterioration of material quality when using high deposition rate processes.

// Leire Neri 1 , Marta Lasa 1 , Alberto Elosegui-Artola 2 , Delia D'Avola 3, 4 , Beatriz Carte 1 , Cristina Gazquez 1 , Sara Alve 5 , Pere Roca-Cusachs 2, 6 , Mercedes Inarrairaegui 3, 4 , Jose Herrero 3, 4 , Jesus Prieto 1, 3 , Bruno Sangro 3, 4 and Rafael Aldabe 1, 4 1 Gene Therapy and Regulation of Gene Expression Program, Centro de Investigacion Medica Aplicada, Universidad de Navarra, Pamplona, Spain 2 Institute for Bioengineering of Catalonia, Barcelona, Spain 3 Liver Unit, Clinica Universidad de Navarra, Centro de Investigacion Biomedica en Red en el Area Tematica de Enfermedades Hepaticas y Digestivas (Ciberehd), Pamplona, Spain 4 Instituto de Investigacion Sanitaria de Navarra (IdiSNA), Pamplona, Spain 5 Department of Biology, CBMA-Centre of Molecular and Environmental Biology, University of Minho, Campus de Gualtar, Braga, Portugal 6 University of Barcelona, Barcelona, Spain Correspondence to: Rafael Aldabe, email: raldabe@unav.es Keywords: tropomyosin, CDK2, focal adhesions, cell-cell junctions, cell cycle arrest Received: December 21, 2016 Accepted: April 04, 2017 Published: April 21, 2017 ABSTRACT The identification of new targets for systemic therapy of hepatocellular carcinoma (HCC) is an urgent medical need. Recently, we showed that hNatB catalyzes the N-α-terminal acetylation of 15% of the human proteome and that this action is necessary for proper actin cytoskeleton structure and function. In tumors, cytoskeletal changes influence motility, invasion, survival, cell growth and tumor progression, making the cytoskeleton a very attractive antitumor target. Here, we show that hNatB subunits are upregulated in in over 59% HCC tumors compared to non-tumor tissue and that this upregulation is associated with microscopic vascular invasion. We found that hNatB silencing blocks proliferation and tumor formation in HCC cell lines in association with hampered DNA synthesis and impaired progression through the S and the G2/M phases. Growth inhibition is mediated by the degradation of two hNatB substrates, tropomyosin and CDK2, which occurs when these proteins lack N-α-terminal acetylation. In addition, hNatB inhibition disrupts the actin cytoskeleton, focal adhesions and tight/adherens junctions, abrogating two proliferative signaling pathways, Hippo/YAP and ERK1/2. Therefore, inhibition of NatB activity represents an interesting new approach to treating HCC by blocking cell proliferation and disrupting actin cytoskeleton function.

We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells upon light-soaking. We could monitor in situ, the formation of macroscopic bubbles and holes during current-induced degradation of the same devices using optical microscopy. Forward bias, leading to a current-injection of 300 mA/cm2, was applied to hydrogenated amorphous silicon (a-Si:H) and pm-Si:H PIN solar cells and series of optical images were taken on the same spot at various steps of current-injection. During the current-injection, the pm-Si:H PIN solar cells experience significant topological changes, which we could not detect in a-Si:H PIN solar cells. These effects were further characterized by complementary ex-situ techniques such as SEM, AFM and spectroscopic ellipsometry.

High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm2 V−1 s−1 and an excellent subthreshold swing of only 163 mV dec−1, via a low temperature

Unusual quasi-fivefold symmetric electron diffraction patterns are observed for silicon thin films grown by plasma-enhanced chemical vapour deposition and containing oxygen and carbon impurities in the range of 0.3–5.5%. These films were grown on crystalline (100) silicon wafers using a liquid precursor, hexamethyldisiloxane (HMDSO), mixed with silane, hydrogen and diborane diluted in argon. The occurrence of this quasi-fivefold symmetry is explained by multiple twinning and imperfect epitaxy. A quantitative method performed on the diffraction patterns is developed to evaluate the number of twin operations. This method is also used to discriminate twin positions from random microcrystalline ones in the diffraction patterns and thus to estimate their respective ratios for different growth conditions. Quite remarkably, the random microcrystalline part remains in the range of a few per cent and the diffracted intensities are the sum of two main contributions: multiple (micro-) twinned and amorphous. Increasing the amount of HMDSO decreases the microtwinned part directly to the benefit of the amorphous part with no significant microcrystalline phase. The causes of twinning are presented and discussed by comparing the observations with the literature; dynamical considerations where the system tends to align {111} planes with the growth direction would explain multiple twinning and, in turn, the fivefold symmetry.

Developing new materials with improved thermal stability is very important as far as the passivation and processing of crystalline silicon solar cells is considered. In this work, we studied two types of hydrogenated silicon based materials (hydrogenated amorphous silicon oxide and hydrogenated microcrystalline silicon oxide) and compared them to the well-established hydrogenated amorphous silicon. We demonstrate the thermal robustness of hydrogenated silicon oxide under anodic bonding conditions (250 °C, 1000 V). The microstructural and composition evolution of passivation layers under anodic bonding was characterized by Fourier transform infrared spectroscopy, high resolution transmission electron microscopy, annular dark-field scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy and secondary ion mass spectrometry. We found that oxygen can inhibit the degradation of the passivation quality under anodic bonding by suppressing the localized interfacial crystallization and re-passivating the interface. When applied to thin-film crystalline silicon solar cells, the excellent thermal robustness of hydrogenated microcrystalline silicon oxide allows to keep a good passivation to the ultrathin c-Si absorbers (1 μm).

Epithelial repair and regeneration are driven by collective cell migration and division. Both cellular functions involve tightly controlled mechanical events, but how physical forces regulate cell division in migrating epithelia is largely unknown. Here we show that cells dividing in the migrating zebrafish epicardium exert large cell–extracellular matrix (ECM) forces during cytokinesis. These forces point towards the division axis and are exerted through focal adhesions that connect the cytokinetic ring to the underlying ECM. When subjected to high loading rates, these cytokinetic focal adhesions prevent closure of the contractile ring, leading to multi-nucleation through cytokinetic failure. By combining a clutch model with experiments on substrates of different rigidity, ECM composition and ligand density, we show that failed cytokinesis is triggered by adhesion reinforcement downstream of increased myosin density. The mechanical interaction between the cytokinetic ring and the ECM thus provides a mechanism for the regulation of cell division and polyploidy that may have implications in regeneration and cancer.

Three-dimensional (3D) construction of radial junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells on standing silicon nanowires (SiNWs) is a promising strategy to maximize the light harvesting performance and improve the photocarrier collection in an optimized junction configuration. The unique light in-coupling and absorption behaviour in the antenna-like 3D photonic structures also necessitates a set of new theoretical models and simulation tools to design, predict and optimize the photovoltaic performance of radial junction solar cells, which can be rather different from planar junction solar cells. Recently, the performance of radial junction a-Si:H thin film solar cells has progressed steadily to a level comparable or even superior to that of their planar counterparts, with plenty of room for further improvement. This review will first address the growth strategy and critical parameter control of SiNWs produced via a plasma-assisted low-temperature vapour-liquid-solid procedure using low-melting-point metals as the catalyst. Then, the construction of high-performance radial junction thin film solar cells over the standing SiNW matrix, as well as their optimal structural designs, will be introduced. At the end, the new applications of 3D radial junction units will be summarized, which include, for example, the construction of very flexible, low-cost and efficient a-Si:H solar cells with the highest power-to-weight ratio, the demonstration of highly sensitive solar-blind photodetectors operating at the ultraviolet wavelength spectrum and the development of novel biomimetic radial tandem junction photodetectors with an intrinsic red-green-blue (RGB) colour distinguishing capability.

SummaryThe link between the modulation of integrin activity and cellular mechanosensing of tissue rigidity, especially on different extracellular matrix ligands, remains poorly understood. Here, we find that primary mouse mammary gland stromal fibroblasts (MSFs) are able to spread efficiently on soft collagen-coated substrates, resembling the soft mammary gland tissue. In addition, MSFs generate high forces and display nuclear YAP at a low matrix stiffness, supported by mature focal adhesions, prominent actin stress fibers, and myosin phosphorylation.We describe that loss of the cytosolic integrin inhibitor, SHARPIN, impedes MSF spreading specifically on soft type I collagen but not on fibronectin. Through quantitative experiments and computational modelling, we find that SHARPIN-deficient MSFs display faster force-induced unbinding of adhesions from collagen-coated beads. Faster unbinding, in turn, impairs force transmission in these cells, particularly, at the stiffness optimum observed for wild-type cells, and increases actin retrograde flow. Mechanistically, we link the impaired mechanotransduction of SHARPIN-deficient cells on collagen to reduced levels of the collagen-binding integrin α11β1. Our results unveil a collagen-specific mechanosensing mechanism and suggest a key function for integrin activity regulation and integrin α11β1 in MSF mechanotransduction.

International audience; The efficiency in HIT (Heterojunction with Intrinsic Thin film) solar cells strongly depends on the passivation of dangling bonds at the a-Si:H/c-Si interface by hydrogen, introduced in the plasma enhanced CVD process. Here in, we study controlled defects that are introduced by Ar ion irradiation. We observe by hard X-ray photoemission spectroscopy (HAXPES) that during Ar ion implantation, Si-H bonds in the a-Si:H layer are broken and become dangling bonds. We quantify the number of dangling bonds in the a-Si:H layer, and we identify the electronic states associated to them, which explains previously observed photoluminescence transitions.

The generation of organoids is one of the biggest scientific advances in regenerative medicine. Here, by lengthening the time that human pluripotent stem cells (hPSCs) were exposed to a three-dimensional microenvironment, and by applying defined renal inductive signals, we generated kidney organoids that transcriptomically matched second-trimester human fetal kidneys. We validated these results using ex vivo and in vitro assays that model renal development. Furthermore, we developed a transplantation method that utilizes the chick chorioallantoic membrane. This approach created a soft in vivo microenvironment that promoted the growth and differentiation of implanted kidney organoids, as well as providing a vascular component. The stiffness of the in ovo chorioallantoic membrane microenvironment was recapitulated in vitro by fabricating compliant hydrogels. These biomaterials promoted the efficient generation of renal vesicles and nephron structures, demonstrating that a soft environment accelerates the differentiation of hPSC-derived kidney organoids., This work has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (StG-2014-640525_REGMAMKID to E.G., P.P., C.T. and N.M. and CoG-616480 to X.T.), the European Commission (project H2020-FETPROACT-01-2016-731957 to X.T. and P.R.-C.), the Spanish Ministry of Economy and Competitiveness/FEDER (BFU2016-77498-P to L.F. and E.M., BFU2015-65074 to X.T., BFU2016-79916-P to P.R.-C., SAF2015-72617-EXP to N.M., SAF2017-89782-R to N.M. and RYC-2014-16242 to N.M.), the Generalitat de Catalunya and CERCA programme (2014-SGR-927 to X.T. and 2017 SGR 1306 to N.M.), Asociación Española contra el Cáncer (AECC CI2016 to L.F. and E.M., LABAE16006 to N.M.). R.O. is supported by an FI fellowship (Generalitat de Catalunya). P.R.-C. is also supported by Obra Social La Caixa. J.C.I.B. is supported by the G. Harold and Leila Y. Mathers Charitable Foundation, the Leona M. and Harry B. Helmsley Charitable Trust (2012-PG-MED002), the Moxie Foundation, the National Institutes of Health (5R21AG055938), the Universidad Católica San Antonio de Murcia and Fundación Dr. Pedro Guillén. C.H.P. is supported by the Bioengineering Excellence of Scientific Training project, cofunded from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement no. 712754 and from the Spanish Ministry of Economy and Competitiveness under the Severo Ochoa grant SEV-2014-0425 (2015–2019). N.M. is also supported by CardioCel (TerCel, Instituto de Salud Carlos III). IBEC is the recipient of a Severo Ochoa Award of Excellence from MINECO.

We investigate low-temperature (&lt, 200 &deg, C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p&ndash, n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 &deg, C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 &deg, C, suggesting that additional defects might appear upon annealing.

Integrins, and integrin-mediated adhesions, have long been recognized to provide the main molecular link attaching cells to the extracellular matrix (ECM) and to serve as bidirectional hubs transmitting signals between cells and their environment. Recent evidence has shown that their combined biochemical and mechanical properties also allow integrins to sense, respond to and interact with ECM of differing properties with exquisite specificity. Here, we review this work first by providing an overview of how integrin function is regulated from both a biochemical and a mechanical perspective, affecting integrin cell-surface availability, binding properties, activation or clustering. Then, we address how this biomechanical regulation allows integrins to respond to different ECM physicochemical properties and signals, such as rigidity, composition and spatial distribution. Finally, we discuss the importance of this sensing for major cell functions by taking cell migration and cancer as examples.

The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental to explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets to demonstrate a large and readily controllable morphology engineering of crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature, The ability to program periodic morphology into nanowires affords control over photonic and electronic transport properties. Here, the authors stimulate Plateau-Rayleigh transformations in silicon nanowires through an oscillating catalyst droplet, resulting in nanowires with island-chain morphology.

We report on the decrease in photoluminescence (PL) intensity with the increase of the sample temperature (thermal quenching) in crystalline silicon and its suppression after ion irradiation. The crystalline silicon surface was passivated with intrinsic and doped hydrogenated amorphous silicon (a-Si:H) layer stacks as for making silicon heterojunction solar cell precursors. Low energy argon ion irradiation, in the range between 5 and 17 keV, was used for controlled defect formation either in the thin a-Si:H top layer or at the interface with the crystalline silicon beneath. The irradiation defects introduce radiative recombination centers in the a-Si:H as can be measured from PL at low temperature. Moreover, the irradiation and annealing result in a strong modification of the thermal quenching of the PL intensity up to 500 K, showing evidence for the strong reduction of thermally activated non-radiative recombinations at the amorphous-crystalline interface. This result can have implications in the field of crystalline silicon surface passivation.

We evaluate the use of p-type silicon oxide (p-SiOx) dielectric layers as a boron diffusion source for n-type crystalline silicon (c-Si) substrates. The p-SiOx layers grown on n-type c-Si substrates by plasma enhanced chemical vapor deposition using a gas mixture of He/hexamethyldisiloxane/CO2/B2H6 are thermally stable and do not peel off during annealing up to 1050 °C, making them effective diffusion sources. The layers were examined before and after annealing with characterization techniques including spectroscopic ellipsometry and secondary ion mass spectrometry. We observe that there is a reduction in the thickness of the p-SiOx layer after annealing by about 50%, and that boron diffuses into the n-type c-Si substrate, forming a p+ layer, limited by the formation of a carbon-rich layer above the c-Si surface. The concentration of holes in the diffused region was measured by the electrochemical capacitance–voltage technique, and it was found that essentially all the boron that diffused into the n-type c-Si was active, unaffected by the presence of carbon and oxygen atoms. The concentration of carriers can be controlled by the initial thickness of the p-SiOx layers and the depth of the p+/n junction can be controlled by the time of annealing. A surface carrier concentration of 3 × 1019 at cm−3 and a sheet resistance of the order of 120 Ω sq−1 was obtained upon annealing at 1050 °C for 30 min.

Fabrication of high-quality ultrathin monocrystalline silicon layers and their transfer to low-cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low-temperature and low-cost process for ultrathin silicon solar cells. By using standard plasma-enhanced chemical vapor deposition (PECVD), we grow high-quality epitaxial silicon layers (epi-PECVD) from SiH4/H2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi-PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H-rich interface fragility, we demonstrate the transfer of large areas (∽10 cm2) ultrathin epi-PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.

International audience; Recently, epitaxial Si layers have attracted strong attention, particularly in photovoltaics. This successful application depends mainly on the easiness of their transfer to a foreign carrier substrate. Therefore, developing a simple and efficient method to realize the transfer is a key issue. A most delicate point is the lift-off of the epitaxial layer from its parent substrate. In this work, we present a method to weaken the interface based on hydrogen incorporation. We have been able to control the hydrogen content at the interface between the crystalline silicon substrate and the epitaxial films by changing the epitaxial growth conditions. Several bonding techniques have been tested and epitaxial Si films have been transferred successfully via anodic bonding. A hydrogen-assisted transferring mechanism is presented.