Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES

International audience; The efficiency in HIT (Heterojunction with Intrinsic Thin film) solar cells strongly depends on the passivation of dangling bonds at the a-Si:H/c-Si interface by hydrogen, introduced in the plasma enhanced CVD process. Here in, we study controlled defects that are introduced by Ar ion irradiation. We observe by hard X-ray photoemission spectroscopy (HAXPES) that during Ar ion implantation, Si-H bonds in the a-Si:H layer are broken and become dangling bonds. We quantify the number of dangling bonds in the a-Si:H layer, and we identify the electronic states associated to them, which explains previously observed photoluminescence transitions.