1. Role of ${\rm Fe}_{3}{\rm O}_{4}$ as a $p$-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices
- Author
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Lu Chen, Yu Bai, Hong-Bo Sun, Yue-Feng Liu, Jing Feng, Hai Wang, Yu-Qing Zhong, Yu Jin, and Dan-Dan Zhang
- Subjects
Electron mobility ,Materials science ,Dopant ,business.industry ,Doping ,Condensed Matter Physics ,Triphenylamine ,Atomic and Molecular Physics, and Optics ,Indium tin oxide ,Organic semiconductor ,chemistry.chemical_compound ,chemistry ,OLED ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Ultraviolet photoelectron spectroscopy - Abstract
Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N,N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4โ-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex.
- Published
- 2011