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Role of ${\rm Fe}_{3}{\rm O}_{4}$ as a $p$-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices
- Source :
- IEEE Journal of Quantum Electronics. 47:591-596
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N,N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4”-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex.
- Subjects :
- Electron mobility
Materials science
Dopant
business.industry
Doping
Condensed Matter Physics
Triphenylamine
Atomic and Molecular Physics, and Optics
Indium tin oxide
Organic semiconductor
chemistry.chemical_compound
chemistry
OLED
Optoelectronics
Electrical and Electronic Engineering
business
Ultraviolet photoelectron spectroscopy
Subjects
Details
- ISSN :
- 15581713 and 00189197
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Quantum Electronics
- Accession number :
- edsair.doi...........673759e750377855fecc014888bc0cc5