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We present excellent performance of the two key devices in future 3D-LSI, HfO 2 ferroelectric tunnel junction (FTJ) memory and poly-Si nanowire transistors. HfO 2 FTJ has advantages such as CMOS compatibility, low operation current, self-compliance, and intrinsic diode properties. By scaling both ferroelectric layer and interfacial layer thickness, reduction of operation voltage while maintaining sufficient ON/OFF ratio was successfully demonstrated. High-mobility poly-Si nanowire transistors were realized by adopting advanced SPC (solid-phase crystallization) process. It was revealed that Coulomb scattering due to defects inside grains as well as defects at grain boundaries and enhanced surface roughness scattering are the major origins of mobility degradation in poly-Si transistors.

Germanium is recognized as new channel material to be introduced in near future CMOS technologies. The advantages are the high hole mobility, the high p-type dopant activation and the low contact resistivity, whereas the smaller band gap results in higher off state current than Si devices. Therefore, Ge-MOSFETs are considered to be most promising to use as a pMOS counterpart of III-V nMOSFETs for high-performance CMOS devices. In order to suppress the off leakage current, Ge-on-insulator (GeOI) substrates may be preferable than bulk substrates. On the other hand, the low thermal budget of the fabrication processes can provide another opportunity for Ge devices. Sequentially stackable COMS devices may be a possible application for 3D-LSIs instead of a TSV technology. Poly-Ge CMOS devices on insulating layers may be one of solutions for the 3D-LSIs. In this paper, electrical properties and processes of high performance strained Ge nanowire pMOSFETs and poly-Ge trigate pFETs both on buried oxide (SiO2) layers, which are dedicated for the former and the latter applications, respectively, are presented. The Ge nanowire devices were formed by a two-step Ge condensation technique for the channels and a self-aligned NiGe process for the source and drain [1]. A compressive strain of around 4% along the channel direction of was observed after the condensation process, suggesting that no relaxation of the misfit strain between Si and Ge was occurred. A significantly high-hole mobility of 1922 cm2/Vs has been achieved thanks to the high strain and the good interfacial quality between the gate insulator and the Ge channel. Ion/Ioff over 105 has also been attained for the Ge nanowire pMOSFET with a gate length (Lg ) of 45 nm. Poly-Ge junction-less (JL) pFETs with a Lg down to 40 nm were formed on a SiO2 layer on a Si substrate [2]. The poly-Ge channel was naturally p-type with a hole concentration around 5x1018 cm-3 presumably due to the crystalline defects. No additional doping has been done. A high Ion/Ioff of around 105 was observed for narrow fin (7 nm) devices, although wider devices (>11 nm) exhibited degraded cut-off characteristics. We also found that the current drivability was drastically improved by using a flash lamp annealing (FLA) method due to the high hole mobility in the poly-Ge channel. A drain current value of 280 μA/μm was achieved at Vd =-1 V for the Lg =80 nm device [3], which is comparable with that of a mono-crystalline Si-pMOSFET of 130-nm technology node. In summary, two types of GeOI pMOSFETs for near-future high-performance logic CMOS-ICs and low-cost stackable applications were demonstrated. In both types of devices, the GeOI platform and non-planar gate configurations are key technologies to achieve sufficiently high Ion/Ioff values, which is one of major concerns to implement Ge devices into markets. Acknowledgement This work was granted by JSPS through FIRST Program initiated by the Council for Science and Technology Policy (CSTP). References [1] K. Ikeda et al., Symp. VLSI Tech., (2013), T30 [2] Y. Kamata et al., Symp. VLSI Tech., (2013), T94 [3] K. Usuda, ISDRS 2013 WP3-04

High-performance poly-Si nano-wire transistors were fabricated by Advanced SPC process, that consists of optimized a-Si deposition, crystallization annealing and poly-Si thinning processes. In order to determine what the dominant factor of scattering mechanism is, carrier mobility behavior at each temperature and surface carrier density (Ns) are fully investigated. It reveals that the hole mobility is dominated by phonon scattering in wide Ns regime. On the other hand, it is suggested that the electron mobility is dominated by Coulomb scattering by defects inside grains at low N s and surface roughness scattering at high N s .

This paper presents the fundamental carrier transport analysis of high-mobility poly-Si nanowire transistors (NW Tr). By adopting advanced SPC (solid-phase crystallization) process, record-high electron mobility (192cm2/Vs) and Ion (200μA/μm) at If of 4nA/μm are achieved without using lasers or catalysts. Carrier density and temperature dependence of mobility, and also physical analysis of poly-Si crystallinity and the channel size, reveal that the origin of mobility degradation in conventional SPC poly-Si Tr. is Coulomb scattering due to defects inside grains as well as defects at grain boundaries and enhanced surface roughness scattering at poly-Si/gate oxide interface, all of which are weakened by advanced SPC process. At high carrier density, mobility of poly-Si nFETs and pFETs by advanced SPC process even exceeds bulk-Si (110) nFETs and (100) pFETs.

Firstly, advantages and fabrication processes for strained SiGe fin- and wire-pMOSFETs are summarized. It is shown that strained SiGe-on-insulator channels formed by the Ge condensation process is effective to keep strain in the channel and hence to boost the current drivability of pMOSFETs. Secondly, our recent progress on a new gate-stack technology using SrGex interlayer and fabrication process of narrow Ge-fin structures using anisotropic wet etching were demonstrated for all-Ge CMOS applications. It is shown that these processes are beneficial for realizing non-planar Ge-CMOS devices in future technology nodes.

We visualize the grain structures for individual nanosized thin film transistors (TFTs), which are electrically characterized, with an improved data processing technique for the dark-field image reconstruction of nanobeam electron diffraction maps. Our individual crystal analysis gives the one-to-one correspondence of TFTs with different grain boundary structures, such as random and coherent boundaries, to the characteristic degradations of ON-current and threshold voltage. Furthermore, the local crystalline uniformity inside a single grain is detected as the difference in diffraction intensity distribution.

An ultimate CMOS structure composed of high mobility wire channel InGaAs-OI nMOSFETs and SGOI pMOSFETs has been successfully fabricated by means of sequential 3D integration. Well behaved CMOS inverters and first demonstration of InGaAs/SiGe (Ge) dual channel CMOS ring oscillators are reported. The 21-stage CMOS ring oscillator operation was achieved at V dd as low as 0.37 V with the help of adaptive back gate bias, V BG control.

To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure. 1 For realizing such a source, we used a regrown InGaAs source 2,3 and an InP source. 4 The regrown sources are also important for high current drivability of 3D or multi-gate devices. The other advantage of regrowth in multi-gate devices is a smooth surface for high electron mobility. 5 In this report, we describe the growth process for high-performance InGaAs MOSFETs.

Triangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. Triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface was demonstrated to provide higher mobility compared with reference InGaAs-OI tri-gate (1.9×) as well as bulk (100) InGaAs nMOSFETs (1.6×), which is possibly due to reduced Dit in conduction band and resultant suppressed carrier trapping at the MOS interface. Lower noise and hysteresis in triangular device supported this model. High Ion value of 930 μA/μm at Lg = 300 nm indicates the potential of the triangular InGaAs-OI nMOSFETs for ultra-low power and high performance CMOS applications.

We compared current drivability between (001)/ and (001)/ strained Ge-on-insulator pMOSFETs under biaxial and uniaxial stress. Higher intrinsic transconductance (gm, int) was experimentally demonstrated for the first time in the (001)/ devices with a gate length (Lg) less than 100 nm under the both strain conditions, although this is not the case for the long-channel devices. This is possibly attributable to more significant non-parabolicity of the valence band (VB) dispersion, i.e., heavier effective mass at energy apart from the VB minimum, along than along . It is also found that the parasitic resistance (RSD) governed by the contact resistance between the NiGe-source and the strained-Ge channel is lower along direction than the counterpart. As a result, higher drive current was observed for a device with Lg of 55 nm under both the biaxial-(644 μA/μm) and uniaxial stress (536 μA/μm) at Vd = -0.5 V than for counterpart, although mobility was highest in the channel under the uniaxial stress.

InGaAs/Ge stacked 3D CMOS inverters have been successfully demonstrated down to Vdd = 0.2 V. The negligible degradation of the top and the bottom device characteristics indicates high technical feasibility of the InGaAs/Ge stacked 3D integration for ultra low-power and high performance CMOS.

The effect of KBT-3022 (ethyl 2-[4,5-bis(4-methoxyphenyl)thiazol-2-yl]pyrrol-1-ylacetate), a new cyclooxygenase inhibitor, on experimental brain edema was studied. In vitro, KBT-3022 (100 microM) and its metabolite desethyl KBT-3022 (10 and 100 microM), but neither acetylsalicylic acid nor indomethacin, inhibited arachidonic acid-induced swelling of guinea pig cortical slices. KBT-3022 (3-100 microM) and desethyl KBT-3022 (3-30 microM), but neither acetylsalicylic acid nor indomethacin, inhibited lipid peroxidation in guinea pig brain homogenate. In vivo, oral administration of KBT-3022 (1, 3 and 10 mg/kg) and indomethacin (10 and 30 mg/kg), but not acetylsalicylic acid, prevented brain edema induced by bilateral carotid occlusion and recirculation in gerbils. Indomethacin then prevented postischemic hyperthermia, but not KBT-3022. KBT-3022 (10 mg/kg) and indomethacin (30 mg/kg) inhibited lactate accumulation in gerbil brain after ischemia and recirculation. These results suggest that KBT-3022 prevents development of both cytotoxic edema in vitro and vasogenic edema in vivo.

SummaryUsing guinea pigs, a study was conducted on the effects of KBT-3022, a new anti-platelet agent, on hemorheological properties in various tests including blood filterability, blood viscosity, shear stress-induced red blood cell (RBC) deformability and contents of ATP and 2,3-diphosphoglycerate (2,3-DPG). Oral administration of KBT-3022 at 1 and 10 mg/kg significantly increased blood filterability, and significantly reduced blood viscosity at 10 mg/kg without changing the hematocrit, plasma fibrinogen concentration or plasma viscosity. KBT-3022 (10 mg/kg, p.o.) improved RBC deformability in response to shear stress, which was evoked by passing the blood through a thin tube. This dose of KBT-3022 also increased the contents of ATP and 2,3-DPG in RBC. These findings indicate that KBT-3022 may reduce blood viscosity as a sequel to improvement of RBC deformability through direct action on RBC. The increase in the intracellular levels of ATP and 2,3-DPG was considered to be involved in this improvement of hemorheological properties. These hemorheological effects of KBT-3022 appear to be promising for the treatment of patients with ischemic vascular disease.

The protective effect of KBT-3022 (ethyl 2-[4,5-bis-(4-methoxyphenyl)thiazol-2-yl]pyrrol-1-ylacetate), a new cyclooxygenase inhibitor, in cerebral hypoxia and ischemia was studied and compared with those of indomethacin and acetylsalicylic acid (ASA). Oral administration of KBT-3022 (3-100 mg/kg) and indomethacin (3 and 10 mg/kg) significantly prevented KCN-induced death in mice, while ASA (100mg/kg) had no effect. KBT-3022 (3 and 10 mg/kg, p.o.) and indomethacin (10 mg/kg, p.o.) significantly prolonged the survival time of mice subjected to normobaric hypoxia, while ASA (100 mg/kg, p.o.) had no effect. KBT-3022 (3-30 mg/kg, p.o.) and indomethacin (3 mg/kg, i.p.) significantly ameliorated delayed neuronal death in the gerbil hippocampal CA1 sector after occlusion of bilateral carotid arteries for 5 min, while ASA (300 mg/kg, p.o.) had no effect. KBT-3022 (10 mg/kg, p.o.) significantly inhibited ATP depletion in the gerbil hippocampus after a 1-min occlusion of bilateral carotid arteries, but had no effect on ATP depletion after a 5-min occlusion and the recovery during recirculation. These results show that KBT-3022 exerts protective effects against cerebral anoxia and hypoxia and ameliorates delayed neuronal death in the hippocampus. KBT-3022 may therefore be useful for prophylaxis of ischemic cerebrovascular disorders.

In this study, we investigated the effects of KBT-3022 (ethyl 2-[4,5-bis(4-methoxyphenyl)-thiazol-2-yl]pyrrol-1-ylacetate), a potent and long-lasting anti-platelet agent, in several experimental thrombosis models and compared them with those of other anti-platelet drugs. Oral administration of KBT-3022 prevented arachidonic acid-induced death due to pulmonary embolism in mice and rabbits with respective ED50 values of 0.29 and 0.12 mg/kg. The protective effect of acetylsalicylic acid (ASA) against mortality was weaker than that of KBT-3022, and ticlopidine hydrochloride (TP) showed no such effect in these models. In a guinea pig arterio-venous shunt model, the inhibition by KBT-3022 of thrombus formation on a silk thread inserted into the shunt was dose-dependent and 300 and 30 times more potent than the inhibition obtained with ASA and indomethacin, respectively. In a model of aortic thrombosis induced by perivascular application of 20% silver nitrate solution, KBT-3022 (1 mg/kg, p.o.) inhibited thrombus formation significantly, ASA (100 mg/kg, p.o.) tended to inhibit it, and TP had no effect. However, in a stasis-induced venous thrombosis model in guinea pigs, TP inhibited thrombus formation significantly, but KBT-3022 and ASA were ineffective. These results suggest that KBT-3022 may be a useful drug for the treatment and/or prophylaxis of thrombus formation in shunts and aortic thrombosis.

We have successfully fabricated InGaAs-OI tri-gate nMOSFETs, for the first time. The devices were depletion-type (p-n junction-less) nFETs with Fin-channel width (W fin ) down to 20 nm and had metal source/drain structures. It was experimentally demonstrated that W fin scaling effectively improved cut-off properties at N d up to 5 × 1018 cm−3 and the electron mobility in the narrowest channel (W fin = 20 nm) was about 3x higher than that of the inversion layer. It was also demonstrated that enhancement of In content from 53% to 70% leaded to 30% I on enhancement without I off degradation.

HfAlO/GeOx/Ge p-MISFETs with EOT of 0.84nm are demonstrated. Low interface trap density of GeOx/Ge interface enable us to high mobility. Careful control of high-k fixed charges will allow achieving low EOT and high mobility of Ge p-MISFETs.

Thin-body GeOI substrates with thin Al2O3/SiO2 BOX layers are successfully fabricated for the first time. It is found that the bonding interface was robust enough for Mechanical Polishing and CMP even after bonding at a room temperature in atmosphere. The GeOI surfaces etched with ozone water are atomically flat. Moreover, Dit of as low as 3.9e+11 eV-1cm-2 at the GeOI/BOX is obtained. These results suggest that negligible negative impact on carrier mobility and sub-threshold characteristics can be realized by using the GeOI substrates with thin Al2O3/SiO2 BOX layers.

Hole-mobility and carrier-velocity characteristics of Ge-rich SGOI-nanowire were comprehensively investigated. The Ge-rich SGOI-nanowire channel devices were found to have higher hole-mobility and velocity than that of the unstrained-Ge and SOI devices. The ideal performance assessment revealed that a significant increase (over 2.6 times) in drive current is expected. These indicate that the Ge-rich uniaxially strained SGOI-nanowire channel device has potential to paves the way to future low-power consumption and high-performance CMOS technology.

Metal source/drain (S/D) Ge nanowire MOSFETs with a compressive strain as high as 3.8% were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high inversion hole mobility (μ eff = 855 cm2/Vs @ N s = 5×1012cm−2) and saturation drain current 731µA/µm at V d =−1V were achieved among Ge nanowire pFETs ever reported. It is found that the extremely low contact resistivity ρ c ∼ 4×10−8O cm2 for the Schottky contact contributes to the high saturation current as well as the high mobility.

Introduction High mobility channel materials are extensively explored to replace strained-Si in MOSFET devices to reduce power consumption by lowering supply voltages, V dd, without degrading circuit performance. Among the various high mobility channel materials, compressively strained-Ge[1-4] is recognized as the most promising option for p-channel FETs due to its significantly high hole-mobility and compatibility with Si-CMOS process. In this paper, Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record-high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. Device fabrication Uniaxially strained-Ge nanowire channel was formed by the two-step Ge condensation technique, which induced uniaxial stress along the channel direction[3]. As a gate insulator, 5 nm thick Al2O3 was grown by using ALD. Partly, in order to improve the interface characteristics and hole mobility, MMT-plasma oxidized GeOx / 3.2 nm-Al2O3 stacked gate insulator were adopted[4,5]. Ni(Si)Ge-metal S/D structures were formed by SALICIDE-like process. Detailed device fabrication process was shown in [4]. The Relationship between the wire width, W wire and strain applied to the channel was measured by an immersion high-NA Raman spectroscopy[6] and a NBD measurement. The dependence of strain along the channel direction, ε xx on wire width is shown in Fig.1. Extremely high (-3.8%) strain was evaluated for W wire= 20 nm device, which was almost identical with the value obtained from the NBD measurement. Moreover, extremely high (over -3.9%) strain, which is almost identical with the misfit strain between Ge and Si, was evaluated by strained-Ge nanowire channel formed by improved two-step Ge condensation technique[4]. Mobility enhancement by uniaxial compressive strain In order to estimate the mobility enhancement factors in uniaxially strained-Ge and Si1-x Ge x inversion channels, Poisson-Schrodinger self-consistent solver[7] was used to calculate the effective mass (m eff) values. Here, 6x6 k*p method was used. Figure 2 shows the calculated Ge concentration dependence of inversion layer effective hole mass along [110] channel direction. For Ge (x=1), m eff was calculated to be 0.055m 0 at fully strained condition, i.e., the lattice constant is identical with that of Si in [110] directions. Considering the ratio of m eff, 12 times higher mobility that for unstrained Si can be expected on uniaxially strained-Ge. At these highly strained condition, orientation dependence among (001), (112) and (110) is diminished due to the band deformation. Device characterization Hole mobility was extracted by a split CV method for long-channel and multi-wire devices. Figure 3(a) shows hole-mobility of the fabricated multi-wire MOSFETs. The W wire = 40nm device, which has 95% Ge channel and GeOx / Al2O3 stacked gate insulator, showed a peak hole mobility of 1922 cm2/Vs at N s = 1.7x1012cm-2, which exceeds that of -3.8% strained-Ge nanowire MOSFET with Al2O3 gate stack. Moreover, the obtained mobility at N s = 5x1012cm-2 is corresponding to 5.8 times of the counterpart of a state-of-the-art strained-Si pMOSFETs[1]. Figure 3(b) shows that mobility values for fixed N s increased with Ge concentration, x. The tendency is consistent with the m eff calculation in Fig.2. Figure 4 shows I d-V g characteristics of fabricated strained-Ge nanowire pMOSFET with GeOx / Al2O3 stacked gate insulator. Ion/Ioff ~ 105 has also been attained. And a minimum drain leakage current (I d,off), as low as current 2.7x10-9A/μm at V d = -0.5V, were achieved with L g = 45 nm. This I d,off value is the lowest minimum drain leakage among the previously reported sub-100nm L g strained-Ge devices even though that has a shortest L g. Conclusion s Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS. References [1] R. Pillarisetty et al., IEDM p.150 (2010). [2] W. Chern et al., IEDM p.387 (2012). [3] K. Ikeda et al., VLSI Symp. p.165 (2012). [4] K. Ikeda et al., VLSI Symp. p.T31 (2013). [5] Y. Kamimuta et al., ISTDM. p.34 (2012). [6] D. Kosemura et al., SSDM p.931(2011). [7] S. Birner et al., IEEE TED 54(2007)2137. Acknowledgements This work was granted by JSPS through FIRST Program initiated by the Council for Science and Technology Policy (CSTP).

The electron mobility in HfO2/In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistors (nMISFETs) has been found to be significantly enhanced in the sub-1.0 nm equivalent oxide thickness (EOT) regime by annealing before the atomic layer deposition (ALD) of the HfO2 gate dielectric. XPS measurements revealed that the predeposition annealing increased the amount of GaOx and reduced the amount of AsOx at the MIS interface, which is considered to reduce the trapped charge density and enhance the mobility, especially in the low-surface-carrier-density region.

Introduction High mobility channel materials are extensively investigated to replace strained-Si in MOSFET devices to reduce power consumption by lowering supply voltages, V dd, without degrading circuit performance. Among the various high mobility channel materials, strained-Ge[1-4] is recognized as the most promising option for p-channel FETs due to its significantly high hole-mobility and compatibility with Si-CMOS process. This paper presents metal S/D nanowire pFETs having a high-mobility strained Ge channel formed by doping-free processes for channels and S/D. The large compressive strain as high as -3.9% resulted in a record high hole mobility (μ eff = 1992 cm2/Vs @ N s = 1.7x1012 cm-2) and a low contact resistivity (ρ c ~ 3.8x10-8 Ω cm2). Device fabrication Uniaxially strained-Ge nanowire channel was formed by the two-step Ge condensation technique, which induced uniaxial stress along the channel direction. As a gate insulator, GeOx interlayer and 3.2 nm- Al2O3 were grown by using MMT-plasma[4,5] and ALD, respectively. NiGe-metal S/D structures were formed by SALICIDE-like process on the unintentionally doped Ge nanowire. Detailed device fabrication process was shown in [3,4]. Figure 1(a) shows a XTEM of the narrowest channel with a wire width (W wire) of 15 nm. The Relationship between the W wire and strain applied to the channel was measured by a Raman spectroscopy. The dependence of strain along the channel direction ε xx on W wire is shown in Fig. 1(b). Extremely high (over -3.9%) strain, which is almost identical with the misfit strain between Ge and Si, was evaluated for sub W wire=40 nm devices. Device characterization Hole mobility was extracted by a split CV method for long-channel and multi-wire devices. Figure 2(a) shows hole-mobility of the fabricated multi-wire MOSFETs. The W wire = 40nm device, which has 95% Ge channel, showed a peak hole mobility of 1922 cm2/Vs at N s = 1.7x1012cm-2, which exceeds that of -3.8% strained-Ge nanowire MOSFET with Al2O3 gate stack[3]. Moreover, the obtained mobility at N s = 5x1012cm-2 is corresponding to 5.8 times of the counterpart of a state-of-the-art strained-Si pMOSFETs[1]. Ion / Ioff ~ 105 has also been attained for the strained-Ge nanowire pMOSFET with a gate length (Lg ) of 40 nm (Fig. 2(b)). A metal S/D MOSFET is an attractive candidate because of its low extension sheet resistance properties without a heavy doping in extension regions. However, parasitic resistance (R para) which is dominated by contact resistance (R c) between the extension metal and the inversion layer in this device, have been still an issue because of the decreasing contact area. Here, we demonstrate low R c characteristic due to low Schottky barrier height (SBH) for NiGe/ strained-Ge interface. The W wire dependence of parasitic resistance (R SD) were evaluated as shown in Fig. 3. Reduced R SD as low as 490 Ωμm for W wire = 54 nm device is achieved by using undoped Ge nanowire formed by two-step Ge condensation. The specific contact resistivity, ρ c of NiGe / strained-Ge interface was estimated by using previously proposed model[3]. Extremely low ρ c, that is as low as ~ 3.8x10-8 Ω cm2 has been achieved in spite of doping-free Schottky contact presumably due to the strong Fermi-level pinning to the valence band edge of the strained-Ge and reduction of SBH at Ni(Si)Ge/(Si)Ge interface by rising valence subband top energy for higher Ge concentration and strain. Conclusion Record high hole mobility (μ eff = 1922 cm2/Vs) and extremely low S/D contact resistivity (ρ c ~ 3.8x10-8 Ω cm2) were achieved for the highly strained-Ge nanowire pMOSFET. These results indicate that strained-Ge channels have a potential to serve as pFET channel of ultimately-scaled future CMOS. References [1] R. Pillarisetty et al., IEDM p.150 (2010). [2] W. Chern et al., IEDM p.387 (2012). [3] K. Ikeda et al., VLSI Symp. p.165 (2012). [4] K. Ikeda et al., VLSI Symp. p.T31 (2013). [5] Y. Kamimuta et al., ISTDM. p.34(2012). Acknowledgements This work was granted by JSPS through FIRST Program initiated by the Council for Science and Technology Policy (CSTP).

Ga2O3 film growth on InGaAs substrates was investigated using an atomic layer deposition system with trimethylgallium (TMGa) and H2O as precursors. Self-limiting growth of Ga2O3 was confirmed on InGaAs substrates as well as on Si and GaAs. During initial formation of the Ga2O3 film on an InGaAs substrate, the selective self-cleaning effect of TMGa on AsOx and GaOx was observed. The insertion of ultrathin Ga2O3 into an Al2O3/InGaAs gate stack as an interfacial passivation layer proved quite effective to reduce Dit around the midgap. The Al2O3/InGaAs MISFET performance also revealed improvement of the effective mobility for both NH4OH- and (NH4)2S-treated devices.

on such Ge-rich non-planar channels. 9) In this letter, we demonstrate a fabrication process and high hole mobility characteristic of uniaxially strained SiGe-on-insulator (SGOI) channel tri-gate MOSFET with Ge fraction x of 0.65 formed by two-step Ge condensation. The current drive of a uniaxially strained SGOI channel tri-gate MOSFET, which has a nickel-germanosilicide (NiSiGe) metal S/D structure with gate length (Lg) of 50 nm and wire width (Wwire) of 25 nm, was also investigated and compared with that of SOI channel tri-gate MOSFETs. Sufficiently high mobility and higher current drive were obtained in the SGOI channel tri-gate FETs than those of the SOI channel tri-gate MOSFET, as well as high immunity to the short-channel effects.

Antigenicity study of 6-amidino-2-naphthyl 4-[(4, 5-dihydro-1H-imidazol-2-yl) amino] benzoate dimethanesulfonate (FUT-187), a new protease inhibitor, was investigated in guinea pigs and mice and the following results were obtained. 1. In guinea pigs immunized with FUT-187 plus adjuvant by intramuscular / subcutaneous routes, ASA, ACA and PCA reactions challenged intraveneously or intradermally were positive. 2. In guinea pigs immunized with FUT-187 plus adjuvant by intramuscular / subcutaneous routes, ASA and PCA reactions challenged orally were negative. 3. In guinea pigs immunized with FUT-187 by the oral route, ASA, ACA and PCA reactions were negative. 4. In guinea pigs immunized with IABA and AN plus adjuvant by intramuscular / subcutaneous routes, ASA and PCA reactions were negative. 5. 48-hr PCA reactions were elicited with sera obtained from BALB / c and C3H / He mice immunized with FUT-187 plus adjuvant by the intraperitoneal route, responses were negative. 6. From the results of hapten inhibition tests using anti-FUT-187 guinea pig serum, it is suggested that the antigenicity of FUT-187 is attributable to the its benzoic acid.

The diagram (Fig. 1) qualitatively exhibits how several important observations will have to be undertaken. Here, I would like to, at least, raise the question or discuss the problem referring; to “Man in Space”.

An improvement of Fourier synthesis optics for hard x-ray imaging is described, and the basic performance of the new optics is confirmed through numerical simulations. The original concept of the Fourier synthesis imager utilizes nonposition-sensitive hard x-ray detectors coupled to individual bigrid modulation collimators. The improved concept employs a one-dimensional position-sensitive detector (such as a CdTe strip detector) instead of the second grid layer of each bigrid modulation collimator. This improves the imaging performance in several respects over the original design. One performance improvement is a two-fold increase in the average transmission, from 1/4 to 1/2. The second merit is that both the sine and cosine components can be derived from a single grid-detector module, and hence the number of imaging modules can be halved. Furthermore, it provides information along the depth direction simultaneously. This in turn enables a three-dimensional imaging hard x-ray microscope for medical diagnostics, incorporating radioactive tracers. A conceptual design of such a microscope is presented, designed to provide a field of view of 4 mm and a spatial resolution of 400 microm.

Stable hydraulic pressure pulse series can be generated by an appropriate valve operation at a pipe end. The pressure of the pulse series is amplified by a booster piston, consequently the pressure pulse series with a pressure higher than 400 MPa is obtained for a frequency of 15.2 Hz. By a pressure intensifier applying the amplified pressure pulse series, a continuous oil flow with an amplified pressure higher than 300 MPa is obtained for a source pressure of 6.6 MPa, Using this pressure pulse series generator as a lateral pressure cutting device of a ductile material, an aluminum column of 20 mm in diameter with a notch is cut after 580 cycles of the repeating pressure of 204 MPa. Hydraulic pressure pulse series generator discussed in this paper is practical enough to be used as a pressure intensifier and a lateral pressure cutting device.

A scientific satellite, dedicated to X-ray astronomy, was launched into orbit from Kagoshima Space Center, University of Tokyo on 21 February 1979. “Hakucho” (CORSA-b) is a spin-stabilized satellite which watches for appearance of X-ray burst in a sky region around the direction of the spin-axis, and scans and surveys a large part of the sky for X-ray sources. The direction of the spin-axis can be maneuvered to selected celestial locations. The outline of the mission, some technical details of the instrumentation, and the operational performance of the spacecraft are described. A short summary of the observational results is also presented.

MK-0521 and captopril were orally administered to acute (6 to 8 days after unilateral renal artery constriction) and chronic (2 to 2.5 months after the constriction) 2-kidney Goldblatt hypertensive dogs for 7 to 21 days. MK-0521 lowered the blood pressure to similar extents in the acute and chronic stages of hypertension. The antihypertensive effect of MK-0521 was dose-dependent and persistent even after its cessation. Captopril also produced an antihypertensive effect, although the effect in the chronic stage of hypertension was less prominent than that in the acute stage of hypertension. MK-0521 was more inhibitory on the renin-angiotensin system than captopril. In the acute stage of hypertension, the dogs treated with MK-0521 had increased angiotensin converting enzyme (ACE) activity, while they had decreased plasma angiotensin II level and elevated plasma angiotensin I level and plasma renin activity. These results clarified the inhibitory effect of MK-0521 on ACE. In contrast, in the chronic stage of hypertension, MK-0521 showed no depression of plasma angiotensin II. There were no significant changes in daily urinary volume, and renal clearances of sodium, potassium and creatinine. These results suggest that the major mechanism of the antihypertensive effect of MK-0521 in 2-kidney Goldblatt hypertensive dogs is an inhibition of the ACE. In addition, the different effects in the acute and chronic hypertensive dogs suggest that some differences exist in the mechanisms of maintaining blood pressure between the two stages of 2-kidney Goldblatt hypertensive dogs.

Angiotensin converting enzyme (ACE) inhibitory activity of MK-0521 in dogs and the effects of its single oral administration on blood pressure and the renin-angiotensin system in 2-kidney Goldblatt hypertensive dogs were compared with those of captopril and MK-421. MK-0521 at 0.001-0.1 mg/kg, i.v., or 0.01-1 mg/kg, p.o., attenuated the pressor effect of angiotensin I without affecting that of angiotensin II and augmented the depressor effect of bradykinin. The potency of MK-0521 to reduce the pressor effect of angiotensin I was 9.8 times that of captopril by intravenous administration, and by oral administration, it was 15.9-32.1 times that of captopril and approximately 3 times that of MK-421. When administered orally, the onset of action and the time to peak effectiveness were more rapid than those of MK-421, but slower than those of captopril. Duration of the action of MK-0521 was longer than that of captopril and equal or longer than that of MK-421. The inhibition of ACE was well correlated with serum MK-0521 levels. MK-0521 produced a dose-dependent antihypertensive effect in 2-kidney Goldblatt hypertensive dogs at over 0.3 mg/kg, p.o., without affecting the heart rate. The antihypertensive effect of MK-0521 was persistent and approximately 3 times more potent than that of captopril. MK-0521 inhibited the serum ACE activity and increased the plasma renin activity, while it had a tendency to decrease plasma aldosterone level. These changes were parallel to the time course of the antihypertensive effect. These results suggest that the main mechanism of the antihypertensive effect of MK-0521 is the suppression of angiotensin II production due to the inhibition of the ACE.

We performed a couple of balloon experiments to measure the size and the location of Cyg-X-1 using the techniques of the modulation collimator [1]. The angular periods of the modulation collimator were 26′ and 10′ for the respective flights corre­sponding to the approximate angular resolutions of the size determination and location, 3′ and l′ respectively. Preliminary results of the experiment with 3′ resolution are reported here.*

Modulation collimators have been used in recently reported work to determine the angular sizes and celestial positions of the X-ray sources Sco X-1 and Taurus XR-1 (Crab Nebula) with precisions of 15″ to 30″. The measurements were made by means of four-grid collimators, star photography and optical imaging of the collimators. In the present paper we discuss (1) the principles and uses of various forms of the modulation collimators as they pertain to X-ray astronomy, (2) several methods for determining the celestial positions of X-ray sources with these collimators, (3) the techniques for the alignment and calibration of these detection systems, (4) an image-forming collimator, and finally, (5) some of the optical properties of these grid systems. The modulation collimator is quite versatile and is particularly suited for measurements from spacecraft with relatively poor pointing capability. Thus it should be a useful tool in X-ray astronomy for some years to come.

THE purpose of this article is to present a preliminary report on a new cosmic X-ray source. The source was observed near Sco X-1 during recent rocket flights to observe Sco X-1 simultaneously with ground-based optical telescopes. It is very likely that we observed the source reported to have appeared between July 6 and July 9 by Conner et al. in an IAU telegram issued on July 30, 1969.

Angular diameters of X-ray source regions in Scorpio and Sagittarius constellations by rocket measurement with collimator