Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

Authors :: Yoshihiko Moriyama
Toshifumi Irisawa
Minoru Oda
Keiji Ikeda
Tsutomu Tezuka
Yuuichi Kamimuta
Source :: Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Publication Year :: 2011
Publisher :: The Japan Society of Applied Physics, 2011.

Subjects :: Materials science
business.industry
Optoelectronics
Insulator (electricity)
business

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........4154468f684d5ef4946de28841c1924a

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