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Growth process for high performance of InGaAs MOSFETs
- Source :
- 72nd Device Research Conference.
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure. 1 For realizing such a source, we used a regrown InGaAs source 2,3 and an InP source. 4 The regrown sources are also important for high current drivability of 3D or multi-gate devices. The other advantage of regrowth in multi-gate devices is a smooth surface for high electron mobility. 5 In this report, we describe the growth process for high-performance InGaAs MOSFETs.
Details
- Database :
- OpenAIRE
- Journal :
- 72nd Device Research Conference
- Accession number :
- edsair.doi...........04b1464118035e24759ecdef93283704