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Electrically driven plasmonic nanoantennas can be integrated as a local source of the optical signal of advanced photonic schemes for on-chip data processing. The inelastic electron tunneling provides the photon generation or launch of surface plasmon waves. This process can be enhanced by the local density of optical states of nanoantennas. In this paper, we used scanning tunnel microscopy-induced light emission to probe the local optoelectronic properties of single gold nanodiscs. The electromagnetic field distribution in the vicinity of plasmonic structures was investigated with high spatial resolution. The obtained photon maps reveal the nonuniform distribution of electromagnetic near-fields, which is consistent with nanoantenna optical modes. Also, the analysis of derived I(V) curves showed a direct correlation between the nanoantenna optical states and the appearance of features on current-voltage characteristics.

The results of experiments aimed at fabricating and studying the properties of photodetector structures based on single-layer graphene produced by chemical vapor deposition are presented. The configuration of a Ta2O5 vertical microcavity with a resonance wavelength of about 850 nm and a lower dielectric SiO2/Ta2O5 distributed Bragg reflector is taken as the base structure. The conditions for the transfer and fabrication of mesas in the graphene layer on the microcavity surface are optimized. The diagnostics by Raman spectroscopy of the structural quality of graphene after fabrication of the mesas in the graphene layer and contact pads are indicative of the single-layer structure of graphene with a low intensity of features in its spectrum, responsible for imperfection of the structure. The photocurrent is measured under local optical pumping.

Strain engineering is a powerful tool that allows tuning of the optical and electronic properties of the nanostructures, opening new pathways for the nanowire (NW)-based practical applications. We ...

Attempts to improve solar cells efficiency touch all its constituents and are directly related to their fabrication protocols. While the most promising material platform for high efficiency photovoltaic devices is still III-V semiconductors, introduction of novel materials like single-walled carbon nanotubes (SWCNTs), which are characterized by unique combination of conductivity and transparency, might greatly yield the device performance. Here, for the first time, we present the results of the fabrication and characterization of a thin-film GaAs solar cell with a SWCNT top contact. We examine the contact between the SWCNT film and the semiconductor structure by means of the optical and electron beam-induced current techniques. The fabricated device demonstrates better performance, that is, increased power conversion efficiency from 10.6% to 11.5% when compared to the cell with the traditional metal contact grid, stemming from the enhanced photocurrent collection efficiency and low parasitic light absorption in the emitter layer. We envision future prospects to exploit the multifunctionality of the SWCNTs in fabrication of highly efficient photovoltaic devices including flexible solar cells.

Semiconductor nanowires exhibit numerous capabilities to advance the development of future optoelectronic devices. Among the III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear susceptibility, making it especially promising for nanophotonic applications. However, investigation of single nanostructures and their waveguiding properties remains challenging owing to typically planar experimental arrangements. Here we study the linear and nonlinear waveguiding optical properties of a single GaP nanowire in a special experimental layout, where an optically trapped structure is aligned along its major axis. We demonstrate efficient second harmonic generation in individual nanowires and unravel phase matching conditions, linking between linear guiding properties of the structure and its nonlinear tensorial susceptibility. The capability to pick up single nanowires, sort them with the aid of optomechanical manipulation and accurately position pre-tested structures opens a new avenue for the generation of optoelectronic origami-type devices.

Funding Information: V.N. thanks the Russian Foundation for Basic Research (RFBR project No. 19-32-60040) for PDMS/MW membrane fabrication and optical measurements. V.F. thanks the Russian Foundation for Basic Research (RFBR project No. 19-32-60037) for the support of the MBE growth. V.N. and F.K. thank the support from the Russian Foundation for Basic Research (grant 20-32-90182) for electrical measurements. V.N., F.K., R.I. and I.M. thank the Russian Scientific Foundation (RSF project No. 20-19-00256) for chemical treatment of PDMS. V.N., V.F., A.M., F.K. and K.S. thank the Ministry of Science and Higher Education of the Russian Federation (FSRM-2020-0005) for the general support. E.M. thanks the Basic Research Program at the National Research University Higher School of Economics (HSE University) in 2021 for optical measurements. N.A.-M. and M.T. thank ITN Marie Curie project INDEED (grant No. 722176) for GaPAs NW/PDMS membrane investigation. This work received financial support from Partenariats Hubert Curien Kolmogorov project No. 43784UJ and Indo French Centre for the Promotion of Advanced Research (CEFIPRA) Project No. 6008-1. A.G.N. acknowledges the Russian Scientific Foundation (RSF project No. 21-72-20050) for synthesis of SWCNTs. Funding Information: Funding: V.N. thanks the Russian Foundation for Basic Research (RFBR project No. 19-32-60040) for PDMS/MW membrane fabrication and optical measurements. V.F. thanks the Russian Foundation for Basic Research (RFBR project No. 19-32-60037) for the support of the MBE growth. V.N. and F.K. thank the support from the Russian Foundation for Basic Research (grant 20-32-90182) for electrical measurements. V.N., F.K., R.I. and I.M. thank the Russian Scientific Foundation (RSF project No. 20-19-00256) for chemical treatment of PDMS. V.N., V.F., A.M., F.K. and K.S. thank the Ministry of Science and Higher Education of the Russian Federation (FSRM-2020-0005) for the general support. E.M. thanks the Basic Research Program at the National Research University HigherSchool of Economics (HSE University) in 2021 for optical measurements. N.A.-M. and M.T. thank ITN Marie Curie project INDEED (grant No. 722176) for GaPAs NW/PDMS membrane investigation. This work received financial support from Partenariats Hubert Curien Kolmogorov project No. 43784UJ and Indo French Centre for the Promotion of Advanced Research (CEFIPRA) Project No. 6008-1. A.G.N. acknowledges the Russian Scientific Foundation (RSF project No. 21-72-20050) for synthesis of SWCNTs. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostruc-tured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involv-ing single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.

The integration of direct bandgap III–V materials on Si is one of the main bottlenecks on the way to cheap and highly efficient optoelectronic devices. The goal of this work is to study the formati...

In this paper, we study light emission from a tunnel contact between the Au film on a glass substrate and the Au-coated tungsten probe of the scanning tunneling microscope at ambient conditions. We...

In this paper we study the solar cell based on GaN nanowires array grown on Si substrate with buffer SiC layer via molecular beam epitaxy. Crystal quality of SiC layer and GaN nanowires was studied by means of Raman scattering technique and low temperature photoluminescence measurements. Spectral and volt-ampere characteristics of the n-GaN/SiC/p-Si heterostructures with different thickness of diffusive buffer SiC-3С layers were studied. It was shown that increase of the buffer layer thickness over 100 nm leads to rise of the open circuit voltage and to increase of the efficiency of solar cell in comparison with n-GaN/p-Si heterostructure without buffer layer. Experimental data shows the presence of the defect states at the heterointerface.

A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

Semiconductor nanowires (NW) have received much attention for their unique properties providing exceptional flexibility in device engineering. In particular, gallium phosphide NWs demonstrate effective wave-guiding properties and broadband nonlinear frequency conversion, and find applications in green to amber optical range optoelectronics and photocatalytic devices. They also exhibit one of the broadest transparency range, high values of the nonlinear refractive index and good thermal conductivity that make them perspective for nanophotonics.

Funding Information: The authors J.E., C.D. and A.K. would like to thank Jean Dussaud for his work on the MOVPE setup. V.N. would like to thank Maria Baeva for her assistance with the stretchable LED transparency measurements.J.E., C.D. and A.K. thank French National Labex GaNeX (ANR-11-LABX-0014) for MW synthesis and CL measurements. V.N. thanks the Russian Foundation for Basic Research (RFBR project no. 19-32-60040) for PDMS/MW membrane fabrication and optical measurements. I.S.M., V.N., F.M.K. thank the support from the Russian Science Foundation (grant 20-19-00256) for PDMS synthesis and electrical measurements. D.K. and A.G.N. thank Russian Foundation of Basic Research project no. 20-03-00804 for the synthesis of carbon nanotubes. F.E.K. thanks the support from the Russian Science Foundation (grant 19-79-00313) for the LED array encapsulation and membrane transfer. I.S.M., F.M.K., V.N., V.A.M., S.M., A.A.V., A.V.U., and D.A.M. thank the Ministry of Science and Higher Education of the Russian Federation (FSRM-2020-0005) for the general support. N.A. and M.T. acknowledge the financial support from the ITN Marie Curie project INDEED (grant no. 722176), by the Indo-French Centre for the Promotion of Advanced Research (IFCPAR/CEFIPRA project no. 6008-1) for MW/PDMS membrane processing and characterization. Funding Information: Funding: J.E., C.D. and A.K. thank French National Labex GaNeX (ANR-11-LABX-0014) for MW synthesis and CL measurements. V.N. thanks the Russian Foundation for Basic Research (RFBR project no. 19-32-60040) for PDMS/MW membrane fabrication and optical measurements. I.S.M., V.N., F.M.K. thank the support from the Russian Science Foundation (grant 20-19-00256) for PDMS synthesis and electrical measurements. D.K. and A.G.N. thank Russian Foundation of Basic Research project no. 20-03-00804 for the synthesis of carbon nanotubes. F.E.K. thanks the support from the Russian Science Foundation (grant 19-79-00313) for the LED array encapsulation and membrane transfer. I.S.M., F.M.K., V.N., V.A.M., S.M., A.A.V., A.V.U., and D.A.M. thank the Ministry of Science and Higher Education of the Russian Federation (FSRM-2020-0005) for the general support. N.A. and M.T. acknowledge the financial support from the ITN Marie Curie project INDEED (grant no. 722176), by the Indo-French Centre for the Promotion of Advanced Research (IFCPAR/CEFIPRA project no. 6008-1) for MW/PDMS membrane processing and characterization. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

Nowadays nanofluidic devices have a great potential in biosensing and DNA sequencing applications. This work is aimed at development of the technique for fabrication of arrays of nanochannels in silicon-glass chips by focused ion beam milling. The use of lithography with charged particles (electrons and ions) paves the way for the fabrication of micro- and nanochannels and pores as well as functional nanostructures of a more complex shape in nanofluidic devices. In this study, a technique for fabrication of microfluidic chips with a system of nanochannels connecting two independent volumes (2 half cells) was developed. It was shown experimentally that the focused ion beam etching time has an influence on both the width of the created nanochannels and their depth. We suggested using anodic bonding of a silicon wafer with the net of micro- and nanochannels with a glass plate for encapsulation of such devices that provide their long lifetime of microfluidic devices. To determine the functionality of the produced devices we studied the ionic conductivity of the produced nanochannels experimentally and using a theoretical approach. Analyzing the results, we determined the effective diameter of the nanochannels and the surface charge density inside the channel which were 20 nm and 1.5 mC/m $${}^2$$ , respectively. The proposed technique allows to create ensembles of channels with a predefined width and depth. Such systems can find wide application in studies of the transport phenomena of both ions and various molecules in nanofluidic devices.

Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies.

We design and demonstrate dramatic suppression of reflection from MAPbBr3 halide-perovskite metasurfaces. We employ the Kerker effect and engineer both electric and magnetic Mie resonances in each dielectric meta-atom to achieve a broadband performance.

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.

In this article, we present the pick-and-place technique for the manipulation of single nanoparticles on non-conductive substrates using a tungsten tip irradiated by a focused electron beam from a scanning electron microscope. The developed technique allowed us to perform the precise transfer of single BaTiO3 nanoparticles from one substrate to another in order to carry out measurements of elastic light scattering as well as second harmonic generation. Also, we demonstrate a fabricated structure made by finely tuning the position of a BaTiO3 nanoparticle on top of a dielectric nanowaveguide deposited on a glass substrate. The presented technique is based on the electrostatic interaction between the sharp tungsten tip charged by the electron beam and the nanoscale object. A mechanism for nanoparticle transfer to a non-conductive substrate is proposed and the forces involved in the manipulation process are evaluated. The presented technique can be widely utilized for the fabrication of nanoscale structures on optically transparent non-conductive substrates, which presents a wide range of applications for nanophotonics.

Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore's law for photonics but also for reaching toward the spectral ranges of operation of emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient and tunable light sources as well as compatible waveguide networks. For the first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication of micro- and nanolasers. On the other hand, III-V semiconductor nanowires are optimal for guiding of visible light as they exhibit a high refractive index as well as excellent shape and crystalline quality beneficial for strong light confinement and long-range waveguiding. Here, we develop an integrated platform for visible light that comprises gallium phosphide (GaP) nanowires directly embedded into compact CsPbBr

Publisher's version (útgefin grein), Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in these systems is particularly promising for the enhancement of nonlinear optical processes and the development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix the optical BIC in a photonic crystal slab with excitons in the atomically thin semiconductor MoSe2 to form nonlinear exciton-polaritons with a Rabi splitting of 27 meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into the far field toward the BIC wavevector, in combination with effective reduction of the excitonic disorder through motional narrowing, results in small polariton linewidths below 3 meV. Together with a strongly wavevector-dependent Q-factor, this provides for the enhancement and control of polariton–polariton interactions and the resulting nonlinear optical effects, paving the way toward tuneable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics., The authors acknowledge funding from the Ministry of Education and Science of the Russian Federation through Megagrant No. 14.Y26.31.0015. A.I.T. and D.N.K. acknowledge the UK EPSRC grant EP/P026850/1. I.A.S. acknowledges the project “Hybrid polaritonics” of Icelandic Science Foundation. Numerical calculations of the angle-resolved reflectivity maps were funded by RFBR according to the research project № 18-32-00527. Sample fabrication was funded by RFBR, project No 19-32-90269. Time-resolved measurements were partly funded by the Russian Science Foundation (Grant No. 19-72-30003). V.K. acknowledges support from the Government of the Russian Federation through the ITMO Fellowship and Professorship Program. This work was in part carried out using equipment of the SPbU Resource Centers “Nanophotonics” and “Nanotechnology”. We thank M. Zhukov, A. Bukatin, and A. Chezhegov for their assistance with the sample characterization and A. Bogdanov for the helpful discussion.

The influence of hydrogen plasma treatment on electrical and optical properties of the vertical GaN nanowires (NWs)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence (PL) investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. Electron beam induced current (EBIC) measurements demonstrated the absence of the potential barriers between active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration providing improved electrical properties is found to be 10 minutes within taken passivation regimes. It is demonstrated that the longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in details.

In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fabrication method on a base of the photolithography process over an array of microspherical lenses has been studied theoretically and then optimized in order to obtain the nanostructures with controlled morphology. It was found that the positive resist thickness corresponding to the best achievable resolution in the subwavelength region is 250 nm in case of 1.5 μm silica spheres and excitation with 365 nm LED. The silica growth mask for selective epitaxy was fabricated. The ordered array of GaP nanowires was synthesized with MBE. Large scale ordering and selectivity of the growth technique is demonstrated.

Nowadays modern science and technology require development of efficient electromagnetic emitters covering far GHz and THz ranges. Semiconductor elements with negative differential resistance (NDR) such as Gunn diodes based on GaAs and InP are well-established powerful microwave emitters. In this work the Gunn diode structure based on single GaN nanowire with the potential of THz device development was proposed and investigated both theoretically and experimentally. According to the results of the numerical modeling, the Gunn generation can be obtained in the proposed geometry. Dependence of the doping concentration on the NW length necessary for the electrons domain formation was obtained. The nanostructures were grown via molecular beam epitaxy technique. Contacts to single nanowires were fabricated with the combination of e-beam lithography and thermal evaporation. It was shown experimentally that the volt-ampere characteristics of the GaN nanowire structure possess current saturation region. Experimental results correspond well to proposed numerical model.

Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.

The emission characteristics of a source of single photons based on an epitaxial heterostructure with CdSe/ZnSe quantum dots and a cylindrical waveguide with a varying cross section formed in a resist layer by electron-beam lithography are investigated. It is shown that a flux of single photons at a wavelength of 530 nm with an average rate of about 1 MHz and the value g(2)(0) = 0.15 ± 0.03 of the second-order correlation function at zero delay can be generated under optical pumping at 80 K.

The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g2(τ) in a wide spectral range from 630 to 730 nm.

In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

Since Complementary metal–oxide–semiconductor technology is the conventional technology for micro- and optoelectronics, integration of emerging materials, such as halide perovskites, into the process is an important branch of perovskite technologies development. In this regard ITO free device research becomes increasingly important. The Perovskite Light-Emitting electrochemical cells are a promising alternative to conventional Perovskite Light Emitting Diodes. In this work we demonstrate green (λEL = 523 nm) CsPbBr3 Perovskite Light-Emitting electrochemical cells with luminescence intensity of 50 kd/m2 integrated with Si++(111) substrate.

Using of inelastic electron tunnelling is very promising approach to study of subwavelength photons and plasmons sources. Such sources are very important for improving of on-chip data processing. One of the ways for development of efficient and compact optical electrically-driven sources is using of nanoantenna placed into the tunnel junction. In this work, singe optical nanoantenna was investigated under ultra-high vacuum and ambient conditions. Photon maps of nanoantenna excited under scanning tunnel microscope tip was observed and the obtained results was compared with the theoretical predictions of electromagnetic near-field distribution.

The technology of creating patterned flexible electrodes based on single-walled carbon nanotubes and polydimethylsiloxane was demonstrated in this paper. A series of experiments were carried out to study whether the percolation affects the conductivity of patterned SWCNT layers. It was found that in patterns with the linewidth above 1 μm and the cell size above 50 μm the random character of SWCNT networks may be neglected. The impact of bending on the grid conductivity was studied. We observed a very moderate increase of resistance below 5% under the strain up to 4 %, which is comparable with the previous results for continuous SWCNT layers and shows the improvement in comparison with the previous reports on patterned SWCNT layers.

To date, nanoscale dielectric and plasmonic systems with a nonlinear response are of great interest to researchers. This is due to a wide range of their potential applications in nonlinear optical converters and optical communication systems. The fundamental problem of nanoscale frequency converters is the low efficiency of nonlinear optical generation. The reason for this is that the main mechanism for increasing the efficiency of nonlinear signal generation via phase matching is not available at scales smaller than the wavelength. Here, we experimentally investigate the generation of the second optical harmonic in hybrid GaP/Au nanoparticles resonantly enhanced with plasmonic and Mie resonances. Using dark-field spectroscopy, it is shown that nanoantennas support a series of optical resonances in the visible range, the spectral position of which is in good agreement with the numerical simulation. We measured the second harmonic generation spectrum, with sharp resonances which is in accordance with linear scattering. Finally, the dependence of the second harmonic optical signal on the polarization is measured.

Nonlinear harmonic generation in nanostructures is one of the key topics in nanophotonics, as it allows infrared-to-visible light conversion at the nanoscale.his work reports on the efficient third-harmonic generation in a free-standing Si nanowire array encapsulated into a polymer membrane. High nonlinearity of Si material X 31112.45 ≈ 10 –19m2 /V 2 and light coupling with optical resonances in the nanowires yield a strong third-harmonic signal and efficient infrared (1200 — 2000nm) to visible (400 — 666nm) upconversion. The fabricated membranes demonstrate high flexibility and semitransparency, which makes them convenient to use as visualizers.

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3.

In this report, we demonstrate that the use of a GaN seeding layer prepared by droplet epitaxy prior to the growth of epitaxial GaN on Si (111) can lead to the formation of oriented arrays of Y-shaped nanoislands (nanotripods) and nanowires and affects the surface density of the nanostructures. From the transmission electron microscopy studies, it is shown that at least some of the seeding islands have a cubic zinc-blende (ZB) GaN structure, and their {111} facets act as the nucleation centers for further growth of GaN nanorods with a wurtzite (WZ) structure. It is also demonstrated that even if the Ga droplets are deposited on the silicon surface prior to the nitridation, a silicon nitride interlayer between silicon and GaN will be inevitably formed in the further growth process. The density and the position of the seeding centers can be controlled with growth parameter variation during the droplet epitaxy; thus the technique proposed and studied in this report can be used for the preparation of site- and density-controlled arrays of nanostructures.

We report on pseudomorphic MBE growth of CdTe/Zn(Mg)(Se)Te quantum dot (QD) structures on InAs(100) substrates and studies of their structural and optical properties. The QDs were fabricated by using a thermal activation technique comprising deposition of a strained CdTe 2D layer, covering it with amorphous Te, followed by fast thermal desorption of the Te layer, which results in a 2D-3D RHEED pattern transition. The QDs exhibit the surface density as low as ~1010 cm−2. The influence of MBE growth parameters and the structure design on photoluminescence properties of the QDs are discussed. Single QD photoluminescence was observed at T=8 K from the 200-nm-wide mesa-structures made of the CdTe QD structures, and the antibunching effect with g(2)(0)=0.16±0.04 was demonstrated. The peculiarities of MBE growth of ZnTe/MgTe/MgSe short-period superlattices nearly lattice-matched to InAs, which could serve as wide gap barriers for efficient electron and hole confinement in the CdTe/Zn(Mg)(Se)Te QDs, are also described.

Recent trends to employ high-index dielectric particles in nanophotonics are motivated by their reduced dissipative losses and large resonant enhancement of nonlinear effects at the nanoscale. Because silicon is a centrosymmetric material, the studies of nonlinear optical properties of silicon nanoparticles have been targeting primarily the third-harmonic generation effects. Here we demonstrate, both experimentally and theoretically, that resonantly excited nanocrystalline silicon nanoparticles fabricated by an optimized laser printing technique can exhibit strong second-harmonic generation (SHG) effects. We attribute an unexpectedly high yield of the nonlinear conversion to a nanocrystalline structure of nanoparticles supporting the Mie resonances. The demonstrated efficient SHG at green light from a single silicon nanoparticle is 2 orders of magnitude higher than that from unstructured silicon films. This efficiency is significantly higher than that of many plasmonic nanostructures and small silicon nanoparticles in the visible range, and it can be useful for a design of nonlinear nanoantennas and silicon-based integrated light sources.

Various clusters of metallic or dielectric nanoparticles can exhibit sharp Fano resonances originating from at least two modes interference of different spectral width. However, for practical applications such as biosensing or nonlinear nanophotonics, the fine-tuning of the Fano resonances is generally required. Here, we propose and demonstrate a novel type of hybrid oligomers consisting of asymmetric metal-dielectric (Au/Si) nanoparticles with a sharp Fano resonance in the visible range, which has a predominantly magnetic origin. We demonstrate both numerically and experimentally that such hybrid nanoparticle oligomers allow fine-tuning of the Fano resonance via fs-laser-induced melting of Au nanoparticles at the nanometer scale. We show that the Fano resonance wavelength can be changed by fs-laser reshaping very precisely (within 15 nm) being accompanied by a reconfiguration of its profile.

Microdisk lasers demonstrate high performance and low threshold characteristics due to supporting of whispering gallery modes with a high quality factor. One of the challenging problems impeding some practical applications of whispering gallery mode lasers is that they have isotropic emission predominantly lying in the plane of the cavity. In this work, we present a novel method that provides both enhancement of the laser emission and modifies its directivity, making the vertical direction favorable. Electromagnetic energy outcouples from the cavity through the platinum–carbon plasmonic wire nanoantenna grown by electron-beam assisted deposition right up the side wall of the cavity. Evanescent field of whispering gallery mode excites surface plasmon polariton which propagates along the nanoantenna and scatters at its tip. We demonstrate 20× enhancement of the dominant mode intensity with 24 dB of side mode suppression increment without essential worsening of the Q-factor which remains over 3 × 104. The pr...

It has been demonstrated experimentally that the local irradiation of a thin gold film on glass with electrons with an energy of 5 keV led to an increase in the thickness of the irradiated area. When the film was subjected to local irradiation with electrons with an energy of 25 keV, the irradiated region became thinner and a gold ring was formed along the perimeter of this region. At high densities of the electron current, thickened regions of the film assumed the shape of fractal nanostructures. The observed effects were induced by the formation of a negative charge region on the surface of glass (or in the bulk of it) and the migration of positive gold ions into this region.

8mJ pulse energy is achieved in the thin-rod Yb:YAG laser amplifier at 1.5kHz repetition rate that is more than 3 times surpasses the previous record. Using thin tapered rods for further energy scaling is proposed.

Engineering of nonlinear optical response in nanostructures is one of the key topics in nanophotonics, as it allows for broad frequency conversion at the nanoscale. Nevertheless, the application of the developed designs is limited by either high cost of their manufacturing or low conversion efficiencies. This paper reports on the efficient second-harmonic generation in a free-standing GaP nanowire array encapsulated in a polymer membrane. Light coupling with optical resonances and field confinement in the nanowires together with high nonlinearity of GaP material yield a strong second-harmonic signal and efficient near-infrared (800-1200 nm) to visible upconversion. The fabricated nanowire-based membranes demonstrate high flexibility and semitransparency for the incident infrared radiation, allowing utilizing them for infrared imaging, which can be easily integrated into different optical schemes without disturbing the visualized beam., ACS Nano, 14 (8), ISSN:1936-0851, ISSN:1936-086X

The technique of pick up and transfer of nanoscaled particles from the surface of a non-conductive substrate using a tungsten tip irradiated with focused electron beam is experimentally presented. The proposed technique of manipulation is implemented in a scanning electron microscope and allows to manipulate nanoparticles, with continuous visualization of the transfer process in real-time. The mechanism of the manipulation process is presented, which is based on the electrostatic interaction of charges produced by an electron beam in the tip, particle and substrate.

This work is devoted to the study of plasmonic properties of electrically driven gold nanodisks employing scanning tunnel microscopy induced luminescence (STML). Gold disks were fabricated with the use of e-beam lithography. The size of the disks (diameter of 120-180 nm and height of 60 nm) was comparable with the wavelength emitted. To confirm that the observed emission of photons is associated with inelastic tunneling of electrons, but not with the collision of the probe with the nanodisk surface, the nanodisk was STML scanned at different angles of the probe motion (0, 90, 270 degrees). In all cases the obtained images were identical. It was shown that nanodisk provided nonuniform STML map, the edges of the nanodisk emitted light with higher intensity compared to the center. Also, current-voltage I(V) characteristics at different points of a nanodisk were obtained and analyzed, and the acquired features at I(V) curves were correlated to the STML results. The proposed approach based on I(V) curves analyzing is very promising for the indirect study of optical properties of the electrically driven nanoscale photon sources.

This work is devoted to fabrication of a highly transparent and conductive SWCNT electrode by combination of lithography and oxygen plasma treatment and characterization of this electrode. The resistance of the textured electrode was 206 Ohm/sq, which is 9.25% lower than resistance of the electrode made from a continuous layer of SWCNT with the same transparency of 95%. The demonstrated technology for the fabrication of textured SWCNT electrodes can be applied to a wide range of optoelectronic devices, including flexible thin-film solar cells or displays.

We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g(2)(0) ~ 0.17 that is a clear evidence of non-classical light.

The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaO x buffer layers, monolayer thick Ga wetting layer and GaN seeding layer prepared by the droplet epitaxy is performed. It is demonstrated that the homogeneity and the morphology of the NW arrays drastically depend on the chosen buffer layer and surface preparation technique. An effect of the buffer and seeding layers on the nucleation and desorption is also discussed. The lowest NWs surface density of 14 μm-2 is obtained on AlN buffer layer and the highest density exceeding the latter value by more than an order of magnitude corresponds to the growth on the 0.3 ML thick Ga wetting layer. It is shown, that the highest NWs mean elongation rate is obtained with AlN buffer layer, while the lowest elongation rate corresponds to the bare Si (111) surface and it is twice as lower as the first case. It is found, that use of AlN buffer layer corresponds to the most homogeneous NWs array with the smallest length dispersion while the least homogeneous array corresponds to the bare Si substrate. Vertically aligned GaN NWs array on the wide bandgap GaO x semiconductor buffer layer grown by plasma-enhanced chemical vapor deposition demonstrates its potential for electronic applications. Photoluminescence (PL) study of the synthesized samples is characterized by an intense optical response related to the excitons bound to neutral donors. The highest PL intensity is obtained in the sample with AlN buffer layer.