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4 results on '"Dunne, Greg"'

1. Trap and inversion layer mobility characterization using Hall Effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidation

Author

Tilak, Vinayak, Matocha, Kevin, Dunne, Greg, Allerstam, Fredrik, and Sveinbjornsson, Einar O.

Subjects
Electrostatic interactions -- Analysis, Hall effect -- Measurement, Metal oxide semiconductor field effect transistors -- Evaluation, Silicon carbide -- Electric properties, Sodium -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

Low-temperature MOS-gated Hall measurements and gated diode capacitance-voltage (C-V) measurements are used for characterizing both trap density and Hall mobility on 4H-silicon carbide MOSFETs with gate oxides grown by sodium enhanced oxidation (SEO) and thermally grown in [N.sub.2]O. The temperature-dependent Hall mobility measurements have revealed that inversion layer mobility in both the SEO and baseline samples are limited by Coulomb scattering from interface trapped charge and surface roughness.

Published
2009

2. Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs

Author

Matocha, Kevin, Dunne, Greg, Soloviev, Stanislav, and Beaupre, Richard

Subjects
Breakdown (Electricity) -- Evaluation, Metal oxide semiconductor field effect transistors -- Evaluation, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

Time-dependent dielectric measurements are used for characterizing the gate oxide reliability of SiC MOS capacitors and vertical DMOSFETs at 200 degree centigrade. The impact of material quality on the oxide breakdown is understood by comparing SiC material defects with the oxide breakdown locations.

Published
2008

3. DC and transient performance of 4H-SiC double-implant MOSFETs

Author

Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, and Stevanovic, Ljubisa

Subjects
Diodes -- Evaluation, Voltage -- Evaluation, Metal oxide semiconductor field effect transistors -- Design and construction, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

SiC vertical MOSFETs are fabricated and characterized with blocking voltages of about 1 kV and a specific on-resistance as low as 8.3 m[omega].[cm.sup.2]. The internal body diode's reverse recovery characteristics have shown injection-limited conduction, which are attributed to the implanted P-anode layers.

Published
2008

4. Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers

Author

Tilak, Vinayak, Matocha, Kevin, and Dunne, Greg

Subjects
Hall effect -- Analysis, Metal oxide semiconductor field effect transistors -- Design and construction, Silicon carbide -- Mechanical properties, Silicon carbide -- Electric properties, Electrons -- Scattering, Electrons -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The main scattering mechanisms limiting mobility in SiC MOSFETs were examined with the help of Hall-effect mechanisms of n-channel MOS devices. Findings reveal that surface-roughness scattering and Coulomb scattering were the main scattering mechanisms limiting electron mobility found in SiC MOSFETs at room temperature.

Published
2007

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